公开(公告)号：US07477539B2

公开(公告)日：2009-01-13

申请号：US11657646

申请日：2007-01-25

申请人： Kae-won Kim ,  Tae-wan Kim ,  Young-jin Cho ,  In-Jun Hwang

发明人： Kae-won Kim ,  Tae-wan Kim ,  Young-jin Cho ,  In-Jun Hwang

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  G11C19/0808

摘要： Example embodiments may provide a magnetic device using magnetic domain dragging and a method of operating the same. An example embodiment magnetic device may include a data storage cell with a free layer having a switchable magnetization direction and a plurality of adjoining magnetic domains, a reference layer formed to correspond to a portion of the free layer and having a pinned magnetization direction, wherein a plurality of data bit regions may be formed in an array in the free layer, each of the data bit regions being formed with an effective size unit of the reference layer, so that the data storage cell may store a plurality of bits of data in an array, and a first input portion electrically connected to at least one of the data bit regions of the free layer and the reference layer to apply at least one of a writing signal and a reading signal; and a second input portion electrically connected to the free layer to drag data stored in data bit regions of the free layer toward an adjacent data bit region, and applying a dragging signal for magnetic domain dragging.

摘要翻译： 示例性实施例可以提供使用磁畴牵引的磁性装置及其操作方法。 一个示例性实施例磁性装置可以包括具有自由层的数据存储单元，该自由层具有可切换的磁化方向和多个相邻的磁畴，所述参考层形成为对应于自由层的一部分并且具有钉扎的磁化方向，其中a 可以在自由层中的阵列中形成多个数据位区域，每个数据位区域由参考层的有效大小单位形成，使得数据存储单元可以在多个数据位区域中存储多个数据位 阵列，以及电连接到自由层和参考层的数据位区域中的至少一个的第一输入部分，以施加写信号和读信号中的至少一个; 以及第二输入部分，其电连接到所述自由层，以将存储在所述自由层的数据位区域中的数据拖向相邻数据位区域，以及施加用于磁畴拖动的拖动信号。

公开(公告)号：US07439770B2

公开(公告)日：2008-10-21

申请号：US11654002

申请日：2007-01-17

申请人： Tae-wan Kim ,  Kee-won Kim ,  Hyung-soon Shin ,  Seung-jun Lee ,  In-jun Hwang ,  Young-jin Cho

发明人： Tae-wan Kim ,  Kee-won Kim ,  Hyung-soon Shin ,  Seung-jun Lee ,  In-jun Hwang ,  Young-jin Cho

IPC分类号： H03K19/21

CPC分类号： G11C11/16 ,  H03K19/18 ,  H03K19/21

摘要： MTJ cell based logic circuits and MTJ cell drivers having improved operating speeds compared to the conventional art, and operating methods thereof are described. An MTJ cell driver may include a lower electrode, an MTJ cell on the lower electrode, an upper electrode on the MTJ cell, and first through third input lines arranged in parallel above the upper electrode

摘要翻译： 描述了与传统技术相比具有改进的操作速度的基于MTJ单元的逻辑电路和MTJ单元驱动器及其操作方法。 MTJ单元驱动器可以包括下电极，下电极上的MTJ单元，MTJ单元上的上电极以及平行于上电极上方布置的第一至第三输入线

公开(公告)号：US07399336B2

公开(公告)日：2008-07-15

申请号：US11393691

申请日：2006-03-31

申请人： Soon-ho Kim ,  Jae-young Choi ,  Tae-wan Kim ,  Eun-bum Cho ,  Yong-kyun Lee

发明人： Soon-ho Kim ,  Jae-young Choi ,  Tae-wan Kim ,  Eun-bum Cho ,  Yong-kyun Lee

