Method and apparatus for inspecting defects on polishing pads to be used with chemical mechanical polishing apparatus
    21.
    发明申请
    Method and apparatus for inspecting defects on polishing pads to be used with chemical mechanical polishing apparatus 有权
    用于检查要与化学机械抛光装置一起使用的抛光垫上的缺陷的方法和装置

    公开(公告)号:US20030039387A1

    公开(公告)日:2003-02-27

    申请号:US10226850

    申请日:2002-08-23

    IPC分类号: G06K009/00

    CPC分类号: G01N21/94

    摘要: The present invention provides an apparatus and method for detecting or inspecting defects on a polishing pad for use in performing chemical mechanical polishing of a wafer. The apparatus for detecting the defects on the pad comprises a pad driving device for loading the pad thereon and moving the pad, at least one camera installed to face the pad for converting an image of the pad into an electrical signal and outputting the converted electrical signal, a digital image data acquisition device for converting the electrical signal transmitted from the camera into a digital signal, and an image data processing unit for processing the image data and detecting the defects on the pad.

    摘要翻译: 本发明提供了一种用于检测或检查用于进行晶片的化学机械抛光的抛光垫上的缺陷的装置和方法。 用于检测焊盘上的缺陷的装置包括:焊盘驱动装置,用于在其上装载焊盘并移动焊盘;至少一个相机,安装成面向焊盘,用于将焊盘的图像转换成电信号,并输出转换的电信号 ,用于将从相机发送的电信号转换成数字信号的数字图像数据获取装置,以及用于处理图像数据并检测焊盘上的缺陷的图像数据处理单元。

    FOUP PURGE SHIELD
    22.
    发明申请
    FOUP PURGE SHIELD 审中-公开

    公开(公告)号:US20200035531A1

    公开(公告)日:2020-01-30

    申请号:US16048200

    申请日:2018-07-27

    IPC分类号: H01L21/673 H01L21/67 B08B5/00

    摘要: A load port for loading wafers to and unloading wafers from a front opening unified pod (FOUP) includes a shield member that covers and provides a seal over an opening of the FOUP. The shield member includes a narrow wafer slot that is sized to allow a single wafer to be loaded to or unloaded from the FOUP but otherwise minimize loss of the purge environment within the FOUP. The shield member is movable so that the wafer slot may be moved vertically to provide a wafer transfer robot access to any desired wafer position within the FOUP. The shield member, for example, may be a flexible sheet that is held taut and is rolled onto and off of at least one roller to vertically position the wafer slot. The shield member may alternatively be one or more rigid members that slide on rails to vertically position the wafer slot.

    LOCAL PURGE WITHIN METROLOGY AND INSPECTION SYSTEMS

    公开(公告)号:US20200011786A1

    公开(公告)日:2020-01-09

    申请号:US16571729

    申请日:2019-09-16

    IPC分类号: G01N21/15 G03F7/20 G01N21/95

    摘要: A purge system includes a purge gas distribution manifold that includes at least one port through which light beam from an optical metrology or inspection head is transmitted. The purge gas distribution manifold includes a bottom surface having one or more apertures through which purge gas is expelled. The bottom surface is held in close proximity to the top surface of the substrate and the apertures may be distributed over the bottom surface of the purge gas distribution manifold so that purge gas is uniformly distributed over the entirety of the top surface of the substrate at all measurement positions of the substrate with respect to the optical metrology or inspection head.

    SUB-RESOLUTION DEFECT DETECTION
    24.
    发明申请

    公开(公告)号:US20190170655A1

    公开(公告)日:2019-06-06

    申请号:US16197737

    申请日:2018-11-21

    发明人: Nigel P. Smith

    IPC分类号: G01N21/88 G01N21/21 G01N21/95

    摘要: An optical metrology device, such as an interferometer, detects sub-resolution defects on a sample, i.e., defects that are smaller than a pixel in the detector array of the interferometer. The optical metrology device obtains optical metrology data at each pixel in at least one detector array and determines parameter values of a signal model for a pixel of interest using the optical metrology data received by a plurality of pixels neighboring a pixel of interest. A residual for the pixel of interest is determined using the optical metrology data received by the pixel of interest and determined parameter values for the signal model for the pixel of interest. A defect, which may be smaller than the pixel of interest can then be detected based on the residual for the pixel of interest.

    Correction of angular error of plane-of-incidence azimuth of optical metrology device

    公开(公告)号:US10296554B2

    公开(公告)日:2019-05-21

    申请号:US13831456

    申请日:2013-03-14

    IPC分类号: G06F17/16 G06F17/00 G03F7/20

    摘要: Optical metrology is used to calibrate the plane-of-incidence (POI) azimuth error by determining and correcting an azimuth angle offset. The azimuth angle offset may be determined by measuring at least a partial Mueller matrix from a calibration grating on a sample held on a stage for a plurality of POI azimuth angles. An axis of symmetry is determined for a curve describing a value of a Mueller matrix element with respect to POI azimuth angle, for each desired wavelength and each desired Mueller matrix element. The axis of symmetry may then be used to determine the azimuth angle offset, e.g., by determining a mean, median or average of all, or a filtered subset, of the axes of symmetry. If desired, an axis of symmetry may be determined for data sets other than Mueller matrix elements, such as Fourier coefficients of measured signals.

