公开(公告)号：US20090285993A1

公开(公告)日：2009-11-19

申请号：US12309188

申请日：2007-07-06

Applicant: Joon-Koo Kang ,  Mi-Young Han ,  Young-Eun Lee ,  Young-Jun Hong ,  Yeong-Rae Chang

Inventor： Joon-Koo Kang ,  Mi-Young Han ,  Young-Eun Lee ,  Young-Jun Hong ,  Yeong-Rae Chang

IPC: B05D3/02 ,  C09D5/00

CPC classification number: G02B1/111 ,  C08G77/24 ,  C08L83/08 ,  C09D183/08

Abstract: An antireflective coating composition includes a hydrolytic condensate (C1) of alkoxy silane (C11) and fluoric alkoxy silane (C12); a particle-type metal fluoride (C2) with a refractive index of 1.40 or less; and a liquid dispersion-enhancing chelating agent (C3). A coating film to which the above composition is applied controls refractive index, surface energy, film strength and so on, so it ensures excellent antireflective characteristic, excellent scratch resistance, good erasure of liquid stains such as fingerprints, and particularly excellent dust removal, so it may be usefully applied to an outermost layer of a front surface of a display regardless of kind of a display substrate or presence of an additional coating layer.

Abstract translation: 抗反射涂料组合物包括烷氧基硅烷（C11）和氟烷氧基硅烷（C12）的水解缩合物（C1）; 折射率为1.40以下的粒子型金属氟化物（C2） 和液体分散增强螯合剂（C3）。 上述组合物所用的涂膜控制折射率，表面能，膜强度等，从而确保优异的抗反射特性，优异的耐擦伤性，良好的擦痕等痕迹，特别优异的除尘等。 无论显示基板的种类或附加涂层的存在如何，可以有效地将其应用于显示器的前表面的最外层。

公开(公告)号：USD575299S1

公开(公告)日：2008-08-19

申请号：US29274287

申请日：2007-04-11

Applicant: Young Eun Lee

Designer： Young Eun Lee

公开(公告)号：US07393700B2

公开(公告)日：2008-07-01

申请号：US11208490

申请日：2005-08-22

Applicant: Sun-Ghil Lee ,  Yu-Gyun Shin ,  Jong-Wook Lee ,  Deok-Hyung Lee ,  In-Soo Jung ,  Young-Eun Lee

Inventor： Sun-Ghil Lee ,  Yu-Gyun Shin ,  Jong-Wook Lee ,  Deok-Hyung Lee ,  In-Soo Jung ,  Young-Eun Lee

IPC: H01L21/302

CPC classification number: H01L29/66636 ,  H01L21/3065 ,  H01L21/32135 ,  H01L29/165 ,  H01L29/66628

Abstract: Methods of etching a semiconductor substrate may include providing a first gas that is chemically reactive with respect to the semiconductor substrate, and while providing the first gas, providing a second gas different than the first gas. More particularly, a molecule of the second gas may include a hydrogen atom, and the second gas may lower a temperature at which the first gas chemically reacts with the semiconductor substrate. The mixture of the first and second gases may be provided adjacent the semiconductor substrate to etch the semiconductor substrate.

Abstract translation: 蚀刻半导体衬底的方法可以包括提供相对于半导体衬底具有化学反应性的第一气体，并且在提供第一气体的同时，提供不同于第一气体的第二气体。 更具体地，第二气体的分子可以包括氢原子，第二气体可以降低第一气体与半导体衬底发生化学反应的温度。 第一和第二气体的混合物可以设置在邻近半导体衬底处以蚀刻半导体衬底。

公开(公告)号：US20060283380A1

公开(公告)日：2006-12-21

申请号：US11398118

申请日：2006-04-05

Applicant: Sun-Ghil Lee ,  Young-Pil Kim ,  Yu-Gyun Shin ,  Jong-Wook Lee ,  Young-Eun Lee

Inventor： Sun-Ghil Lee ,  Young-Pil Kim ,  Yu-Gyun Shin ,  Jong-Wook Lee ,  Young-Eun Lee

IPC: C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC classification number: C30B29/06 ,  C30B15/00

Abstract: A semiconductor device formed on a strained silicon layer and a method of manufacturing such a semiconductor device are disclosed. In accordance with this invention, a first silicon germanium layer is formed on a single crystalline silicon substrate; a second silicon germanium layer is formed on the first silicon germanium layer, the second silicon germanium layer having a concentration of germanium in a range of about 1 percent by weight to about 15 percent by weight based on the total weight of the second silicon germanium layer; a strained silicon layer is formed on the second silicon germanium layer; an isolation layer is formed at a first portion of the strained silicon layer; a gate structure is formed on the strained silicon layer; and, source/drain regions are formed at second portions of the strained silicon layer adjacent to the gate structure to form a transistor.

