公开(公告)号：US5895265A

公开(公告)日：1999-04-20

申请号：US821769

申请日：1997-03-20

申请人： Yasunori Inoue ,  Kazutoshi Tsujimura ,  Shinichi Tanimoto ,  Yasuhiko Yamashita ,  Kiyoshi Yoneda ,  Yoshikazu Ibara

发明人： Yasunori Inoue ,  Kazutoshi Tsujimura ,  Shinichi Tanimoto ,  Yasuhiko Yamashita ,  Kiyoshi Yoneda ,  Yoshikazu Ibara

IPC分类号： H01L23/532 ,  H01L21/44

CPC分类号： H01L23/53223 ,  H01L2924/0002

摘要： A semiconductor device includes an insulating layer and an interconnection layer having a conductive layer provided over the insulating layer. The interconnection layer is patterned by photolithography. The device further includes a cap-metal layer, which is deposited on the conductive layer and suppresses reflection of light beams at the time of patterning the interconnection layer. The cap-metal layer has any one of the following structures: a double-layered structure having a titanium nitride layer and a titanium layer located between the titanium nitride layer and the conductive layer; a double-layered structure having a titanium nitride layer and an aluminum-titanium alloy layer located between the titanium nitride layer and the conductive layer; and a single-layered structure consisting essentially of an aluminum-titanium alloy. These design ensure accurate interconnection patterning in the photolithography, and provide improved EM and SM immunities of the interconnection.

摘要翻译： 半导体器件包括绝缘层和具有设置在绝缘层上的导电层的互连层。 通过光刻将互连层图案化。 该装置还包括帽形金属层，其沉积在导电层上并抑制在构图互连层时光束的反射。 帽金属层具有以下结构之一：具有氮化钛层和位于氮化钛层和导电层之间的钛层的双层结构; 具有氮化钛层和位于氮化钛层和导电层之间的铝 - 钛合金层的双层结构; 以及主要由铝 - 钛合金组成的单层结构。 这些设计确保在光刻中精确的互连图案化，并且提供互连的改善的EM和SM抗扰度。

公开(公告)号：US07781677B2

公开(公告)日：2010-08-24

申请号：US12135668

申请日：2008-06-09

申请人： Ryo Matsubara ,  Hirotsugu Fusayasu ,  Shinichi Tanimoto ,  Seiji Hamada

发明人： Ryo Matsubara ,  Hirotsugu Fusayasu ,  Shinichi Tanimoto ,  Seiji Hamada

IPC分类号： H01B5/16 ,  H04B3/00

CPC分类号： H04B3/30 ,  H01B11/00 ,  H04L25/0272

摘要： A transmission cable that has three signal lines, and in which there is little unwanted radiation noise, is provided. In a section that is perpendicular to the longitudinal direction of the differential transmission cable, the distance between any two signal lines of the three signal lines is equal to a predetermined value. The differential transmission cable is twisted in its longitudinal direction. The differential transmission cable further includes a dielectric core line, and the signal lines are formed on the surface of the dielectric core line. In the differential transmission cable, the signal lines are formed in a helix in the longitudinal direction of the dielectric core line.

摘要翻译： 提供具有三条信号线并且其中没有不希望的辐射噪声的传输电缆。 在与差动传输电缆的纵向方向垂直的部分中，三条信号线的任意两条信号线之间的距离等于预定值。 差速传动电缆在其纵向方向上扭转。 差分传输电缆还包括介质芯线，并且信号线形成在介质芯线的表面上。 在差分传输电缆中，信号线在介质芯线的纵向上以螺旋形成。

公开(公告)号：US06380064B1

公开(公告)日：2002-04-30

申请号：US09223404

申请日：1998-12-30

申请人： Hideki Mizuhara ,  Shinichi Tanimoto ,  Hiroyuki Watanabe ,  Yasunori Inoue

发明人： Hideki Mizuhara ,  Shinichi Tanimoto ,  Hiroyuki Watanabe ,  Yasunori Inoue

IPC分类号： H01L214763

CPC分类号： H01L23/53223 ,  H01L21/76838 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device having a semiconductor substrate and a wiring layer, which is doped with an impurity, located on the substrate. The semiconductor device has upper and lower wiring layers apart from each other. An electric insulating film electrically insulates between the upper and lower wiring layers. The insulating film has a contact hole. A wiring material is packed with the contact hole to electrically connect the upper and lower wiring layers. The impurity is contained in the lower wiring layer to decrease its resistivity.

摘要翻译： 具有半导体衬底和掺杂有杂质的布线层的半导体器件位于衬底上。 半导体器件具有彼此分开的上和下布线层。 电绝缘膜在上下布线层之间电绝缘。 绝缘膜具有接触孔。 布线材料装有接触孔以电连接上下布线层。 杂质包含在下布线层中以降低其电阻率。