IPC分类号： B22F1/00

CPC分类号： B22F1/0085 ,  B22F2999/00 ,  B82Y25/00 ,  H01F1/14733 ,  H01M4/52 ,  Y10S977/777 ,  B22F1/0022

摘要： Provided are non-magnetic nickel powders and a method for preparing the same. The nickel powders have non-magnetic property and a HCP crystal structure. The method include (a) dispersing nickel powders with a FCC crystal structure in an organic solvent to prepare a starting material dispersion, and (b) heating the starting material dispersion to transform the nickel powders with the FCC crystal structure to the nickel powders with the HCP crystal structure. The nickel powders do not exhibit magnetic agglomeration phenomenon. Therefore, the pastes for inner electrode formation in various electronic devices, which contain the nickel powders of the present invention, can keep the well-dispersed state. Also, inner electrodes made of the nickel powders can have a low impedance value even at high frequency band.

摘要翻译： 提供非磁性镍粉末及其制备方法。 镍粉具有非磁性和HCP晶体结构。 该方法包括（a）将FCC晶体结构的镍粉分散在有机溶剂中以制备原料分散体，（b）加热原料分散液，将FCC晶体结构的镍粉转化为镍粉， HCP晶体结构。 镍粉不显示磁性聚集现象。 因此，含有本发明的镍粉末的各种电子器件中的内部电极形成用糊料可以保持良好的分散状态。 此外，即使在高频带，由镍粉制成的内电极也可以具有低阻抗值。

公开(公告)号：US07378716B2

公开(公告)日：2008-05-27

申请号：US10987185

申请日：2004-11-15

申请人： Tae-wan Kim ,  Sang-jin Park ,  In-jun Hwang

发明人： Tae-wan Kim ,  Sang-jin Park ,  In-jun Hwang

IPC分类号： H01L29/82 ,  H01L43/00

CPC分类号： G11C11/16 ,  B82Y25/00 ,  H01F10/135 ,  H01F10/3254 ,  H01F10/3272 ,  H01L43/08

摘要： A magnetic tunneling junction (MTJ) cell includes a free magnetic layer having a low magnetic moment, and a magnetic random access memory (MRAM) includes the MTJ cell. The MTJ cell of the MRAM includes a lower electrode, a lower magnetic layer, a tunneling layer, an upper magnetic layer and an upper electrode, which are sequentially stacked on the lower electrode. The upper magnetic layer includes a free magnetic layer having a thickness of about 5 nm or less. The MTJ cell may have an aspect ratio of about 2 or less, and the free magnetic layer may have a magnetic moment of about 800 emu/cm3 or less.

摘要翻译： 磁性隧道结（MTJ）单元包括具有低磁矩的自由磁性层，磁性随机存取存储器（MRAM）包括MTJ单元。 MRAM的MTJ单元包括依次堆叠在下电极上的下电极，下磁层，隧道层，上磁层和上电极。 上磁性层包括厚度约5nm以下的自由磁性层。 MTJ单元可以具有约2或更小的纵横比，并且自由磁性层可具有约800emu / cm 3以下的磁矩。

公开(公告)号：US20080118993A1

公开(公告)日：2008-05-22

申请号：US12000156

申请日：2007-12-10

申请人： Sang-jin Park ,  Tae-wan Kim ,  Wan-jun Park ,  Jang-eun Lee

发明人： Sang-jin Park ,  Tae-wan Kim ,  Wan-jun Park ,  Jang-eun Lee

IPC分类号： H01L21/00

CPC分类号： H01L43/08 ,  G11C11/15 ,  H01L43/12

摘要： A magnetic random access memory (MRAM), and a method of manufacturing the same, includes a switching device and a magnetic tunneling junction (MTJ) cell connected to the switching device, wherein the MTJ cell includes a pinned film having a metal film and a magnetic film, the magnetic film enclosing the metal film.

