Method of making metallization for semiconductor device
    21.
    发明授权
    Method of making metallization for semiconductor device 失效
    半导体器件金属化方法

    公开(公告)号:US5298462A

    公开(公告)日:1994-03-29

    申请号:US756833

    申请日:1991-09-09

    CPC classification number: H01L23/5283 H01L2924/0002 Y10S438/927 Y10S438/981

    Abstract: In a semiconductor device including a semiconductor body, a continuous oxide layer, a continuous metallization layer, and a diffusion zone, the diffusion zone is located below a portion of the continuous oxide layer to reduce this portion in thickness, and the corresponding part of the metallization layer in the region of the oxide layer portion of reduced thickness forms an undulation which protects the metallization layer against thermal stresses.

    Abstract translation: 在包括半导体本体,连续氧化物层,连续金属化层和扩散区的半导体器件中,扩散区位于连续氧化物层的一部分的下方以减小该厚度部分,并且相应部分 在减小厚度的氧化物层部分的区域中的金属化层形成波纹,其保护金属化层免受热应力。

    Electronic circuit device
    22.
    发明授权
    Electronic circuit device 失效
    电子电路设备

    公开(公告)号:US5068703A

    公开(公告)日:1991-11-26

    申请号:US477881

    申请日:1990-04-12

    CPC classification number: H03K17/12 H01L29/7304

    Abstract: An electronic circuit device having a monolithic integrated power transistor is disclosed that comprises a parallel connection of a plurality of individual partial transistors (1, 2, 3, . . . , n). In order to stabilize the distribution of the sum current to the individual partial transistors (1, 2, 3, . . . , n) resistors (41, 42, 43, . . . 4n) are provided in their emitter lines. At least one of the resistors (41, 42, 43, . . . 4n) in the emitter lines of the partial transistors (1, 2, 3, . . . , n) serves as measurement resistor for producing a signal voltage proportional to the current to provide an electronic circuit device having current regulation or current limiting, as shown in FIG. 2.

    Abstract translation: PCT No.PCT / DE88 / 00034 Sec。 371日期1990年04月12日 102(e)日期1990年4月12日PCT 1989年1月21日PCT PCT。 公开号WO89 / 07341 公开了具有单片集成功率晶体管的电子电路装置,其包括多个单独部分晶体管(1,2,3,...,n)的并联连接。 为了稳定电流到各个部分晶体管(1,2,3,...,n)的电流分布,在它们的发射极线上设置有电阻(41,42,43 ...,4n)。 部分晶体管(1,2,3,...,n)的发射极线中的至少一个电阻器(41,42,43,... 4n)用作测量电阻器,用于产生与 提供具有电流调节或电流限制的电子电路装置的电流,如图1所示。 2。

    Monolithically integrated, polarity-reversal protected circuit
    23.
    发明授权
    Monolithically integrated, polarity-reversal protected circuit 失效
    单片集成,极性反转保护电路

    公开(公告)号:US4689711A

    公开(公告)日:1987-08-25

    申请号:US797144

    申请日:1985-11-04

    CPC classification number: H03K17/08146 H02H11/002 Y10T307/258

    Abstract: A monolithically integrated, polarity-reversal protected switching circuit includes, in the output of a switching stage, a symmetrical thyristor instead of an otherwise customary diode. This thyristor is constituted by an npn transistor and a lateral pnp transistor. The control input of the thyristor is controlled by an additional control arrangement in such a manner that the thyristor is switched off at the occurrence of high voltage peaks. In this manner, there is obtained a relatively inexpensive monolithically integrated switching arrangement which is protected against polarity reversal and withstands voltage pulses of up to 150 volts.

