公开(公告)号：US20110070687A1

公开(公告)日：2011-03-24

申请号：US12953716

申请日：2010-11-24

申请人： Robert D. Wieting

发明人： Robert D. Wieting

IPC分类号： H01L31/18

CPC分类号： H01L31/0322 ,  H01L31/03923 ,  H01L31/1876 ,  Y02E10/541 ,  Y02P70/521

摘要： The thermal management and method for large scale processing of CIS and/or CIGS based thin film overlaying glass substrates. According to an embodiment, the present invention provides a method for fabricating a copper indium diselenide semiconductor film. The method includes providing a plurality of substrates, each of the substrates having a copper and indium composite structure. The method also includes transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the plurality of substrates being defined by a number N, where N is greater than 5. The method further includes introducing a gaseous species including a selenide species and a carrier gas into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature, the second temperature ranging from about 350° C. to about 450° C. to at least initiate formation of a copper indium diselenide film from the copper and indium composite structure on each of the substrates.

公开(公告)号：US20110070686A1

公开(公告)日：2011-03-24

申请号：US12953708

申请日：2010-11-24

申请人： Robert D. Wieting

发明人： Robert D. Wieting

IPC分类号： H01L31/0352

CPC分类号： H01L31/0322 ,  H01L31/03923 ,  H01L31/1876 ,  Y02E10/541 ,  Y02P70/521

摘要： The thermal management and method for large scale processing of CIS and/or CIGS based thin film overlaying glass substrates. According to an embodiment, the present invention provides a method for fabricating a copper indium diselenide semiconductor film. The method includes providing a plurality of substrates, each of the substrates having a copper and indium composite structure. The method also includes transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the plurality of substrates being defined by a number N, where N is greater than 5. The method further includes introducing a gaseous species including a selenide species and a carrier gas into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature, the second temperature ranging from about 350° C. to about 450° C. to at least initiate formation of a copper indium diselenide film from the copper and indium composite structure on each of the substrates.

公开(公告)号：US20110070684A1

公开(公告)日：2011-03-24

申请号：US12953697

申请日：2010-11-24

申请人： Robert D. Wieting

发明人： Robert D. Wieting

IPC分类号： H01L31/18

CPC分类号： H01L31/0322 ,  H01L31/03923 ,  H01L31/1876 ,  Y02E10/541 ,  Y02P70/521

摘要： The thermal management and method for large scale processing of CIS and/or CIGS based thin film overlaying glass substrates. According to an embodiment, the present invention provides a method for fabricating a copper indium diselenide semiconductor film. The method includes providing a plurality of substrates, each of the substrates having a copper and indium composite structure. The method also includes transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the plurality of substrates being defined by a number N, where N is greater than 5. The method further includes introducing a gaseous species including a selenide species and a carrier gas into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature, the second temperature ranging from about 350° C. to about 450° C. to at least initiate formation of a copper indium diselenide film from the copper and indium composite structure on each of the substrates.

摘要翻译： 用于CIS和/或CIGS薄膜覆盖玻璃基板的大规模处理的热管理和方法。 根据实施例，本发明提供一种制造铜铟二硒化物半导体膜的方法。 该方法包括提供多个基板，每个基板具有铜和铟复合结构。 所述方法还包括将多个基板转移到炉中，所述多个基板中的每一个基板相对于重力沿垂直取向设置，所述多个基板由数目N定义，其中N大于5。 该方法还包括将包含硒化物种类和载气的气态物质引入炉中并将热能传递到炉中以将温度从第一温度升高到第二温度，第二温度范围为约350℃至 约450℃，以至少从每个基底上的铜和铟复合结构引发铜铟二硒化物膜的形成。