摘要翻译： 磁性随机存取存储器（MRAM）及其制造方法包括连接到开关器件的开关器件和磁性隧道结（MTJ）单元，其中MTJ单元包括具有金属膜和 磁膜，磁膜封闭金属膜。

公开(公告)号：US20070195586A1

公开(公告)日：2007-08-23

申请号：US11655192

申请日：2007-01-19

申请人： Tae-Wan Kim ,  In-Jun Hwang ,  Young-Jin Cho ,  Kee-Won Kim

发明人： Tae-Wan Kim ,  In-Jun Hwang ,  Young-Jin Cho ,  Kee-Won Kim

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  H01L27/228

摘要： A magnetic memory device and methods thereof are provided. The example magnetic memory device may include a transistor disposed within a given unit cell region and a magnetic tunneling junction (MTJ) element connected to the transistor, the MTJ element including an MTJ cell and first and second pad layers forming a magnetic field at first and second ends of the MTJ cell, the transistor including a drain connected to the first pad layer in the given unit cell region and a bit line, a source connected to the second pad layer in an adjacent unit cell region, and a gate connected to a word line corresponding to the given unit cell region. A first example method may include writing data into a MTJ element by polarizing a selected memory region connected to a word line, a first magnetic field at a first end of the MTJ element controlled by a first transistor corresponding to the selected memory region and a second magnetic field at a second end of the MTJ element controlled by a second transistor associated with an adjacent MJT element, the adjacent MJT element connected to the same word line as the MJT element. A second example method may include applying a first current to a first portion of a MTJ element on a first path from a word line to the MTJ element and applying a second current to a second portion of the MTJ element on a second path from the word line to the MTJ element, each of the first and second currents lower than a current threshold, the current threshold being a minimum current for initiating a polarization of the MTJ element, and a sum of the first and second currents at least equal to the current threshold.

摘要翻译： 提供了磁存储器件及其方法。 示例磁存储器件可以包括设置在给定单元单元区域内的晶体管和连接到晶体管的磁隧道结（MTJ）元件，MTJ元件包括MTJ单元，第一和第二焊盘层首先形成磁场， MTJ单元的第二端，晶体管包括连接到给定单元单元区域中的第一焊盘层的漏极和位线，连接到相邻单元区域中的第二焊盘层的源极和连接到 对应于给定单元格区域的字线。 第一示例性方法可以包括通过使连接到字线的所选择的存储器区域偏振来将数据写入MTJ元件中，在由对应于所选择的存储器区域的第一晶体管控制的MTJ元件的第一端处的第一磁场，以及第二 由与相邻MJT元件相关联的第二晶体管控制的MTJ元件的第二端处的磁场，相邻的MJT元件连接到与MJT元件相同的字线。 第二示例性方法可以包括将第一电流施加到从字线到MTJ元件的第一路径上的MTJ元件的第一部分，并且将第二电流施加到来自该字的第二路径上的MTJ元件的第二部分 线路到MTJ元件，第一和第二电流中的每一个低于电流阈值，电流阈值是用于启动MTJ元件的极化的最小电流，以及至少等于电流的第一和第二电流的和 阈。

公开(公告)号：US20070086645A1

公开(公告)日：2007-04-19

申请号：US11281389

申请日：2005-11-18

申请人： Tae-Wan Kim ,  Byeong-Ho Choi ,  Je-Woo Kim ,  Hyok Song

发明人： Tae-Wan Kim ,  Byeong-Ho Choi ,  Je-Woo Kim ,  Hyok Song

IPC分类号： G06K9/00 ,  G06K9/36

CPC分类号： G06K9/20 ,  G06K2209/40 ,  G06T7/593

摘要： The present invention relates to an intermediate image synthesizing method using a mesh based on a multi-view square camera structure. In accordance with the present invention, an accurate disparity vector may be obtained since a shared area is searched for a predetermined time interval using a distance matching and a synthesized image is generated for each area based thereon, an occlusion region is reduced by using three reference images, the synthesized image may be easily generated even for an image having a large disparity, and a converted outline may be accurately expressed, and a high three-dimensional effect may be represented due to the image conversion through the mesh based on a vertex of the outline.

