公开(公告)号：US20240194530A1

公开(公告)日：2024-06-13

申请号：US18515398

申请日：2023-11-21

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation ,  National University Corporation Tokai National Higher Education and Research System ,  HAMAMATSU PHOTONICS K.K.

Inventor： SHOSUKE NAKABAYASHI ,  MASATAKE NAGAYA ,  CHIAKI SASAOKA ,  ATSUSHI TANAKA ,  DAISUKE KAWAGUCHI ,  TOSHIKI YUI ,  KEISUKE HARA ,  TOMOMI ARATANI

IPC: H01L21/78

CPC classification number: H01L21/7813

Abstract: In a manufacturing method of a semiconductor device, a first deformation restriction layer and a second deformation restriction layer are formed on a first main surface and a second main surface of a semiconductor substrate, the first main surface being opposite to the second main surface, and the semiconductor substrate having a device structure formed adjacent to the first main surface. A laser beam is applied through the second deformation restriction layer on the second main surface of the semiconductor substrate so as to irradiate a plane extending at a predetermined depth inside of the semiconductor substrate with the laser beam. A device layer that is a part of the semiconductor substrate including the first main surface and the device structure from a remaining layer of the semiconductor substrate along the plane irradiated with the laser beam.

公开(公告)号：US20240186371A1

公开(公告)日：2024-06-06

申请号：US18505246

申请日：2023-11-09

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation

Inventor： Mariko HANASATO ,  Ryota SUZUKI

IPC: H01L29/06 ,  H01L29/10 ,  H01L29/78

CPC classification number: H01L29/0634 ,  H01L29/1095 ,  H01L29/7813

Abstract: A switching element includes a semiconductor substrate having inter-trench semiconductor layers each interposed between trenches and including a body region. The semiconductor substrate further includes deep regions and connection regions that connect the deep regions and the body region. The connection regions are arranged in rows. Intersection portions of the inter-trench semiconductor layers and the rows include connection intersection portions at which the connection regions are disposed and non-connection intersection portions at which the connection regions are not disposed. The connection intersection portions and the non-connection intersection portions are repeatedly arranged according to a reference pattern in which a number of the non-connection intersection portions interposed between adjacent two of the connection intersection portions is three or four, and a Manhattan distance of each of the non-connection intersection portions to closest one of the connection intersection portions is 1.

公开(公告)号：US20240063766A1

公开(公告)日：2024-02-22

申请号：US18448276

申请日：2023-08-11

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation

Inventor： SHOTARO WADA ,  TOMOHIRO NEZUKA ,  YOSHIKAZU FURUTA

IPC: H03F3/45

CPC classification number: H03F3/45475 ,  H03F2203/45116 ,  H03F2203/45528

Abstract: An amplifier circuit includes: an amplifier; a first switched resistor unit configured by connecting in series a first resistance element having one or more resistors and a first switch, and having one end connected to an input terminal of the amplifier; a second resistance element unit connected between an other end of the first switched resistor unit and an output terminal of the amplifier and including one or more resistors; a second switch connected between a common connection point of the first switched resistor unit and the second resistance element unit and a reset potential point; and a control circuit for exclusively turning on and off the first switch and the second switch, respectively.

公开(公告)号：US20240043012A1

公开(公告)日：2024-02-08

申请号：US18360419

申请日：2023-07-27

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation

Inventor： MITSUYASU ABE ,  KEISUKE KAWAI ,  SHIGERU KAMIO ,  HAIBO LIU

IPC: B60W40/068 ,  G06F30/15

CPC classification number: B60W40/068 ,  G06F30/15 ,  B60W2520/26 ,  B60W2552/00 ,  B60W2552/40

Abstract: A friction-coefficient-computing device includes: a computing unit that calculates a slip ratio and a friction coefficient; and a maximum-friction-estimating unit that calculates an estimated maximum value of the friction. The maximum-friction-estimating unit includes: a model calculator that calculates a tire model friction, which is a friction coefficient of a tire brush model; and a parameter-estimating unit that estimates values of parameters of a tire brush model expression. The parameter-estimating unit includes a parameter-restricting unit that eliminates values of the parameters that allow the tire brush model expression to be a linear function and a quadratic function, and obtains values of the parameters that allow an inclination of an inflection point of the tire brush model expression to approach zero.