Abstract translation: 公开了一种形成在应变硅层上的半导体器件及其制造方法。 根据本发明，在单晶硅衬底上形成第一硅锗层; 第二硅锗层形成在第一硅锗层上，第二硅锗层的锗浓度在约1重量％至约15重量％的范围内，基于第二硅锗层的总重量 ; 在第二硅锗层上形成应变硅层; 在应变硅层的第一部分处形成隔离层; 在应变硅层上形成栅极结构; 并且源极/漏极区域形成在与栅极结构相邻的应变硅层的第二部分处以形成晶体管。

公开(公告)号：US20060057821A1

公开(公告)日：2006-03-16

申请号：US11208490

申请日：2005-08-22

Applicant: Sun-Ghil Lee ,  Yu-Gyun Shin ,  Jong-Wook Lee ,  Deok-Hyung Lee ,  In-Soo Jung ,  Young-Eun Lee

Inventor： Sun-Ghil Lee ,  Yu-Gyun Shin ,  Jong-Wook Lee ,  Deok-Hyung Lee ,  In-Soo Jung ,  Young-Eun Lee

IPC: H01L21/30

CPC classification number: H01L29/66636 ,  H01L21/3065 ,  H01L21/32135 ,  H01L29/165 ,  H01L29/66628

Abstract: Methods of etching a semiconductor substrate may include providing a first gas that is chemically reactive with respect to the semiconductor substrate, and while providing the first gas, providing a second gas different than the first gas. More particularly, a molecule of the second gas may include a hydrogen atom, and the second gas may lower a temperature at which the first gas chemically reacts with the semiconductor substrate. The mixture of the first and second gases may be provided adjacent the semiconductor substrate to etch the semiconductor substrate.

Abstract translation: 蚀刻半导体衬底的方法可以包括提供相对于半导体衬底具有化学反应性的第一气体，并且在提供第一气体的同时，提供不同于第一气体的第二气体。 更具体地，第二气体的分子可以包括氢原子，第二气体可以降低第一气体与半导体衬底发生化学反应的温度。 第一和第二气体的混合物可以设置在邻近半导体衬底处以蚀刻半导体衬底。

公开(公告)号：US20050248035A1

公开(公告)日：2005-11-10

申请号：US11092524

申请日：2005-03-29

Applicant: Yong-Hoon Son ,  Yu-Gyun Shin ,  Jong-Wook Lee ,  Sun-Ghil Lee ,  In-Soo Jung ,  Young-Eun Lee ,  Deok-Hyung Lee

Inventor： Yong-Hoon Son ,  Yu-Gyun Shin ,  Jong-Wook Lee ,  Sun-Ghil Lee ,  In-Soo Jung ,  Young-Eun Lee ,  Deok-Hyung Lee

IPC: H01L21/28 ,  H01L21/8234 ,  H01L23/48 ,  H01L23/52 ,  H01L27/06 ,  H01L29/40

CPC classification number: H01L29/7842 ,  H01L21/823425 ,  H01L21/823475 ,  H01L27/0688

Abstract: A semiconductor device includes an inorganic insulating layer on a semiconductor substrate, a contact plug that extends through the inorganic insulating layer to contact the semiconductor substrate and a stress buffer spacer disposed between the node contact plug and the inorganic insulating layer. The device further includes a thin-film transistor (TFT) disposed on the inorganic insulating layer and having a source/drain region extending along the inorganic insulating layer to contact the contact plug. The device may further include an etch stop layer interposed between the inorganic insulating layer and the semiconductor substrate.

Abstract translation: 半导体器件包括半导体衬底上的无机绝缘层，延伸穿过无机绝缘层以接触半导体衬底的接触插塞和设置在节点接触插塞和无机绝缘层之间的应力缓冲间隔件。 该器件还包括设置在无机绝缘层上并具有沿着无机绝缘层延伸以接触接触插塞的源极/漏极区域的薄膜晶体管（TFT）。 该器件还可以包括插入无机绝缘层和半导体衬底之间的蚀刻停止层。

公开(公告)号：US08213086B2

公开(公告)日：2012-07-03

申请号：US12448589

申请日：2007-12-28

Applicant: Yeong-Rae Chang ,  Young-Jun Hong ,  Young-Eun Lee ,  Tae-Su Kim ,  Hyun-Woo Shin ,  Bu-Gon Shin

Inventor： Yeong-Rae Chang ,  Young-Jun Hong ,  Young-Eun Lee ,  Tae-Su Kim ,  Hyun-Woo Shin ,  Bu-Gon Shin

IPC: G02B1/10

CPC classification number: G02B1/111

Abstract: A coating composition for antireflection that includes a low refraction-thermosetting resin having a refractive index of 1.2 to 1.45, a high refraction-ultraviolet curable resin having a refractive index of 1.46 to 2, and an ultraviolet absorber; an antireflection film manufactured using the coating composition; and a method of manufacturing the antireflection film. The antireflection film has excellent abrasion resistance and antireflection characteristic. Further, since the antireflection film can be manufactured in one coating process, it is possible to reduce manufacturing cost.