公开(公告)号：US20110020977A1

公开(公告)日：2011-01-27

申请号：US12577133

申请日：2009-10-09

申请人： Robert D. Wieting

发明人： Robert D. Wieting

IPC分类号： H01L31/032

CPC分类号： H01L31/18 ,  H01L31/046 ,  H01L31/0749 ,  Y02E10/541

摘要： A method for forming one or more patterns for a thin film photovoltaic material. The method includes providing a substrate including a molybdenum layer and an overlying absorber comprising a copper bearing species and a window layer comprising a cadmium bearing species. The substrate is supported to expose a surface of the window layer. In a specific embodiment, the method includes using a scribe device. The scribe device includes a scribe having a tip. The scribe device is configured to pivot about one or more regions and configured to apply pressure to the tip, such that the tip is placed on a selected region of the window layer or the absorber layer. The method moves the scribe device relative to the substrate in a direction to form a pattern on at least the window layer or the absorber layer at a determined speed maintaining the molybdenum layer free from the pattern.

摘要翻译： 一种用于形成用于薄膜光伏材料的一个或多个图案的方法。 该方法包括提供包括钼层的基材和包含铜轴承种类的上覆吸收剂和包含含镉种类的窗口层。 支撑衬底以暴露窗口层的表面。 在具体实施例中，该方法包括使用划线装置。 划线装置包括具有尖端的划线器。 划线装置构造成围绕一个或多个区域枢转并且构造成向尖端施加压力，使得尖端被放置在窗口层或吸收层的选定区域上。 该方法使划线装置相对于衬底在一定方向上以确定的速度在至少窗口层或吸收层上形成图案，从而保持钼层免于图案。

公开(公告)号：US20110020959A1

公开(公告)日：2011-01-27

申请号：US12569356

申请日：2009-09-29

申请人： ROBERT D. WIETING

发明人： ROBERT D. WIETING

IPC分类号： H01L21/66

CPC分类号： H01L31/18 ,  H01L31/048 ,  H01L31/0749 ,  H01L31/1876 ,  Y02E10/541 ,  Y02P70/521

摘要： A method for processing a thin film photovoltaic module. The method includes providing a plurality of substrates, each of the substrates having a first electrode layer and an overlying absorber layer composed of copper indium gallium selenide (CIGS) or copper indium selenide (CIS) material. The absorber material comprises a plurality of sodium bearing species. The method maintains the plurality of substrates in a controlled environment after formation of at least the absorber layer through one or more processes up to a lamination process. The controlled environment has a relative humidity of less than 10% and a temperature ranging from about 10 Degrees Celsius to about 40 Degrees Celsius. The method subjects the plurality of substrates to a liquid comprising water at a temperature from about 10 Degrees Celsius to about 80 Degrees Celsius to process the plurality of substrates after formation of the absorber layer. The plurality of substrates having the absorber layer is subjected to an environment having a relative humidity of greater than about 10% to a time period of less then four hours.

摘要翻译： 一种薄膜光伏组件的处理方法。 该方法包括提供多个基板，每个基板具有第一电极层和由铜铟镓硒（CIGS）或铜铟硒（CIS）材料构成的上覆吸收层。 吸收材料包括多种含钠物质。 该方法通过一个或多个过程形成至少吸收层直至层压过程，在受控的环境中保持多个基板。 受控环境的相对湿度小于10％，温度范围为约10摄氏度至约40摄氏度。 该方法使多个基底在约10摄氏度至约80摄氏度的温度下包含水的液体，以在形成吸收层之后处理多个基底。 具有吸收层的多个基板经受相对湿度大于约10％至少于4小时的环境。

公开(公告)号：US20100261307A1

公开(公告)日：2010-10-14

申请号：US12565735

申请日：2009-09-23

申请人： ROBERT D. WIETING

发明人： ROBERT D. WIETING

IPC分类号： H01L31/18

CPC分类号： H01L31/0322 ,  H01L31/022425 ,  H01L31/0392 ,  H01L31/03923 ,  H01L31/046 ,  Y02E10/541

摘要： A method for forming a thin film photovoltaic device having patterned electrode films includes providing a soda lime glass substrate with an overlying lower electrode layer comprising a molybdenum material. The method further includes subjecting the lower electrode layer with one or more pulses of electromagnetic radiation from a laser source to ablate one or more patterns associated with one or more berm structures from the lower electrode layer. Furthermore, the method includes processing the lower electrode layer comprising the one or more patterns using a mechanical brush device to remove the one or more berm structures followed by treating the lower electrode layer comprising the one or more patterns free from the one or more berm structures. The method further includes forming a layer of photovoltaic material overlying the lower electrode layer and forming a first zinc oxide layer overlying the layer of photovoltaic material.