    Abstract translation: 单片集成的极性反转保护的开关电路在开关级的输出中包括对称的可控硅,而不是其它常规的二极管。 该晶闸管由npn晶体管和横向pnp晶体管构成。 晶闸管的控制输入由附加的控制装置控制,使得在出现高电压峰值时关断晶闸管。 以这种方式,获得了相对便宜的单片集成开关装置,其被保护以防止极性反转并承受高达150伏特的电压脉冲。

    Apparatus for threading up a rapidly travelling thread in a texturizing
nozzle
    24.
    发明授权
    Apparatus for threading up a rapidly travelling thread in a texturizing nozzle 失效
    用于在纹理化喷嘴中穿过快速移动的螺纹的装置

    公开(公告)号:US4424614A

    公开(公告)日:1984-01-10

    申请号:US305043

    申请日:1981-09-23

    CPC classification number: D02G1/16

    Abstract: A process for introducing one or more threads into a texturizing nozzle, in which the texturizing nozzle, together with the inlet member, is first brought into a position in which the thread is led transversely past and in the immediate vicinity of the texturizing nozzle, the thread is sucked against the nozzle with the orifice of the inlet member enlarged, immediately after being sucked against the texturizing nozzle the thread is cut beyond the nozzle so that the cut end is sucked back into the nozzle, the suction supply required for the sucking-in is replaced by pressurized fluid texturizing medium, and the cross-section of the inlet orifice of the texturizing device is reduced to a value advantageous for steady state operation.An apparatus for carrying out the above process, comprising a pivotable texturizing nozzle with an inlet member of variable cross-section, and a suction device which permits the pressure to be reduced, relative to atmospheric pressure, at the inlet member of the texturizing nozzle, is also disclosed.

    Abstract translation: 用于将一个或多个线引入到纹理化喷嘴中的过程,其中,该纹理化喷嘴与入口构件一起被首先进入到该线被横向穿过并且紧靠该纹理化喷嘴的位置, 螺纹被吸入喷嘴,入口部件的孔口被增大,在被抽吸到组织化喷嘴之后立即将螺纹切割出喷嘴,使得切割端被吸回到喷嘴中, in被加压流体纹理化介质代替,并且将整流装置的入口孔的横截面减小到有利于稳态操作的值。 一种用于执行上述过程的装置,包括具有可变横截面的入口构件的可枢转的纹理化喷嘴和允许相对于大气压降低压力的抽吸装置,在该构造喷嘴的入口构件处, 也被披露。

    Composite semiconductor unit and method
    25.
    发明授权
    Composite semiconductor unit and method 失效
    复合半导体单元和方法

    公开(公告)号:US4038677A

    公开(公告)日:1977-07-26

    申请号:US548068

    申请日:1975-02-07

    Abstract: To detect defective elements in a composite semiconductor unit, such as a plurality of transistors, diodes, or the like, connected together to provide desired output levels, the elements are arranged in the unit, for example by providing coupling resistors, or melt positions in the connections to the respective units so that defective elements in the unit can be recognized and isolated from the remaining, non-defective elements in the unit, so that, overall, a semiconductor unit results which is operative and from which defective sub-elements have been, electrically, removed. The defective elements are recognized by applying a voltage to an electrode pair which is below the normal breakdown voltage between the pair of electrodes, then determining the total blocked current flow to the unit and, if the blocked current flow is not at design level, individually measuring the electrical characteristics of the elements until the defective element is identified, whereupon a current pulse is applied thereto in order to electrically isolate the specific element from the unit.

    High-frequency power transistor
    28.
    发明授权
    High-frequency power transistor 失效
    高频功率晶体管

    公开(公告)号:US5032886A

    公开(公告)日:1991-07-16

    申请号:US335785

    申请日:1989-03-27

    Abstract: A high-frequency power transistor is suggested in which the emitter and base contacts, as well as the collector contacts, occur in a principle plane on the silicon layer. A metallization can be arranged on the oppositely located second principle plane, which enables a connection with the heat sink in an easy manner. Shield grids can be provided within the substrate in order to compensate for the effect of unwanted depletion-layer diodes to a great extent.

