公开(公告)号：US08859880B2

公开(公告)日：2014-10-14

申请号：US13006743

申请日：2011-01-14

申请人： Robert D. Wieting

发明人： Robert D. Wieting

IPC分类号： H01L31/042 ,  H01L31/0749 ,  H01L31/048 ,  H01L31/02 ,  H01L31/05

CPC分类号： H01L31/048 ,  H01L31/0201 ,  H01L31/02013 ,  H01L31/0504 ,  H01L31/0749 ,  Y02E10/50 ,  Y02E10/541

摘要： A method for integrating photovoltaic module includes providing a cover plate having a first surface and a second surface opposed to the first surface and supplying photovoltaic devices respectively formed on substrates. The photovoltaic devices include photovoltaic cells electrically coupled to each other, and each cell is characterized by a thin-film photovoltaic layer sandwiched between a first electrode material and a second electrode material. The first electrode material overlies the substrate and the second electrode material overlies the thin-film photovoltaic layer. The method further includes disposing the solar devices side by side to laminate with the cover plate by means of a first organic material filled between the second electrode material and the second surface. Each of the solar devices has a peripheral edge region being sealed by a second organic material. The method further includes electrically coupling the solar devices to each other.

摘要翻译： 一种用于集成光伏模块的方法包括提供具有第一表面和与第一表面相对的第二表面的盖板，并提供分别形成在基板上的光电器件。 光伏器件包括彼此电耦合的光伏电池，并且每个电池的特征在于夹在第一电极材料和第二电极材料之间的薄膜光伏层。 第一电极材料覆盖在基板上，第二电极材料覆盖在薄膜光伏层上。 该方法还包括通过填充在第二电极材料和第二表面之间的第一有机材料并排设置太阳能装置与盖板层压。 每个太阳能装置具有由第二有机材料密封的周边边缘区域。 该方法还包括将太阳能装置彼此电耦合。

公开(公告)号：US08425739B1

公开(公告)日：2013-04-23

申请号：US12565749

申请日：2009-09-23

申请人： Robert D. Wieting

发明人： Robert D. Wieting

IPC分类号： C23C14/32 ,  C23C14/00

CPC分类号： H01L31/022425 ,  H01L21/02491 ,  H01L21/02568 ,  H01L21/02579 ,  H01L21/02614 ,  H01L21/02631 ,  H01L31/0322 ,  H01L31/03923 ,  Y02E10/541

摘要： A method of processing a photovoltaic materials using a sputtering process including providing at least one transparent substrate having an overlying first electrode layer. The method further including forming an overlying copper and gallium layer using a first sputtering process within a first chamber from a first target including a copper species and a gallium species. Additionally, the method includes forming an indium layer overlying the copper and the gallium layer using a second sputtering process within the first chamber from a second target including an indium species. The method further includes forming a sodium bearing layer overlying the indium layer using a third sputtering process within the first chamber, thereby forming a composite film including the copper and gallium layer, the indium layer, and the sodium bearing layer. Furthermore, the method includes subjecting the composite film to at least a thermal treatment process to form a chalcopyrite absorber layer comprising copper, indium, gallium, and sodium therein.

摘要翻译： 一种使用溅射工艺处理光伏材料的方法，包括提供至少一个具有覆盖的第一电极层的透明衬底。 该方法还包括使用第一溅射工艺在第一室内从包括铜种类和镓物质的第一靶标形成覆盖铜和镓层。 此外，该方法包括使用第二腔室内的第二溅射工艺从包括铟物质的第二靶子形成覆盖铜和镓层的铟层。 该方法还包括在第一室内使用第三溅射工艺形成覆盖铟层的含钠层，从而形成包括铜和镓层，铟层和承载钠层的复合膜。 此外，该方法包括使复合膜至少进行热处理工艺以形成其中包含铜，铟，镓和钠的黄铜矿吸收层。