摘要翻译： 用于形成具有图案化电极膜的薄膜光伏器件的方法包括提供具有包含钼材料的上覆下部电极层的钠钙玻璃基板。 该方法还包括使来自激光源的电磁辐射的一个或多个脉冲对下部电极层进行烧蚀，以从下部电极层烧蚀与一个或多个护理结构相关联的一个或多个图案。 此外，该方法包括使用机械刷装置处理包括一个或多个图案的下电极层，以移除一个或多个导流结构，然后处理包含一个或多个不含一个或多个护堤结构的图案的下电极层 。 该方法还包括形成覆盖在下电极层上的光伏材料层，并形成覆盖在光伏材料层上的第一氧化锌层。

公开(公告)号：US20100258179A1

公开(公告)日：2010-10-14

申请号：US12567698

申请日：2009-09-25

申请人： Robert D. Wieting

发明人： Robert D. Wieting

IPC分类号： H01L31/00 ,  H01L31/18

CPC分类号： H01L31/0322 ,  H01L31/022425 ,  H01L31/0392 ,  H01L31/03923 ,  H01L31/03925 ,  H01L31/046 ,  H01L31/0463 ,  Y02E10/541

摘要： A method for fabricating a thin film solar cell includes providing a soda lime glass substrate comprising a surface region and a concentration of sodium oxide of greater than about 10 wt % and treating the surface region with one or more cleaning process, using a deionized water rinse, to remove surface contaminants having a particles size of greater than three microns. The method also includes forming a barrier layer overlying the surface region, forming a first molybdenum layer in tensile configuration overlying the barrier layer, and forming a second molybdenum layer in compressive configuration using a second process overlying the first molybdenum layer. Additionally, the method includes patterning the first molybdenum layer and the second molybdenum layer to form a lower electrode layer and forming a layer of photovoltaic material overlying the lower electrode layer. Moreover, the method includes forming a first zinc oxide layer overlying the layer of photovoltaic materials.

摘要翻译： 一种制造薄膜太阳能电池的方法包括提供包含大于约10重量％的表面区域和氧化钠浓度的钠钙玻璃基板，并使用去离子水冲洗法用一个或多个清洁工艺处理该表面区域 ，以去除具有大于3微米的颗粒尺寸的表面污染物。 该方法还包括形成覆盖表面区域的阻挡层，形成覆盖阻挡层的拉伸构型的第一钼层，以及使用覆盖第一钼层的第二工艺形成压缩构型的第二钼层。 此外，该方法包括图案化第一钼层和第二钼层以形成下电极层并形成覆盖在下电极层上的光伏材料层。 此外，该方法包括形成覆盖在光伏材料层上的第一氧化锌层。

公开(公告)号：US08628997B2

公开(公告)日：2014-01-14

申请号：US13236286

申请日：2011-09-19

申请人： Kannan Ramanathan ,  Robert D. Wieting

发明人： Kannan Ramanathan ,  Robert D. Wieting

IPC分类号： H01L31/18

CPC分类号： H01L31/0749 ,  H01L31/0322 ,  H01L31/0323 ,  H01L31/0682 ,  Y02E10/541 ,  Y02E10/547

摘要： A method for fabricating a thin film photovoltaic device is provided. The method includes providing a substrate comprising a thin film photovoltaic absorber which has a surface including copper, indium, gallium, selenium, and sulfur. The method further includes subjecting the surface to a material containing at least a zinc species substantially free of any cadmium. The surface is heated to cause formation of a zinc doped material. The zinc doped material is free from cadmium. Furthermore the method includes forming a zinc oxide material overlying the zinc doped material and forming a transparent conductive material overlying the zinc oxide material.

