发明授权
- 专利标题： Semiconductor devices and process for producing the same
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US09223404申请日： 1998-12-30
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公开(公告)号： US06380064B1公开(公告)日： 2002-04-30
- 发明人: Hideki Mizuhara , Shinichi Tanimoto , Hiroyuki Watanabe , Yasunori Inoue
- 申请人： Hideki Mizuhara , Shinichi Tanimoto , Hiroyuki Watanabe , Yasunori Inoue
- 优先权： JP8-256319 19960927
- 主分类号： H01L214763
- IPC分类号： H01L214763
摘要：
A semiconductor device having a semiconductor substrate and a wiring layer, which is doped with an impurity, located on the substrate. The semiconductor device has upper and lower wiring layers apart from each other. An electric insulating film electrically insulates between the upper and lower wiring layers. The insulating film has a contact hole. A wiring material is packed with the contact hole to electrically connect the upper and lower wiring layers. The impurity is contained in the lower wiring layer to decrease its resistivity.
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