Invention Grant
US07378716B2 Magnetic tunneling junction cell having a free magnetic layer with a low magnetic moment and magnetic random access memory having the same
有权
磁性隧道结电池具有具有低磁矩的自由磁性层和具有该磁性随机存取存储器的磁性随机存取存储器
- Patent Title: Magnetic tunneling junction cell having a free magnetic layer with a low magnetic moment and magnetic random access memory having the same
- Patent Title (中): 磁性隧道结电池具有具有低磁矩的自由磁性层和具有该磁性随机存取存储器的磁性随机存取存储器
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Application No.: US10987185Application Date: 2004-11-15
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Publication No.: US07378716B2Publication Date: 2008-05-27
- Inventor: Tae-wan Kim , Sang-jin Park , In-jun Hwang
- Applicant: Tae-wan Kim , Sang-jin Park , In-jun Hwang
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2003-0080573 20031114
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L43/00
Abstract:
A magnetic tunneling junction (MTJ) cell includes a free magnetic layer having a low magnetic moment, and a magnetic random access memory (MRAM) includes the MTJ cell. The MTJ cell of the MRAM includes a lower electrode, a lower magnetic layer, a tunneling layer, an upper magnetic layer and an upper electrode, which are sequentially stacked on the lower electrode. The upper magnetic layer includes a free magnetic layer having a thickness of about 5 nm or less. The MTJ cell may have an aspect ratio of about 2 or less, and the free magnetic layer may have a magnetic moment of about 800 emu/cm3 or less.
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