摘要翻译： 提供一种制造薄膜光伏器件的方法。 该方法包括提供包括具有包括铜，铟，镓，硒和硫的表面的薄膜光伏吸收体的衬底。 该方法还包括将表面经受至少含有基本上不含任何镉的锌物质的材料。 加热表面以引起锌掺杂材料的形成。 锌掺杂材料不含镉。 此外，该方法包括形成覆盖锌掺杂材料的氧化锌材料并形成覆盖氧化锌材料的透明导电材料。

公开(公告)号：US08507786B1

公开(公告)日：2013-08-13

申请号：US12818957

申请日：2010-06-18

申请人： Robert D. Wieting

发明人： Robert D. Wieting

IPC分类号： H01L31/042

CPC分类号： H01L31/035281 ,  H01L31/0463 ,  Y02E10/50

摘要： A method for fabricating a shaped thin-film photovoltaic device. The method includes providing a shaped substrate member including a surface region and forming a first electrode layer overlying the surface region. Additionally, the method includes forming an absorber comprising copper species, indium species, and selenide species overlying the first electrode layer. The method further includes scribing through the absorber using a mechanical tip to form a first pattern. Furthermore, the method includes forming a window layer comprising cadmium sulfide species overlying the absorber including the first pattern. Moreover, the method includes scribing through the window layer and the absorber using the mechanical tip to form a second pattern. The second pattern is separated a distance from the first pattern.

摘要翻译： 一种用于制造成形薄膜光伏器件的方法。 该方法包括提供包括表面区域并形成覆盖在表面区域上的第一电极层的成形衬底构件。 另外，该方法包括形成覆盖在第一电极层上的铜物质，铟物质和硒化物物质的吸收体。 该方法还包括使用机械尖端划线穿过吸收体以形成第一图案。 此外，该方法包括形成包括覆盖在包括第一图案的吸收体的硫化镉物质的窗口层。 此外，该方法包括通过窗口层和吸收体使用机械末端划线以形成第二图案。 第二图案与第一图案分开一段距离。

公开(公告)号：US08461061B2

公开(公告)日：2013-06-11

申请号：US13171089

申请日：2011-06-28

申请人： Paul Alexander ,  Jurg Schmitzberger ,  Ashish Tandon ,  Robert D. Wieting

发明人： Paul Alexander ,  Jurg Schmitzberger ,  Ashish Tandon ,  Robert D. Wieting

IPC分类号： H01L21/00

CPC分类号： H01L21/67316 ,  H01L21/67109 ,  H01L21/67313 ,  H01L21/6734 ,  H01L31/18

摘要： A method of supporting a plurality of planar substrates in a tube shaped furnace for conducting a thermal treatment process is disclosed. The method uses a boat fixture having a base frame including two length portions and a first width portion, a second width portion, and one or more middle members connected between the two length portions. Additionally, the method includes mounting a removable first grooved rod respectively on the first width portion, the second width portion, and each of the one or more middle members, each first grooved rod having a first plurality of grooves characterized by a first spatial configuration. The method further includes inserting one or two substrates of a plurality of planar substrates into each groove in the boat fixture separated by a distance.

摘要翻译： 公开了一种在管状炉中支撑多个平面基板以进行热处理工艺的方法。 该方法使用具有包括两个长度部分的基部框架和第一宽度部分，第二宽度部分以及连接在两个长度部分之间的一个或多个中间部件的船舶固定装置。 另外，该方法包括分别在第一宽度部分，第二宽度部分和一个或多个中间部件中的每一个上安装可拆卸的第一带槽杆，每个第一带槽杆具有以第一空间构造为特征的第一多个凹槽。 该方法还包括将多个平面基板中的一个或两个基板插入分隔开一定距离的船夹具中的每个凹槽中。