发明授权
US07061034B2 Magnetic random access memory including middle oxide layer and method of manufacturing the same
失效
包括中间氧化物层的磁性随机存取存储器及其制造方法
- 专利标题： Magnetic random access memory including middle oxide layer and method of manufacturing the same
- 专利标题（中）： 包括中间氧化物层的磁性随机存取存储器及其制造方法
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申请号： US10830119申请日： 2004-04-23
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公开(公告)号： US07061034B2公开(公告)日： 2006-06-13
- 发明人: Sang-jin Park , Tae-wan Kim , Jung-hyun Lee , Wan-jun Park , I-hun Song
- 申请人： Sang-jin Park , Tae-wan Kim , Jung-hyun Lee , Wan-jun Park , I-hun Song
- 申请人地址： KR Suwon-si
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si
- 代理机构： Lee & Morse, P.C.
- 优先权： KR10-2003-0025716 20030423
- 主分类号： H01L31/062
- IPC分类号： H01L31/062
摘要：
In a magnetic random access memory (MRAM) having a transistor and a magnetic tunneling junction (MTJ) layer in a unit cell, the MTJ layer includes a lower magnetic layer, an oxidation preventing layer, a tunneling oxide layer, and an upper magnetic layer, which are sequentially stacked. The tunneling oxide layer may be formed using an atomic layer deposition (ALD) method. At least the oxidation preventing layer may be formed using a method other than the ALD method.
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