    Abstract translation: PCT No.PCT / DE87 / 00397 Sec。 371日期:1989年3月27日 102(e)日期1989年3月27日PCT提交1987年9月2日PCT公布。 出版物WO88 / 02554 日期:1988年4月7日。提出了一种高频功率晶体管,其中发射极和基极接触以及集电极触点发生在硅层上的主平面中。 金属化可以布置在相对位置的第二主平面上,这使得能够以容易的方式与散热器连接。 可以在衬底内提供屏蔽栅,以便在很大程度上补偿不需要的耗尽层二极管的影响。

    Multiple-cell transistor with base and emitter fuse links
    29.
    发明授权
    Multiple-cell transistor with base and emitter fuse links 失效
    具有基极和发射极熔断体的多单元晶体管

    公开(公告)号:US4742425A

    公开(公告)日:1988-05-03

    申请号:US50294

    申请日:1987-05-05

    CPC classification number: H01L23/5256 H01L23/62 H01L2924/0002

    Abstract: A multiple-cell transistor consists of a parallel connection of individual transistor cells (41, 42) for power distribution. Fuse links (6, 7), which separate the defective transistor cells from the compound in the event of a short circuit, are provided for the purpose of automatically separating defective transistor cells. A voltage-controlled switch (9) is provided for improved separation of the base fuse link (7).

    Abstract translation: PCT No.PCT / DE86 / 00327 Sec。 371日期:1987年5月5日 102(e)日期1987年5月5日PCT提交1986年8月25日PCT公布。 出版物WO87 / 01867 日期:1987年3月26日。多单元晶体管由用于功率分配的单独晶体管​​单元(41,42)的并联连接构成。 提供了在发生短路的情况下将缺陷晶体管电池与化合物分离的保险丝链路(6,7),用于自动分离有缺陷的晶体管单元。 提供了一种电压控制开关(9),用于改善基极熔断体(7)的分离。

    Apparatus for threading up a texturizing nozzle
    30.
    发明授权
    Apparatus for threading up a texturizing nozzle 失效
    用于穿透纹理化喷嘴的装置

    公开(公告)号:US4280260A

    公开(公告)日:1981-07-28

    申请号:US25173

    申请日:1979-03-29

    CPC classification number: D02G1/16

    Abstract: A process for introducing one or more threads into a texturizing nozzle, in which the texturizing nozzle, together with the inlet member, is first brought into a position in which the thread is led transversely past and in the immediate vicinity of the texturizing nozzle, the thread is sucked against the nozzle with the orifice of the inlet member enlarged, immediately after being sucked against the texturizing nozzle the thread is cut beyond the nozzle so that the cut end is sucked back into the nozzle, the suction supply required for the sucking-in is replaced by pressurized fluid texturizing medium, and the cross-section of the inlet orifice of the texturizing device is reduced to a value advantageous for steady state operation.An apparatus for carrying out the above process, comprising a pivotable texturizing nozzle with an inlet member of variable cross-section, and a suction device which permits the pressure to be reduced, relative to atmospheric pressure, at the inlet member of the texturizing nozzle, is also disclosed.

    Abstract translation: 用于将一个或多个线引入到纹理化喷嘴中的过程,其中,该纹理化喷嘴与入口构件一起被首先进入到该线被横向穿过并且紧靠该纹理化喷嘴的位置, 螺纹被吸入喷嘴,入口部件的孔口被增大,在被抽吸到组织化喷嘴之后立即将螺纹切割出喷嘴,使得切割端被吸回到喷嘴中, in被加压流体纹理化介质代替,并且将整流装置的入口孔的横截面减小到有利于稳态操作的值。 一种用于执行上述过程的装置,包括具有可变横截面的入口构件的可枢转的纹理化喷嘴和允许相对于大气压降低压力的抽吸装置,在该构造喷嘴的入口构件处, 也被披露。

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