发明申请
US20100261307A1 PATTERNING ELECTRODE MATERIALS FREE FROM BERM STRUCTURES FOR THIN FILM PHOTOVOLTAIC CELLS 有权
从薄膜光伏电池的BERM结构中获取电极材料

  • 专利标题: PATTERNING ELECTRODE MATERIALS FREE FROM BERM STRUCTURES FOR THIN FILM PHOTOVOLTAIC CELLS
  • 专利标题(中): 从薄膜光伏电池的BERM结构中获取电极材料
  • 申请号: US12565735
    申请日: 2009-09-23
  • 公开(公告)号: US20100261307A1
    公开(公告)日: 2010-10-14
  • 发明人: ROBERT D. WIETING
  • 申请人: ROBERT D. WIETING
  • 申请人地址: US CA San Jose
  • 专利权人: STION CORPORATION
  • 当前专利权人: STION CORPORATION
  • 当前专利权人地址: US CA San Jose
  • 主分类号: H01L31/18
  • IPC分类号: H01L31/18
PATTERNING ELECTRODE MATERIALS FREE FROM BERM STRUCTURES FOR THIN FILM PHOTOVOLTAIC CELLS
摘要:
A method for forming a thin film photovoltaic device having patterned electrode films includes providing a soda lime glass substrate with an overlying lower electrode layer comprising a molybdenum material. The method further includes subjecting the lower electrode layer with one or more pulses of electromagnetic radiation from a laser source to ablate one or more patterns associated with one or more berm structures from the lower electrode layer. Furthermore, the method includes processing the lower electrode layer comprising the one or more patterns using a mechanical brush device to remove the one or more berm structures followed by treating the lower electrode layer comprising the one or more patterns free from the one or more berm structures. The method further includes forming a layer of photovoltaic material overlying the lower electrode layer and forming a first zinc oxide layer overlying the layer of photovoltaic material.
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