公开(公告)号：US20240038834A1

公开(公告)日：2024-02-01

申请号：US18361030

申请日：2023-07-28

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation

Inventor： Hiromichi KIMPARA

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/0607 ,  H01L29/66734 ,  H01L29/7813 ,  H01L29/1608

Abstract: A method of manufacturing a semiconductor device includes: forming a lower layer of a repeating layer in which a first conductivity column and a second conductivity column are alternately arranged in a repeating direction by replacing a lower epitaxial layer for the first conductivity column with a region for the second conductivity column; and forming an upper layer of the repeating layer by replacing an upper epitaxial layer for the first conductivity column with a region for the second conductivity column. The second conductivity column includes a central portion and an end portion between the central portion and a boundary surface of the lower layer and the upper layer. A width of the end portion in the repeating direction is smaller than that of the central portion.

公开(公告)号：US11862477B2

公开(公告)日：2024-01-02

申请号：US17551274

申请日：2021-12-15

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation

Inventor： Shuhei Ichikawa ,  Hiroki Miyake

IPC: H01L21/00 ,  H01L21/425 ,  H01L29/24

CPC classification number: H01L21/425 ,  H01L29/24

Abstract: A method for manufacturing a semiconductor device having a gallium oxide-based semiconductor layer includes: ion-implanting dopant into a gallium oxide-based semiconductor layer while heating the gallium oxide-based semiconductor layer; and annealing the gallium oxide-based semiconductor layer under an oxygen atmosphere, after the ion-implanting.

公开(公告)号：US20230408261A1

公开(公告)日：2023-12-21

申请号：US18309225

申请日：2023-04-28

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation

Inventor： NOBUAKI MATSUDAIRA ,  HUI XU

IPC: G01C21/16 ,  G06T7/246 ,  G06V10/44

CPC classification number: G01C21/1656 ,  G06T7/246 ,  G06V10/44

Abstract: By a state estimation device or a state estimation method, image data is read, a feature point included in the image data is extracted, the feature point is tracked, a position, a velocity, or an attitude of a mobile object is calculated based on inertia data, a bias error of an inertial measurement unit is calculated, correction data is calculated by removing the bias error from the inertia data, and a state including at least one of the position, the velocity, or the attitude of the mobile object is estimated based on the correction data.

公开(公告)号：US20230388018A1

公开(公告)日：2023-11-30

申请号：US18187307

申请日：2023-03-21

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation

Inventor： Toshihiro ODA ,  Yuki KAMATA

IPC: H04B10/40

CPC classification number: H04B10/40

Abstract: An optical transceiver includes a plurality of light sources having a ring resonator, a reception antenna to receive light, and a wavelength-separating filter to separate, from the light received by the reception antenna, light of a same wavelength as the light output from a part of the plurality of light sources. The wavelength-separating filter is composed of the ring resonator included in the light source.

公开(公告)号：US11831471B2

公开(公告)日：2023-11-28

申请号：US17841030

申请日：2022-06-15

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation

Inventor： Shigeki Otsuka ,  Hyoungjun Na ,  Takasuke Ito ,  Yoshikazu Furuta ,  Tomohiro Nezuka

IPC: H04L25/02 ,  H04B3/56

CPC classification number: H04L25/0272 ,  H04B3/56 ,  H04L25/0278

Abstract: A differential communication circuit is connected to a communication line formed of a positive communication line and a negative communication line for differential communication. The differential communication circuit includes: a series circuit that includes a resistor element and a connection switch. The resistor element is connected between the positive and negative communication lines when the connection switch is turned on. The circuit also includes a transmission unit that is configured to output a differential signal to the communication line and a controller that is configured to change impedance of the communication line by turning on the connection switch in a period during which the transmission unit does not output the differential signal.

公开(公告)号：US20230369483A1

公开(公告)日：2023-11-16

申请号：US18183216

申请日：2023-03-14

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation

Inventor： Mariko HANASATO ,  Masato NOBORIO ,  Yohei IWAHASHI

IPC: H01L29/78 ,  H01L29/16 ,  H01L29/06 ,  H01L21/04 ,  H01L29/66

CPC classification number: H01L29/7811 ,  H01L29/1608 ,  H01L29/0623 ,  H01L29/7813 ,  H01L21/0465 ,  H01L29/66068

Abstract: A semiconductor device includes multiple connecting regions having a second conductivity type and disposed in a cell section and a boundary section. The connecting regions are located between bottom regions and a body region in a thickness direction of a semiconductor layer, in contact with the bottom regions and the body region, and repeatedly arranged at intervals at least in one direction so that a drift region is disposed between the connecting regions.