公开(公告)号：US08398772B1

公开(公告)日：2013-03-19

申请号：US12858342

申请日：2010-08-17

申请人： Ashish Tandon ,  Robert D. Wieting ,  Jurg Schmizberger ,  Paul Alexander

发明人： Ashish Tandon ,  Robert D. Wieting ,  Jurg Schmizberger ,  Paul Alexander

IPC分类号： C23C16/00 ,  C23C16/455 ,  C23C16/458

CPC分类号： C23C14/18 ,  C23C14/586 ,  C23C14/5866

摘要： An apparatus for reactive thermal treatment of thin film photovoltaic devices includes a furnace tube including an inner wall extended from a first end to a second end. The apparatus further includes a gas supply device coupled to the second end and configured to fill one or more working gases into the furnace tube. Additionally, the apparatus includes a cover configured to seal the furnace tube at the first end and serve as a heat sink for the one or more working gases. Furthermore, the apparatus includes a fixture mechanically attached to the cover. The fixture is configured to load an array of substrates into the furnace tube as the cover seals the furnace tube. Moreover, the apparatus includes a crescent shaped baffle member disposed seamlessly at a lower portion of the inner wall for blocking a convection current of the one or more working gases cooled by the cover.

摘要翻译： 一种用于薄膜光伏器件的反应热处理的设备包括：炉管，其包括从第一端延伸到第二端的内壁。 该装置还包括联接到第二端并被配置成将一种或多种工作气体填充到炉管中的气体供应装置。 另外，该装置包括盖子，其构造成在第一端处密封炉管，并且用作一个或多个工作气体的散热器。 此外，该装置包括机械地附接到盖的夹具。 夹具被配置为当盖子密封炉管时将基板阵列加载到炉管中。 此外，该装置包括一个新月形的挡板件，它可无缝地设置在内壁的下部，用于阻挡由盖冷却的一个或多个工作气体的对流。

公开(公告)号：US08383450B2

公开(公告)日：2013-02-26

申请号：US12569490

申请日：2009-09-29

申请人： Robert D. Wieting

发明人： Robert D. Wieting

IPC分类号： H01L21/84

CPC分类号： H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

摘要： A method for forming a thin film photovoltaic material. The method includes providing a plurality of substrates. Each of the substrates has a surface region, an overlying first electrode material, an absorber material including at least a copper species, an indium species, and a selenium species. The method immerses the plurality of substrates in an aqueous solution including an ammonia species, a cadmium species, and a organosulfur (for example, thiourea) species in a bath to form a cadmium sulfide window material having a thickness of less than about 200 Angstroms overlying the absorber material. The aqueous solution is maintained at a temperature ranging from about 50 to about 60 Degrees Celsius. The plurality of substrates having at least the absorber material and the window layer are removed from the aqueous solution. The aqueous solution is further subjected to a filter process to substantially remove one or more particles greater than about 5 microns.

摘要翻译： 一种形成薄膜光伏材料的方法。 该方法包括提供多个基板。 每个基板具有表面区域，上覆第一电极材料，至少包括铜物质，铟物质和硒物质的吸收材料。 该方法在浴中将多个基板浸入包括氨物种，镉物质和有机硫（例如硫脲））的水溶液中，以形成厚度小于约200埃的硫化镉窗材料 吸收材料。 水溶液保持在约50至约60摄氏度的温度。 从水溶液中除去至少具有吸收材料和窗口层的多个基板。 水溶液进一步进行过滤工艺以基本上除去大于约5微米的一种或多种颗粒。

公开(公告)号：US08372684B1

公开(公告)日：2013-02-12

申请号：US12776189

申请日：2010-05-07

申请人： Robert D. Wieting ,  Steven Aragon ,  Chester A. Farris, III

发明人： Robert D. Wieting ,  Steven Aragon ,  Chester A. Farris, III

IPC分类号： H01L21/00

CPC分类号： H01L31/0322 ,  H01L21/02422 ,  H01L21/02491 ,  H01L21/02568 ,  H01L21/02614 ,  H01L31/03926 ,  H01L31/188 ,  Y02E10/541 ,  Y02P70/521

