Hardmask compositions for resist underlayer films
    23.
    发明申请
    Hardmask compositions for resist underlayer films 有权
    用于抗蚀剂底层膜的硬掩模组合物

    公开(公告)号:US20070148974A1

    公开(公告)日:2007-06-28

    申请号:US11508074

    申请日:2006-08-22

    IPC分类号: C23F1/00 H01L21/302

    CPC分类号: H01L21/0273 G03F7/11

    摘要: Provided herein are hardmask compositions for resist underlayer films, wherein according to some embodiments of the invention, hardmask compositions include a polymer prepared by the reaction of a compound of Formula 1 with a compound of Formula 2 (R)m—Si—(OCH3)4-m   (2) in the presence of a catalyst, wherein R is a monovalent organic group, n is an integer from 3 to 20, and m is 1 or 2; and an organic solvent.Also provided herein are methods for producing a semiconductor integrated circuit device using a hardmask composition according to an embodiment of the invention. Further provided are semiconductor integrated circuit devices produced by a method embodiment of the invention.

    摘要翻译: 本文提供了用于抗蚀剂下层膜的硬掩模组合物,其中根据本发明的一些实施方案,硬掩模组合物包括通过式1的化合物与式2化合物的反应制备的聚合物, (2)(2)式(2)所示的化合物,其中R 1,R 2,R 3, 在存在催化剂的情况下,<?in-line-formula description =“In-line Formulas”end =“tail”?>,其中R为一价有机基团,n为3至20的整数,m为1 或2; 和有机溶剂。 本文还提供了使用根据本发明实施例的硬掩模组合物制造半导体集成电路器件的方法。 还提供了通过本发明的方法实施例生产的半导体集成电路器件。

    Hardmask compositions for resist underlayer film and method for producing semiconductor integrated circuit device using the same
    24.
    发明申请
    Hardmask compositions for resist underlayer film and method for producing semiconductor integrated circuit device using the same 有权
    用于抗蚀剂下层膜的硬掩模组合物和使用其的半导体集成电路器件的制造方法

    公开(公告)号:US20070148586A1

    公开(公告)日:2007-06-28

    申请号:US11507701

    申请日:2006-08-22

    IPC分类号: G03C1/00

    摘要: Provided herein are hardmask compositions for resist underlayer films, wherein in some embodiments, the hardmask compositions include(a) a first polymer prepared by the reaction of a compound of Formula 1 wherein n is a number of 3 to 20, with a compound of Formula 2 (R)m—Si—(OCH3)4-m   (2) wherein R is a monovalent organic group and m is 0, 1 or 2;(b) a second polymer that includes at least one of the structures represented by Formulae 3-6;(c) an acid or base catalyst; and(d) an organic solvent.Further provided herein are methods for producing a semiconductor integrated circuit device using a hardmask composition according to an embodiment of the present invention.In addition, provided herein are semiconductor integrated circiut devices produced by a method embodiment of the invention.

    摘要翻译: 本文提供了用于抗蚀剂下层膜的硬掩模组合物,其中在一些实施方案中,硬掩模组合物包括(a)通过其中n为3至20数的式1化合物与式1化合物的反应制备的第一聚合物 2 <?in-line-formula description =“In-line Formulas”end =“lead”?(R) -Si-(OCH 3 3)其中R是一价有机基团,m是0,1或2; (b)第二聚合物,其包含由式3-6表示的至少一种结构; (c)酸或碱催化剂; 和(d)有机溶剂。 本文还提供了使用根据本发明实施例的硬掩模组合物制造半导体集成电路器件的方法。 此外,本发明提供了通过本发明的方法实施例制造的半导体集成循环装置。