公开(公告)号：US5386126A

公开(公告)日：1995-01-31

申请号：US11010

申请日：1993-01-29

Applicant: Gregory H. Henderson ,  Lawrence C. West ,  Thomas K. Gaylord ,  Charles W. Roberts ,  Elias N. Glytsis ,  Moses T. Asom

Inventor： Gregory H. Henderson ,  Lawrence C. West ,  Thomas K. Gaylord ,  Charles W. Roberts ,  Elias N. Glytsis ,  Moses T. Asom

IPC: H01L33/06 ,  H01L33/10 ,  H01L33/14 ,  H01S5/34 ,  H01L29/161 ,  H01L27/12 ,  H01L27/14

CPC classification number: H01L33/06 ,  B82Y20/00 ,  H01L33/14 ,  H01S5/34 ,  H01S5/3401 ,  H01L33/105 ,  H01S5/3402 ,  H01S5/3415 ,  H01S5/3416 ,  H01S5/3419 ,  H01S5/3425 ,  Y10S977/712 ,  Y10S977/759 ,  Y10S977/761

Abstract: A solid state, electronic, optical transition device includes a multiple-layer structure of semiconductor material which supports substantially ballistic electron/hole transport at energies above/below the conduction/valance band edge. The multiple layer structure of semiconductor material includes a Fabry-Perot filter element for admitting electrons/holes at a first quasibound energy level above/below the conduction/valance band edge, and for depleting electrons/holes at a second quasibound energy level which is lower/higher than the first energy level. Such an arrangement allows common semiconductor material to be used to produce emitters and detectors and other devices which can operate at any of selected frequencies over a wide range of frequencies.

Abstract translation: 固体，电子，光学转换装置包括半导体材料的多层结构，其在高于/低于导电/价带边缘的能量下支撑基本上弹道的电子/空穴传输。 半导体材料的多层结构包括法布里 - 珀罗滤波器元件，用于在导电/价带边缘之上/之下的第一准能量级允许电子/空穴，并且用于在较低的第二准能级下耗尽电子/空穴 /高于第一能级。 这种布置允许常见的半导体材料用于产生发射器和检测器以及可在宽频率范围内以任何选定频率工作的其它器件。

公开(公告)号：US4303309A

公开(公告)日：1981-12-01

申请号：US59324

申请日：1979-07-20

Applicant: Lawrence C. West

Inventor： Lawrence C. West

IPC: G02F1/01 ,  G02F1/35 ,  G02B5/23

CPC classification number: G02F1/0126 ,  G02F1/3523

Abstract: Method and apparatus for the continuous high speed switching or modulation of light with light. A flow medium containing an active coupling medium is flowed relative to the light beams so as to continually restore the coupling medium which is degraded by interaction with the light beam, thereby maintaining the coupling medium in a desired condition for modulating a light beam. The problem of removal of heat generated by light power dissipation is eliminated by advective flow of the medium.

Abstract translation: 用于光连续高速切换或调制光的方法和装置。 包含有源耦合介质的流媒体相对于光束流动，以便连续地恢复由于与光束的相互作用而劣化的耦合介质，从而将耦合介质保持在用于调制光束的期望条件。 通过介质的平流流动消除了由光功率耗散产生的热量消除的问题。

公开(公告)号：US07869672B2

公开(公告)日：2011-01-11

申请号：US11771716

申请日：2007-06-29

Applicant: Andreas Goebel ,  Lawrence C. West ,  Gregory L. Wojcik

Inventor： Andreas Goebel ,  Lawrence C. West ,  Gregory L. Wojcik

IPC: G02B6/28 ,  G02B6/12 ,  G02B6/26 ,  G02B6/34 ,  G02B6/42 ,  G02B5/18 ,  H04J14/00 ,  H04J14/02

CPC classification number: G02B6/4246 ,  G02B6/2931 ,  G02B6/2938

Abstract: An optical assembly is formed with a silicon substrate having a first surface and a second surface confronting the first surface. A reflective coating is formed over the first surface. Multiple diffraction gratings are formed integrally within the second surface of the silicon substrate. An optical absorber is formed over the second surface between the diffraction gratings.