摘要： The method and system for selenization in fabricating CIS and/or CIGS based thin film solar cell overlaying cylindrical glass substrates. The method includes providing a substrate, forming an electrode layer over the substrate and depositing a precursor layer of copper, indium, and/or gallium over the electrode layer. The method also includes disposing the substrate vertically in a furnace. Then a gas including a hydrogen species, a selenium species and a carrier gas are introduced into the furnace and heated to between about 350° C. and about 450° C. to at least initiate formation of a copper indium diselenide film from the precursor layer.

摘要翻译： 用于制造基于CIS和/或CIGS的薄膜太阳能电池覆盖圆柱形玻璃基板的硒化方法和系统。 该方法包括提供衬底，在衬底上形成电极层，并在电极层上沉积铜，铟和/或镓的前体层。 该方法还包括将基板垂直放置在炉中。 然后将包括氢物质，硒物质和载气的气体引入炉中并加热至约350℃至约450℃，以至少从起始层产生铜铟二硒化物膜的形成 。

公开(公告)号：US08241943B1

公开(公告)日：2012-08-14

申请号：US12774675

申请日：2010-05-05

申请人： Robert D. Wieting ,  Steven Aragon ,  Chester A. Farris, III

发明人： Robert D. Wieting ,  Steven Aragon ,  Chester A. Farris, III

IPC分类号： H01L21/00 ,  H01L31/00

CPC分类号： H01L31/0322 ,  H01L31/03923 ,  H01L31/0749 ,  Y02E10/541

摘要： A method of sodium doping in fabricating CIGS/CIS based thin film solar cells includes providing a shaped substrate member. The method includes forming a barrier layer over the surface region followed by a first electrode layer, and then a sodium bearing layer. A precursor layer of copper, indium, and/or gallium materials having an atomic ratio of copper/group III species no greater than 1.0 is deposited over the sodium bearing layer. The method further includes transferring the shaped substrate member to a second chamber and subjecting it to a thermal treatment process within an environment comprising gas-phase selenium species, followed by an environment comprising gas-phase sulfur species with the selenium species being substantially removed to form an absorber layer.

摘要翻译： 在制造CIGS / CIS的薄膜太阳能电池中的钠掺杂的方法包括提供成形的基板部件。 该方法包括在表面区域之后形成阻挡层，随后是第一电极层，然后形成含钠层。 具有不大于1.0的铜/ III族原子比的铜，铟和/或镓材料的前体层沉积在承载钠层上。 该方法还包括将成形的基底构件转移到第二腔室并使其在包括气相硒物质的环境中进行热处理过程，随后是包括气相硫物质的环境，其中硒物质被基本上除去以形成 吸收层。

公开(公告)号：US08142521B2

公开(公告)日：2012-03-27

申请号：US13049114

申请日：2011-03-16

申请人： Robert D. Wieting ,  Kenneth B. Doering ,  Jurg Schmitzburger

发明人： Robert D. Wieting ,  Kenneth B. Doering ,  Jurg Schmitzburger

IPC分类号： H01L21/00

CPC分类号： C23C16/45512 ,  C23C16/45565 ,  C23C16/45572 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/54 ,  H01L31/18 ,  Y10T29/413

摘要： An apparatus for fabricating thin films on substrate panels includes a deposition chamber enclosed by sidewalls, a lid, and a base. The apparatus includes a mixing chamber disposed above the lid and configured to receive vapor species and form a mixed vapor. The mixing chamber is coupled with the deposition chamber via inlets through the lid, including a diffuser plate. Two heater plates disposed side by side on the base supporting and heating two substrates.