    Scanning white-light interferometry system for characterization of patterned semiconductor features

    公开(公告)号:US10288408B2

    公开(公告)日:2019-05-14

    申请号:US15388794

    申请日:2016-12-22

    摘要: A white light interferometric metrology device operates in the image plane and objective pupil plane. The interferometric metrology device extracts the electric field with complex parameters and that is a function of azimuth angle, angle of incidence and wavelength from interferometric data obtained from the pupil plane. Characteristics of the sample are determined using the electric field based on an electric field model of the azimuth angle, the angle of incidence and the wavelength that is specific for a zero diffraction order. A center of the pupil in the pupil plane may be determined based on a Fourier transform of the interferometric data at each new measurement and used to convert each pixel from the camera imaging the objective pupil plane into a unique set of angle of incidence and azimuth angle of light incident on the sample.

    Deconvolution to reduce the effective spot size of a spectroscopic optical metrology device

    公开(公告)号:US10274367B2

    公开(公告)日:2019-04-30

    申请号:US15966918

    申请日:2018-04-30

    摘要: The effective spot size of a spectroscopic metrology device is reduced through deconvolution of a measurement spectra set acquired from a measurement target combined with a training spectra set obtained from a training target. The measurement spectra set may be obtained using sparse sampling of a grid scan of a measurement target. The training spectra set is obtained from a grid scan of a training target that is similar to the measurement target. The training spectra set and the measurement spectra set include spectra from different grid nodes. Deconvolution of the measurement spectra and the training spectra sets produces an estimated spectrum for the measurement target that is an estimate of a spectrum from the measurement target produced with incident light having an effective spot size that is smaller than the actual spot size. One or more characteristics of the measurement target may then be determined using the estimated spectrum.

    Optical metrology using differential fitting

    公开(公告)号:US09995689B2

    公开(公告)日:2018-06-12

    申请号:US14720644

    申请日:2015-05-22

    发明人: Pedro Vagos

    摘要: Parameters of a sample are measured using a model-based approach that utilizes the difference between experimental spectra acquired from the sample and experimental anchor spectra acquired from one or more reference samples at the same optical metrology tool. Anchor parameters of the one or more reference samples are determined using one or more reference optical metrology tools. The anchor spectrum is obtained and the target spectrum for the sample is acquired using the optical metrology tool. A differential experimental spectrum is generated based on a difference between the target spectrum and the anchor spectrum. The parameters for the sample are determined using the differential experimental spectrum and the anchor parameters, e.g., by comparing the differential experimental spectrum to a differential simulated spectrum, which is based on a difference between spectra simulated using a model having the parameters and a spectrum simulated using a model having the anchor parameters.

    Deconvolution to reduce the effective spot size of a spectroscopic optical metrology device

    公开(公告)号:US09958327B2

    公开(公告)日:2018-05-01

    申请号:US14505373

    申请日:2014-10-02

    摘要: The effective spot size of a spectroscopic metrology device is reduced through deconvolution of a measurement spectra set acquired from a measurement target combined with a training spectra set obtained from a training target. The measurement spectra set may be obtained using sparse sampling of a grid scan of a measurement target. The training spectra set is obtained from a grid scan of a training target that is similar to the measurement target. The training spectra set and the measurement spectra set include spectra from different grid nodes. Deconvolution of the measurement spectra and the training spectra sets produces an estimated spectrum for the measurement target that is an estimate of a spectrum from the measurement target produced with incident light having an effective spot size that is smaller than the actual spot size. One or more characteristics of the measurement target may then be determined using the estimated spectrum.

    Optical critical dimension target design

    公开(公告)号:US09824176B2

    公开(公告)日:2017-11-21

    申请号:US14809061

    申请日:2015-07-24

    摘要: A measurement target for a semiconductor device is designed. The semiconductor device includes a structure to be measured that has a spectrum response that is comparable to or below system noise level for an optical critical dimension measurement device to be used to measure the structure. The measurement target is designed by obtaining a process window and design rules for the semiconductor device and determining prospective pitches through modeling to identify pitches that produce a spectrum response from the structures that is at least 10 times greater than a system noise level for the optical critical dimension measurement device. A resonance window for each prospective pitch is determined and robustness of the resonance window is determined through modeling. Pitches of the array are selected based on the prospective pitches, resonance windows, and robustness. The target design may accordingly be produced and used to generate a measurement target.