Abstract:
A pixel circuit includes: an OLED; a second transistor including gate, first, and second terminals coupled to a first scan line, a data line, and a first node, respectively; a fourth transistor including gate, first, and second terminals coupled to a third scan line, the first node, and a second node, respectively; a third transistor including gate, first, and second terminals coupled to a second scan line, a reference power source, and the second node, respectively; a fifth transistor including gate, first, and second terminals coupled to a light emission control line, a third node, and an anode of the OLED, respectively; a first capacitor coupled between the first and second nodes; a second capacitor coupled between the second and third nodes; and a first transistor including gate, first, and second terminals coupled to the first node, a first power source, and the third node, respectively.
Abstract:
Pixel circuits and an organic electroluminescent display including the same are provided. The pixel circuit includes: an organic light emitting diode; a fifth transistor coupled to a third scan line, a reference power source, and a first node; a first capacitor coupled between the first node and a second node; a second capacitor coupled between the first node and the organic light emitting diode; a fourth transistor coupled to a second scan line, a data line, and the first node; a sixth transistor coupled to a first scan line, a first power source, and the second node; a second transistor coupled to the second scan line, the second node, and a third node; a third transistor coupled to an emission control line, the first power source, and the third node; and a first transistor coupled to the second node, the third node, and the organic light emitting diode.
Abstract:
A write strategy method, medium, and apparatus. The method includes writing a signal to a storage medium by using a predetermined power and an initial write strategy, calculating variation characteristics of a data signal which separately correspond to variations of write strategy parameters, if the written signal does not satisfy initial quality standards, and calculating correlations among periods of the data signal and correlations among the write strategy parameters by using the variation characteristics of the data signal, and determining the write strategy parameters based on the correlations among the periods of the data signal and the correlations among the write strategy parameters.
Abstract:
A pixel circuit of a display panel, a method of driving the pixel circuit, and an organic light emitting display device including the display panel are provided. All of a plurality of transistors used in the pixel circuit are NMOS transistors, and the pixel circuit is configured to compensate for a voltage change at a source electrode of a driving transistor during light emission.
Abstract:
The cosmetics container of the present invention is provided with a casing, pivoting trays and a housing tray that are pivoted into and out of the casing. The casing consists of a top plate and a bottom plate of frame shape, and a side plate arranged vertically between the top plate and bottom plate, and part of the side plate is open. Plural pivoting trays are arranged in a stack between the top plate and bottom plate, and they are drawn in or out through the opening of the casing. At least one of the pivoting trays is a housing tray, in which a housing space is formed for make-up tools. Therefore, the present invention may house cosmetics together with make-up tools, so the portability of cosmetics and make-up tools is improved.
Abstract:
Provided is a scan driver that supplies a scan signal to an organic light emitting display device (OLED). The scan driver includes transistors of the same conductivity type. To generate individual scan signals, the scan driver includes samplers, each of which samples an input signal in synchronization with a clock signal or an inverted clock signal; and an OR gate and a NAND gate, each of which performs a logical operation on output signals of adjacent samplers and generates a scan signal. The samplers, the OR gate and the NOR gate include transistors of the same conductivity type.
Abstract:
A memory device comprising an optimization component that facilitates erasing memory cells in a substantially homogeneous electromagnetic field and methods that facilitate erasing memory cells in a substantially homogeneous electromagnetic field are presented. The optimization component facilitates selecting a subset of memory cells to be erased at the same time, such that a memory cell in the subset of memory cells has two neighbor memory cells adjacent thereto that are in the subset of memory, or one neighbor memory cell adjacent thereto when the memory cell is an end-row memory cell. The optimization component facilitates performing a Fowler-Nordheim channel erase to erase the subset of memory cells, and a predetermined voltage potential associated with an erase command is applied to each cell of the subset of memory cells to facilitate reducing fringing effect associated with the electromagnetic fields applied to the cells during the erase.
Abstract:
Systems and methods that facilitate improved programming memory cells in a nonvolatile memory (e.g., flash memory) are presented. An optimized voltage component can facilitate supplying respective voltages to a source, drain, and gate associated with a memory cell during operations, such as programming operations. The optimized voltage component can facilitate supplying a predetermined source bitline voltage to a memory cell during programming of the cell to facilitate reducing leakage currents associated with the bitlines, which can improve programming of the memory cell, and to facilitate reducing the programming current, which can result in power efficient programming and improved programming speed.
Abstract:
Systems, methods, and devices that facilitate applying a predefined negative gate voltage to wordlines adjacent to a selected wordline associated with a memory cell selected during a read or verify operation to facilitate reducing adjacent wordline disturb are presented. A memory component can comprise an optimized operation component that can apply a predefined negative gate voltage to wordlines adjacent to a selected wordline associated with a memory cell selected for a read or verify operation, based at least in part on predefined operation criteria, to facilitate reducing adjacent wordline disturb in the selected memory cell to facilitate reducing a shift in the voltage threshold and maintain a desired operation window. The optimized operation component optionally can include an evaluator component that can facilitate determining whether a negative gate voltage applied to adjacent wordlines is to be adjusted to facilitate reducing adjacent wordline disturb below a predetermined threshold amount.
Abstract:
A system and methodology that can minimize disturbance during an AC operation associated with a memory, such as, program, read and/or erase, is provided. The system pre-charges all or a desired subset of the bit lines in a memory array to a specified voltage, during an AC operation to facilitate reducing AC disturbances between neighboring cells. A pre-charge voltage can be applied to all bit lines in a block in the memory array, or to bit lines associated with a selected memory cell and neighbor memory cells adjacent to the selected memory cell in the block. The system ensures that source and drain voltage levels can be set to desired levels at the same or substantially the same time, while selecting a memory cell. This can facilitate minimizing AC disturbances in the selected memory cell during the AC operation.