摘要翻译： 用于在衬底面板上制造薄膜的设备包括由侧壁，盖子和底座包围的沉积室。 该设备包括设置在盖上方并构造成接收蒸气物质并形成混合蒸气的混合室。 混合室通过包括扩散板的盖子的入口与沉积室耦合。 两个加热板并排设置在基座上，支撑和加热两个基板。

公开(公告)号：US08088640B2

公开(公告)日：2012-01-03

申请号：US12953721

申请日：2010-11-24

申请人： Robert D. Wieting

发明人： Robert D. Wieting

IPC分类号： H01L21/00 ,  H01L31/00

CPC分类号： H01L31/0322 ,  H01L31/03923 ,  H01L31/1876 ,  Y02E10/541 ,  Y02P70/521

摘要： The thermal management and method for large scale processing of CIS and/or CIGS based thin film overlaying glass substrates. According to an embodiment, the present invention provides a method for fabricating a copper indium diselenide semiconductor film. The method includes providing a plurality of substrates, each of the substrates having a copper and indium composite structure. The method also includes transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the plurality of substrates being defined by a number N, where N is greater than 5. The method further includes introducing a gaseous species including a selenide species and a carrier gas into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature, the second temperature ranging from about 350° C. to about 450° C. to at least initiate formation of a copper indium diselenide film from the copper and indium composite structure on each of the substrates.

摘要翻译： 用于CIS和/或CIGS薄膜覆盖玻璃基板的大规模处理的热管理和方法。 根据实施例，本发明提供一种制造铜铟二硒化物半导体膜的方法。 该方法包括提供多个基板，每个基板具有铜和铟复合结构。 所述方法还包括将多个基板转移到炉中，所述多个基板中的每一个基板相对于重力沿垂直取向设置，所述多个基板由数目N定义，其中N大于5。 该方法还包括将包含硒化物种类和载气的气态物质引入炉中并将热能传递到炉中以将温度从第一温度升高到第二温度，第二温度范围为约350℃至 约450℃，以至少从每个基底上的铜和铟复合结构引发铜铟二硒化物膜的形成。

公开(公告)号：US08076176B2

公开(公告)日：2011-12-13

申请号：US12953708

申请日：2010-11-24

申请人： Robert D. Wieting

发明人： Robert D. Wieting

IPC分类号： H01L21/00

CPC分类号： H01L31/0322 ,  H01L31/03923 ,  H01L31/1876 ,  Y02E10/541 ,  Y02P70/521

摘要： The thermal management and method for large scale processing of CIS and/or CIGS based thin film overlaying glass substrates. According to an embodiment, the present invention provides a method for fabricating a copper indium diselenide semiconductor film. The method includes providing a plurality of substrates, each of the substrates having a copper and indium composite structure. The method also includes transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the plurality of substrates being defined by a number N, where N is greater than 5. The method further includes introducing a gaseous species including a selenide species and a carrier gas into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature, the second temperature ranging from about 350° C. to about 450° C. to at least initiate formation of a copper indium diselenide film from the copper and indium composite structure on each of the substrates.

公开(公告)号：US20110070688A1

公开(公告)日：2011-03-24

申请号：US12953725

申请日：2010-11-24

申请人： Robert D. Wieting

发明人： Robert D. Wieting

IPC分类号： H01L31/18

CPC分类号： H01L31/0322 ,  H01L31/03923 ,  H01L31/1876 ,  Y02E10/541 ,  Y02P70/521

摘要： The thermal management and method for large scale processing of CIS and/or CIGS based thin film overlaying glass substrates. According to an embodiment, the present invention provides a method for fabricating a copper indium diselenide semiconductor film. The method includes providing a plurality of substrates, each of the substrates having a copper and indium composite structure. The method also includes transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the plurality of substrates being defined by a number N, where N is greater than 5. The method further includes introducing a gaseous species including a selenide species and a carrier gas into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature, the second temperature ranging from about 350° C. to about 450° C. to at least initiate formation of a copper indium diselenide film from the copper and indium composite structure on each of the substrates.