摘要翻译： 本发明涉及使用基于多视角方形相机结构的网格的中间图像合成方法。 根据本发明，可以获得精确的视差矢量，因为使用距离匹配搜索预定时间间隔的共享区域，并且基于每个区域生成合成图像，通过使用三个参考来减少遮挡区域 图像，即使对于具有大视差的图像也可以容易地生成合成图像，并且可以精确地表达转换轮廓，并且可以由于通过网格的图像转换而基于顶点的顶点来表示高三维效果 大纲。

公开(公告)号：US20060139992A1

公开(公告)日：2006-06-29

申请号：US11164579

申请日：2005-11-29

申请人： In-jun Hwang ,  Tae-wan Kim ,  Won-cheol Jeong

发明人： In-jun Hwang ,  Tae-wan Kim ,  Won-cheol Jeong

IPC分类号： G11C11/14 ,  G11C11/15

CPC分类号： G11C11/15

摘要： An exemplary embodiment of a magnetic random access memory (MRAM) device includes a magnetic tunnel junction having a free layer, a first electrode (first magnetic field generating means) having a first portion that covers a surface of the free layer, and an electric power source connected to the first electrode via a connection that covers less than half of the first portion of the first electrode. Another exemplary embodiment of an MRAM device includes a magnetic tunnel junction, first and second electrodes (first and second magnetic field generating means) directly connected to the magnetic tunnel junction on opposite sides of the magnetic tunnel junction, and an electric power source having one pole connected to the first electrode via a first connection and having a second pole connected to the second electrode via a second connection, wherein the first and second connections are laterally offset from the connections between the first and second electrodes and the magnetic tunnel junction. Methods of operating and manufacturing these magnetic random access memories are also disclosed.

公开(公告)号：US07061034B2

公开(公告)日：2006-06-13

申请号：US10830119

申请日：2004-04-23

申请人： Sang-jin Park ,  Tae-wan Kim ,  Jung-hyun Lee ,  Wan-jun Park ,  I-hun Song

发明人： Sang-jin Park ,  Tae-wan Kim ,  Jung-hyun Lee ,  Wan-jun Park ,  I-hun Song

IPC分类号： H01L31/062

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11C11/16 ,  H01F10/3254 ,  H01F41/307 ,  H01L27/228

摘要： In a magnetic random access memory (MRAM) having a transistor and a magnetic tunneling junction (MTJ) layer in a unit cell, the MTJ layer includes a lower magnetic layer, an oxidation preventing layer, a tunneling oxide layer, and an upper magnetic layer, which are sequentially stacked. The tunneling oxide layer may be formed using an atomic layer deposition (ALD) method. At least the oxidation preventing layer may be formed using a method other than the ALD method.

摘要翻译： 在单元中具有晶体管和磁隧道结（MTJ）层的磁性随机存取存储器（MRAM）中，MTJ层包括下磁层，防氧化层，隧道氧化物层和上磁层 ，顺序堆叠。 隧道氧化物层可以使用原子层沉积（ALD）方法形成。 至少防氧化层可以使用除ALD法以外的方法形成。

公开(公告)号：US20060069076A1

公开(公告)日：2006-03-30

申请号：US11172317

申请日：2005-06-29

申请人： Yu Sun ,  Tae-Wan Kim ,  Alan Tall

发明人： Yu Sun ,  Tae-Wan Kim ,  Alan Tall

IPC分类号： A61K31/57 ,  A61K31/203

CPC分类号： A61K31/426 ,  A61K31/203 ,  A61K31/57

摘要： This invention provides methods for decreasing the amount of Aβ peptide produced by a neuronal cell comprising contacting the cell with an agent that, when in contact with the neuronal cell, causes activation of the cell's Liver X Receptor (LXR) and/or Retinoid X Receptor (RXR). This invention also provides for related therapeutic and prophylactic methods. Finally, this invention provides related articles of manufacture.

摘要翻译： 本发明提供了减少由神经元细胞产生的Aβ肽量的方法，包括使细胞与当与神经细胞接触导致细胞的肝X受体（LXR）和/或类视黄醇X受体 （RXR）。 本发明还提供了相关的治疗和预防方法。 最后，本发明提供了相关的制造品。