Abstract translation: 一种抗反射用涂料组合物，其包含折射率为1.2〜1.45的低折射率热固性树脂，折射率为1.46〜2的高折射紫外线固化性树脂和紫外线吸收剂; 使用该涂料组合物制造的防反射膜; 以及制造防反射膜的方法。 抗反射膜具有优异的耐磨性和抗反射特性。 此外，由于可以在一个涂布工艺中制造抗反射膜，所以可以降低制造成本。

公开(公告)号：US08179499B2

公开(公告)日：2012-05-15

申请号：US12005628

申请日：2007-12-28

Applicant: Young-Eun Lee

Inventor： Young-Eun Lee

IPC: G02F1/1335

CPC classification number: G02F1/133604 ,  G02F1/133603

Abstract: A liquid crystal display device capable of reducing a time delay in lighting of the liquid crystal display device includes a liquid crystal panel, at least one fluorescent lamps disposed below the liquid crystal panel, formed as a cylindrical shape having a central axis and supplying light to the liquid crystal panel, and at least one auxiliary optical source disposed to face the liquid crystal panel while having the central axis therebetween and supplying light to the fluorescent lamps.

Abstract translation: 能够减少液晶显示装置的点亮时间延迟的液晶显示装置包括液晶面板，设置在液晶面板的下方的至少一个荧光灯，形成为具有中心轴的圆筒状，并向 液晶面板，以及至少一个辅助光源，其设置成面对液晶面板同时具有中心轴并向荧光灯提供光。

公开(公告)号：US08110249B2

公开(公告)日：2012-02-07

申请号：US12309181

申请日：2007-07-06

Applicant: Joon-Koo Kang ,  Mi-Young Han ,  Young-Eun Lee ,  Young-Jun Hong ,  Yeong-Rae Chang

Inventor： Joon-Koo Kang ,  Mi-Young Han ,  Young-Eun Lee ,  Young-Jun Hong ,  Yeong-Rae Chang

IPC: C09D133/08 ,  C09D133/16 ,  C09D127/12 ,  C08L27/12 ,  G02B1/10 ,  G02B1/11

CPC classification number: C09D133/08 ,  C09D4/00 ,  C09D133/16

Abstract: An antireflective coating composition includes a photopolymerizable acrylate monomer (C1); a particle-type metal fluoride (C2) with a refractive index of 1.40 or less; a photopolymerization initiator (C3); and at least one liquid dispersion-enhancing chelating agent (C4) selected from the group consisting of Mg(CF3COO)2, Na(CF3COO), K(CF3COO), Ca(CF3COO)2, Mg(CF2COCHCOCF3)2 and Na(CF2COCHCOCF3). This composition ensures good mechanical strength, excellent adhesion to a substrate, short curing time by UV curing, prevention of dust attachment, good erasure of stain, good dust removal and good scratch resistance, so it is usefully for making an antireflective coating film of a display.

Abstract translation: 抗反射涂料组合物包括可光聚合的丙烯酸酯单体（C1）; 折射率为1.40以下的粒子型金属氟化物（C2） 光聚合引发剂（C3）; 以及选自Mg（CF 3 COO）2，Na（CF 3 COO），K（CF 3 COO），Ca（CF 3 COO）2，Mg（CF 2 COCHCOCF 3）2和Na（CF 2 COCHCOCF 3））中的至少一种液体分散增强螯合剂（C4） ）。 该组合物确保良好的机械强度，对基材的优异粘附性，通过UV固化的短固化时间，防尘附着，良好的污渍清除，良好的除尘性和良好的耐划伤性，因此有助于制备抗反射涂膜 显示。

公开(公告)号：US20090239348A1

公开(公告)日：2009-09-24

申请号：US12478345

申请日：2009-06-04

Applicant: Sun-Ghil Lee ,  Young-Pil Kim ,  Yu-Gyun Shin ,  Jong-Wook Lee ,  Young-Eun Lee

Inventor： Sun-Ghil Lee ,  Young-Pil Kim ,  Yu-Gyun Shin ,  Jong-Wook Lee ,  Young-Eun Lee

IPC: H01L21/336

CPC classification number: C30B29/06 ,  C30B15/00

Abstract: A semiconductor device formed on a strained silicon layer and a method of manufacturing such a semiconductor device are disclosed. In accordance with this invention, a first silicon germanium layer is formed on a single crystalline silicon substrate; a second silicon germanium layer is formed on the first silicon germanium layer, the second silicon germanium layer having a concentration of germanium in a range of about 1 percent by weight to about 15 percent by weight based on the total weight of the second silicon germanium layer; a strained silicon layer is formed on the second silicon germanium layer; an isolation layer is formed at a first portion of the strained silicon layer; a gate structure is formed on the strained silicon layer; and, source/drain regions are formed at second portions of the strained silicon layer adjacent to the gate structure to form a transistor.

Abstract translation: 公开了一种形成在应变硅层上的半导体器件及其制造方法。 根据本发明，在单晶硅衬底上形成第一硅锗层; 第二硅锗层形成在第一硅锗层上，第二硅锗层的锗浓度在约1重量％至约15重量％的范围内，基于第二硅锗层的总重量 ; 在第二硅锗层上形成应变硅层; 在应变硅层的第一部分处形成隔离层; 在应变硅层上形成栅极结构; 并且源极/漏极区域形成在与栅极结构相邻的应变硅层的第二部分处以形成晶体管。