Abstract:
A magnetoresistance assembly can include a substrate and a first GMR element disposed over the substrate, the first GMR element having a bottom surface and top surface. The magnetoresistance assembly can further include a first TMR element disposed over the substrate, the first TMR element having a top surface and a bottom surface, wherein a line perpendicular to and intersecting the top or bottom surface of the first TMR element intersects the first GMR element. The first GMR element and the first TMR element are in electrical communication.
Abstract:
A magnetic field sensor includes at least one coil responsive to an AC coil drive signal; at least one magnetic field sensing element responsive to a sensing element drive signal and configured to detect a directly coupled magnetic field generated by the at least one coil and to generate a magnetic field signal in response to the directly coupled magnetic field; a processor responsive to the magnetic field signal to compute a sensitivity value associated with detection of the directly coupled magnetic field and substantially independent of a reflected magnetic field reflected by a conductive target disposed proximate to the at least one magnetic field sensing element; and an output signal generator configured to generate an output signal of the magnetic field sensor indicative of the reflected magnetic field.
Abstract:
A spin valve magnetoresistance element has an even number of free layer structures for which half has an antiferromagnetic coupling and the other half has a ferromagnetic coupling with respect to associated pinned layers. The different couplings are the result of an even number different spacer layers having respective different thicknesses.
Abstract:
A spin valve magnetoresistance element has an even number of free layer structures for which half has an antiferromagnetic coupling and the other half has a ferromagnetic coupling with respect to associated pinned layers. The different couplings are the result of an even number different spacer layers having respective different thicknesses.
Abstract:
A magnetic field sensor includes at least one coil responsive to an AC coil drive signal; at least two spaced apart magnetic field sensing elements responsive to a sensing element drive signal and positioned proximate to the at least one coil; and a circuit coupled to the at least two magnetic field sensing elements to generate an output signal of the magnetic field sensor indicative of a difference between a distance of a conductive target with respect to each of the at least two spaced apart magnetic field sensing elements.
Abstract:
Apparatus includes a first portion of conductive material having varying response to a generated magnetic field along a length of the conductive material, wherein the first portion of conductive material produces a varying eddy current and a varying reflected magnetic field, in response to the generated magnetic field. The apparatus further includes one or more reference portions of conductive material having a relatively invariable response to the generated magnetic field, wherein the reference portion of conductive material produces a relatively invariable eddy current and a relatively invariable reflected magnetic field in response to the generated magnetic field.
Abstract:
In one aspect, a magnetic field angle sensor includes a bridge structure that include a sine bridge configured to generate a sinusoidal signal indicative of a magnetic field along a first axis and a cosine bridge configured to generate a cosinusoidal signal indicative of the magnetic field along a second axis that is orthogonal with respect to the first axis. One of the sine bridge or the cosine bridge includes a first set of at least two magnetoresistance elements, a second set of at least one magnetoresistance element, a third set of at least one magnetoresistance element and a fourth set of at least one magnetoresistance element. An average reference direction of the first set of at least two magnetoresistance elements is equal to an average reference direction of the third set of at least one magnetoresistance element. An average reference direction of the second set of at least one magnetoresistance element is equal to an average direction angle of the fourth set of at least one magnetoresistance element.
Abstract:
A magnetic field sensor includes at least one coil responsive to an AC coil drive signal; at least two spaced apart magnetic field sensing elements responsive to a sensing element drive signal and positioned proximate to the at least one coil; and a circuit coupled to the at least two magnetic field sensing elements to generate an output signal of the magnetic field sensor indicative of a difference between a distance of a conductive target with respect to each of the at least two spaced apart magnetic field sensing elements.
Abstract:
An apparatus comprises a conductive material having varying thickness along its length, the varying thickness providing varying response along a length of the conductive material to a magnetic field having a non-zero frequency; wherein the magnetic field produces an eddy current in the conductive material which generates a reflected magnetic field, wherein the varying response causes the reflected magnetic field to vary in strength along the length of the conductive material. The apparatus may include one or more reference portions of conductive material.
Abstract:
A magnetoresistance element has a pinning arrangement with two antiferromagnetic pinning layers, two pinned layers, and a free layer. A spacer layer between one of the two antiferromagnetic pinning layers and the free layer has a material selected to allow a controllable partial pinning by the one of the two antiferromagnetic pinning layers.