Abstract translation: 光学组件形成有具有与第一表面相对的第一表面和第二表面的硅衬底。 在第一表面上形成反射涂层。 多个衍射光栅一体地形成在硅衬底的第二表面内。 在衍射光栅之间的第二表面上形成光吸收体。

公开(公告)号：US07528357B2

公开(公告)日：2009-05-05

申请号：US11407376

申请日：2006-04-19

Applicant: Behzad Razavi ,  Lawrence C. West ,  Bryan D. Ackland

Inventor： Behzad Razavi ,  Lawrence C. West ,  Bryan D. Ackland

IPC: H03G3/20

CPC classification number: H01L27/144 ,  H03F3/08 ,  H03K5/1534 ,  H04B10/66

Abstract: A circuit including: an optical detector for detecting an optical pulse and generating therefrom a current pulse on an output; a pulse detector circuit having an input electrically connected to the optical detector and having an output for outputting a detection pulse in response to detecting the current pulse on its input, said pulse detector circuit including: a resettable amplifier including an input for receiving the current pulse from the optical detector, a reset terminal for resetting the amplifier after the amplifier detects the current pulse on its input, and an output for outputting a signal from which the detection pulse is derived; and a reset delay chain feeding back to the reset terminal of the resettable amplifier a feedback signal derived from the output signal of the resettable amplifier.

Abstract translation: 一种电路，包括：光检测器，用于检测光脉冲并产生输出上的电流脉冲; 脉冲检测器电路，其具有电连接到所述光学检测器的输入端，并具有用于响应于检测其输入上的电流脉冲而输出检测脉冲的输出，所述脉冲检测器电路包括：可复位放大器，包括用于接收电流脉冲的输入 来自光检测器的复位端子，用于在放大器检测到其输入上的电流脉冲之后复位放大器，以及用于输出用于输出检测脉冲的信号的输出; 以及复位延迟链，其将可重置放大器的输出信号导出的反馈信号反馈到可复位放大器的复位端。

公开(公告)号：US20080124084A1

公开(公告)日：2008-05-29

申请号：US11771716

申请日：2007-06-29

Applicant: Andreas Goebel ,  Lawrence C. West ,  Gregory L. Wojcik

Inventor： Andreas Goebel ,  Lawrence C. West ,  Gregory L. Wojcik

IPC: H04J14/02

CPC classification number: G02B6/4246 ,  G02B6/2931 ,  G02B6/2938

Abstract: An optical assembly is formed with a silicon substrate having a first surface and a second surface confronting the first surface. A reflective coating is formed over the first surface. Multiple diffraction gratings are formed integrally within the second surface of the silicon substrate. An optical absorber is formed over the second surface between the diffraction gratings.

Abstract translation: 光学组件形成有具有与第一表面相对的第一表面和第二表面的硅衬底。 在第一表面上形成反射涂层。 多个衍射光栅一体地形成在硅衬底的第二表面内。 在衍射光栅之间的第二表面上形成光吸收体。

公开(公告)号：US07151881B2

公开(公告)日：2006-12-19

申请号：US10856127

申请日：2004-05-28

Applicant: Lawrence C. West ,  Thomas P. Pearsall ,  Francisco A. Leon ,  Stephen Moffatt

Inventor： Lawrence C. West ,  Thomas P. Pearsall ,  Francisco A. Leon ,  Stephen Moffatt

IPC: G02B6/10

CPC classification number: G02B6/42 ,  G02B6/136 ,  G02B2006/12123 ,  H01L31/02327 ,  H01L31/0312 ,  H01L31/09 ,  H01L31/105 ,  H01L31/1105 ,  H01L31/1812 ,  Y02E10/50

Abstract: An optical circuit including a semiconductor substrate; an optical waveguide formed in or on the substrate; and an optical detector formed in or on the semiconductor substrate, wherein the optical detector is aligned with the optical waveguide so as to receive an optical signal from the optical waveguide during operation, and wherein the optical detector has: a first electrode; a second electrode; and an intermediate layer between the first and second electrodes, the intermediate layer being made of a semiconductor material characterized by a conduction band, a valence band, and deep level energy states introduced between the conduction and valence bands.

