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公开(公告)号：US07391941B2
公开(公告)日：2008-06-24
申请号：US10448760
申请日：2003-05-30
Applicant: Xianmin Yi
Inventor： Xianmin Yi
CPC classification number: G02B6/12014
Abstract: An arrayed waveguide grating with improved edge channel aberration may be achieved by tuning the arrayed waveguide grating to have a stigmatic point for the input and output waveguides that is not at the center of the Rowland circle. In this way, crosstalk, ripples, and transmission spectrum uniformity may be improved in some embodiments of the present invention.
Abstract translation: 具有改善的边缘通道像差的阵列波导光栅可以通过调谐阵列波导光栅来实现，以具有不在罗兰圆的中心的输入和输出波导的点状点。 以这种方式，在本发明的一些实施例中，可以改善串扰，波纹和透射光谱均匀性。
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2.发明授权Applying negative gate voltage to wordlines adjacent to wordline associated with read or verify to reduce adjacent wordline disturb 有权将负栅极电压施加到与读取或验证相关的字线附近的字线，以减少相邻的字线干扰公开(公告)号：US07995386B2
公开(公告)日：2011-08-09
申请号：US12275663
申请日：2008-11-21
Applicant: Yuji Mizuguchi , Mark W. Randolph , Darlene Gay Hamilton , Yi He , Zhizheng Liu , Yanxia (Emma) Lin , Xianmin Yi , Gulzar Kathawala , Amol Ramesh Joshi , Kuo-Tung Chang , Edward Franklin Runnion , Sung-Chul Lee , Sung-Yong Chung , Yanxiang Liu , Yu Sun
Inventor： Yuji Mizuguchi , Mark W. Randolph , Darlene Gay Hamilton , Yi He , Zhizheng Liu , Yanxia (Emma) Lin , Xianmin Yi , Gulzar Kathawala , Amol Ramesh Joshi , Kuo-Tung Chang , Edward Franklin Runnion , Sung-Chul Lee , Sung-Yong Chung , Yanxiang Liu , Yu Sun
IPC: G11C16/04
CPC classification number: G11C16/26 , G11C16/08 , G11C16/3427
Abstract: Systems, methods, and devices that facilitate applying a predefined negative gate voltage to wordlines adjacent to a selected wordline associated with a memory cell selected during a read or verify operation to facilitate reducing adjacent wordline disturb are presented. A memory component can comprise an optimized operation component that can apply a predefined negative gate voltage to wordlines adjacent to a selected wordline associated with a memory cell selected for a read or verify operation, based at least in part on predefined operation criteria, to facilitate reducing adjacent wordline disturb in the selected memory cell to facilitate reducing a shift in the voltage threshold and maintain a desired operation window. The optimized operation component optionally can include an evaluator component that can facilitate determining whether a negative gate voltage applied to adjacent wordlines is to be adjusted to facilitate reducing adjacent wordline disturb below a predetermined threshold amount.
Abstract translation: 提出了有助于将预定义的负栅极电压施加到与在读取或验证操作期间选择的存储器单元相关联的所选字线相邻的字线的系统，方法和设备，以便于减少相邻字线干扰。 存储器组件可以包括优化的操作部件，其可以至少部分地基于预定义的操作标准，将预定义的负栅极电压施加到与被选择用于读取或验证操作所选择的存储器单元相关联的所选字线相邻的字线上，以便减少 所选择的存储单元中的相邻字线干扰，以便减少电压阈值的移位并保持期望的操作窗口。 优化的操作组件可选地可以包括评估器组件，其可以便于确定施加到相邻字线的负栅极电压是否被调整以便于将相邻字线干扰降低到低于预定阈值量。
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3.发明申请APPLYING NEGATIVE GATE VOLTAGE TO WORDLINES ADJACENT TO WORDLINE ASSOCIATED WITH READ OR VERIFY TO REDUCE ADJACENT WORDLINE DISTURB 有权应用负极门电压到相关的字词相关联的阅读或验证，以减少相似词干扰公开(公告)号：US20100128521A1
公开(公告)日：2010-05-27
申请号：US12275663
申请日：2008-11-21
Applicant: Yuji Mizuguchi , Mark W. Randolph , Darlene Gay Hamilton , Yi He , Zhizheng Liu , Yanxia (Emma) Lin , Xianmin Yi , Gulzar Kathawala , Amol Ramesh Joshi , Kuo-Tung Chang , Edward Franklin Runnion , Sung-Chul Lee , Sung-Yong Chung , Yanxiang Liu , Yu Sun
Inventor： Yuji Mizuguchi , Mark W. Randolph , Darlene Gay Hamilton , Yi He , Zhizheng Liu , Yanxia (Emma) Lin , Xianmin Yi , Gulzar Kathawala , Amol Ramesh Joshi , Kuo-Tung Chang , Edward Franklin Runnion , Sung-Chul Lee , Sung-Yong Chung , Yanxiang Liu , Yu Sun
IPC: G11C16/04
CPC classification number: G11C16/26 , G11C16/08 , G11C16/3427
Abstract: Systems, methods, and devices that facilitate applying a predefined negative gate voltage to wordlines adjacent to a selected wordline associated with a memory cell selected during a read or verify operation to facilitate reducing adjacent wordline disturb are presented. A memory component can comprise an optimized operation component that can apply a predefined negative gate voltage to wordlines adjacent to a selected wordline associated with a memory cell selected for a read or verify operation, based at least in part on predefined operation criteria, to facilitate reducing adjacent wordline disturb in the selected memory cell to facilitate reducing a shift in the voltage threshold and maintain a desired operation window. The optimized operation component optionally can include an evaluator component that can facilitate determining whether a negative gate voltage applied to adjacent wordlines is to be adjusted to facilitate reducing adjacent wordline disturb below a predetermined threshold amount.
Abstract translation: 提出了有助于将预定义的负栅极电压施加到与在读取或验证操作期间选择的存储器单元相关联的所选字线相邻的字线的系统，方法和设备，以便于减少相邻字线干扰。 存储器组件可以包括优化的操作部件，其可以至少部分地基于预定义的操作标准，将预定义的负栅极电压施加到与被选择用于读取或验证操作所选择的存储器单元相关联的所选字线相邻的字线上，以便减少 所选择的存储单元中的相邻字线干扰，以便减少电压阈值的移位并保持期望的操作窗口。 优化的操作组件可选地可以包括评估器组件，其可以便于确定施加到相邻字线的负栅极电压是否被调整以便于将相邻字线干扰降低到低于预定阈值量。
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4.发明授权公开(公告)号：US07305162B2
公开(公告)日：2007-12-04
申请号：US10164932
申请日：2002-05-30
Applicant: Dmitri E. Nikonov , Xianmin Yi
Inventor： Dmitri E. Nikonov , Xianmin Yi
IPC: G02B6/26
CPC classification number: G02B6/12028 , G02B6/12019 , G02B6/29352 , G02B6/29398
Abstract: An interference waveguide device made of a material with a positive derivative of refractive index over temperature may be combined with a compensating waveguide device. The compensating waveguide device may be made of a material with opposite and larger derivative of refractive index. The outputs of the compensating device may be selectively coupled to inputs of the interference device to provide an athermal interference waveguide device.
Abstract translation: 由具有折射率的正导数超过温度的材料制成的干涉波导装置可以与补偿波导装置组合。 补偿波导器件可以由具有相反且较大的折射率导数的材料制成。 补偿装置的输出可以选择性地耦合到干涉装置的输入端以提供无热干扰波导装置。
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