Abstract:
In a semiconductor device including a semiconductor body, a continuous oxide layer, a continuous metallization layer, and a diffusion zone, the diffusion zone is located below a portion of the continuous oxide layer to reduce this portion in thickness, and the corresponding part of the metallization layer in the region of the oxide layer portion of reduced thickness forms an undulation which protects the metallization layer against thermal stresses.
Abstract:
An electronic circuit device having a monolithic integrated power transistor is disclosed that comprises a parallel connection of a plurality of individual partial transistors (1, 2, 3, . . . , n). In order to stabilize the distribution of the sum current to the individual partial transistors (1, 2, 3, . . . , n) resistors (41, 42, 43, . . . 4n) are provided in their emitter lines. At least one of the resistors (41, 42, 43, . . . 4n) in the emitter lines of the partial transistors (1, 2, 3, . . . , n) serves as measurement resistor for producing a signal voltage proportional to the current to provide an electronic circuit device having current regulation or current limiting, as shown in FIG. 2.
Abstract:
A monolithically integrated, polarity-reversal protected switching circuit includes, in the output of a switching stage, a symmetrical thyristor instead of an otherwise customary diode. This thyristor is constituted by an npn transistor and a lateral pnp transistor. The control input of the thyristor is controlled by an additional control arrangement in such a manner that the thyristor is switched off at the occurrence of high voltage peaks. In this manner, there is obtained a relatively inexpensive monolithically integrated switching arrangement which is protected against polarity reversal and withstands voltage pulses of up to 150 volts.
Abstract:
A process for introducing one or more threads into a texturizing nozzle, in which the texturizing nozzle, together with the inlet member, is first brought into a position in which the thread is led transversely past and in the immediate vicinity of the texturizing nozzle, the thread is sucked against the nozzle with the orifice of the inlet member enlarged, immediately after being sucked against the texturizing nozzle the thread is cut beyond the nozzle so that the cut end is sucked back into the nozzle, the suction supply required for the sucking-in is replaced by pressurized fluid texturizing medium, and the cross-section of the inlet orifice of the texturizing device is reduced to a value advantageous for steady state operation.An apparatus for carrying out the above process, comprising a pivotable texturizing nozzle with an inlet member of variable cross-section, and a suction device which permits the pressure to be reduced, relative to atmospheric pressure, at the inlet member of the texturizing nozzle, is also disclosed.
Abstract:
To detect defective elements in a composite semiconductor unit, such as a plurality of transistors, diodes, or the like, connected together to provide desired output levels, the elements are arranged in the unit, for example by providing coupling resistors, or melt positions in the connections to the respective units so that defective elements in the unit can be recognized and isolated from the remaining, non-defective elements in the unit, so that, overall, a semiconductor unit results which is operative and from which defective sub-elements have been, electrically, removed. The defective elements are recognized by applying a voltage to an electrode pair which is below the normal breakdown voltage between the pair of electrodes, then determining the total blocked current flow to the unit and, if the blocked current flow is not at design level, individually measuring the electrical characteristics of the elements until the defective element is identified, whereupon a current pulse is applied thereto in order to electrically isolate the specific element from the unit.
Abstract:
A controlled main switch, typically a semiconductor switch, is connected in parallel to the load. In accordance with the invention, an auxiliary switch, typically also a semiconductor switch such as a switching transistor is directly connected across the terminals of the load, and with an impedance, for example a resistance, diode, or Zener diode to the main switch, and controlled to switch in synchronism with the main switch, so that the residual voltage across the load due to inherent voltage drop across the terminals of the switch becomes a minimum. Integrated technology may be used, combining preamplifiers and distribution networks in one monolithic chip.
Abstract:
A monolithically integrated circuit in the packed state has at least one characteristic value and/or at least one function which is able to be varied by applying at least one striking potential to at least two of the standard terminal connections leading to the outside of the integrated circuit.
Abstract:
A high-frequency power transistor is suggested in which the emitter and base contacts, as well as the collector contacts, occur in a principle plane on the silicon layer. A metallization can be arranged on the oppositely located second principle plane, which enables a connection with the heat sink in an easy manner. Shield grids can be provided within the substrate in order to compensate for the effect of unwanted depletion-layer diodes to a great extent.
Abstract:
A multiple-cell transistor consists of a parallel connection of individual transistor cells (41, 42) for power distribution. Fuse links (6, 7), which separate the defective transistor cells from the compound in the event of a short circuit, are provided for the purpose of automatically separating defective transistor cells. A voltage-controlled switch (9) is provided for improved separation of the base fuse link (7).
Abstract:
A process for introducing one or more threads into a texturizing nozzle, in which the texturizing nozzle, together with the inlet member, is first brought into a position in which the thread is led transversely past and in the immediate vicinity of the texturizing nozzle, the thread is sucked against the nozzle with the orifice of the inlet member enlarged, immediately after being sucked against the texturizing nozzle the thread is cut beyond the nozzle so that the cut end is sucked back into the nozzle, the suction supply required for the sucking-in is replaced by pressurized fluid texturizing medium, and the cross-section of the inlet orifice of the texturizing device is reduced to a value advantageous for steady state operation.An apparatus for carrying out the above process, comprising a pivotable texturizing nozzle with an inlet member of variable cross-section, and a suction device which permits the pressure to be reduced, relative to atmospheric pressure, at the inlet member of the texturizing nozzle, is also disclosed.