Abstract translation: 一种包括半导体衬底的光学电路; 形成在基板中或基板上的光波导; 以及形成在所述半导体衬底中或之上的光学检测器，其中所述光学检测器与所述光波导对准，以便在操作期间从所述光波导接收光信号，并且其中所述光学检测器具有：第一电极; 第二电极; 以及在所述第一和第二电极之间的中间层，所述中间层由导电带和导带之间引入的导带，价带和深能级状态的半导体材料制成。

公开(公告)号：US07075165B2

公开(公告)日：2006-07-11

申请号：US10856750

申请日：2004-05-28

Applicant: Francisco A. Leon ,  Lawrence C. West ,  Yuichi Wada ,  Gregory L. Wojcik ,  Stephen Moffatt

Inventor： Francisco A. Leon ,  Lawrence C. West ,  Yuichi Wada ,  Gregory L. Wojcik ,  Stephen Moffatt

IPC: H01L31/075

CPC classification number: G02B6/12004 ,  G02B2006/12061 ,  H01L31/0232 ,  H01L31/0288 ,  H01L31/105 ,  H01L31/1812 ,  Y02E10/50

Abstract: A method of fabricating a detector that involves: forming a trench in a substrate, the substrate having an upper surface; forming a first doped semiconductor layer on the substrate and in the trench; forming a second semiconductor layer on the first doped semiconductor layer and extending into the trench, the second semiconductor layer having a conductivity that is less than the conductivity of the first doped semiconductor layer; forming a third doped semiconductor layer on the second semiconductor layer and extending into the trench; removing portions of the first, second and third layers that are above a plane defined by the surface of the substrate to produce an upper, substantially planar surface and expose an upper end of the first doped semiconductor layer in the trench; forming a first electrical contact to the first semiconductor doped layer; and forming a second electrical contact to the third semiconductor doped layer.

Abstract translation: 一种制造检测器的方法，包括：在衬底中形成沟槽，所述衬底具有上表面; 在所述衬底和所述沟槽中形成第一掺杂半导体层; 在所述第一掺杂半导体层上形成第二半导体层并延伸到所述沟槽中，所述第二半导体层的导电率小于所述第一掺杂半导体层的导电性; 在所述第二半导体层上形成第三掺杂半导体层并延伸到所述沟槽中; 去除在由衬底的表面限定的平面之上的第一层，第二层和第三层的部分，以产生上部基本平坦的表面，并且暴露沟槽中的第一掺杂半导体层的上端; 形成第一电接触到第一半导体掺杂层; 以及向所述第三半导体掺杂层形成第二电接触。

公开(公告)号：US07001788B2

公开(公告)日：2006-02-21

申请号：US10858524

申请日：2004-05-28

Applicant: Francisco A. Leon ,  Lawrence C. West ,  Gregory L. Wojcik ,  Yuichi Wada

Inventor： Francisco A. Leon ,  Lawrence C. West ,  Gregory L. Wojcik ,  Yuichi Wada

IPC: H01L21/00

CPC classification number: G02B6/12004 ,  G02B6/122 ,  G02B6/132 ,  G02B6/136 ,  G02B2006/121 ,  G02B2006/12104

Abstract: A method of fabricating a waveguide mirror that involves etching a trench in a silicon substrate; depositing a film (e.g. silicon dioxide) over the surface of the silicon substrate and into the trench; ion etching the film to remove at least some of the deposited silicon dioxide and to leave a facet of film in inside corners of the trench; depositing a layer of SiGe over the substrate to fill up the trench; and planarizing the deposited SiGe to remove the SiGe from above the level of the trench.

Abstract translation: 一种制造波导反射镜的方法，涉及蚀刻硅衬底中的沟槽; 在硅衬底的表面上沉积膜（例如二氧化硅）并进入沟槽; 离子蚀刻膜以去除沉积的二氧化硅中的至少一些并且在沟槽的内部角落留下膜的小面; 在衬底上沉积一层SiGe以填充沟槽; 并且平坦化沉积的SiGe以从沟槽的高度上方除去SiGe。