-
281.发明公开公开(公告)号：US20230268434A1
公开(公告)日：2023-08-24
申请号：US18153554
申请日：2023-01-12
Inventor： Kazuki IKEYAMA
IPC: H01L29/78 , H01L21/266 , H01L29/20
CPC classification number: H01L29/7813 , H01L21/266 , H01L29/2003
Abstract: A nitride semiconductor device includes a drift region, a body region, a source region, an insulated gate, and a source electrode. The drift region has a first conductivity type and is made of a nitride semiconductor. The body region has a second conductivity type, is made of a nitride semiconductor, and is disposed on the drift region. The source region has the first conductivity type and is separated from the drift region by the body region. The insulated gate faces a portion of the body region that is located between the drift region and the source region. The source electrode is electrically connected to the body region and the source region. The source region is made of a deposited film.
-
公开(公告)号：US20230268230A1
公开(公告)日：2023-08-24
申请号：US18158612
申请日：2023-01-24
Inventor： FUMIHITO TACHIBANA , MASASHI UECHA , YUJI NAGUMO
IPC: H01L21/784 , H01L21/304 , H01L21/3065 , H01L21/56 , H01L21/02
CPC classification number: H01L21/784 , H01L21/02164 , H01L21/304 , H01L21/3065 , H01L21/56
Abstract: In a manufacturing method of a semiconductor device, a wafer in which multiple semiconductor elements is formed and having a first surface and a second surface opposite to each other is prepared, and a groove is formed on the first surface of the wafer along a boundary between adjacent semiconductor elements in the multiple semiconductor elements. The wafer is attached to a support plate in such a manner that the first surface of the wafer faces the support plate, and a scribing blade is pressed against the second surface of the wafer along the boundary to form a vertical crack inside the wafer along the boundary. Then, a breaking blade is pressed against the wafer along the boundary to cleave the wafer along the boundary.
-
公开(公告)号：US11736830B2
公开(公告)日：2023-08-22
申请号：US17954415
申请日：2022-09-28
Inventor： Hiroki Sasaki
IPC: H04N25/709 , H04N25/707 , H04N25/766 , H04N25/47
CPC classification number: H04N25/709 , H04N25/707 , H04N25/766
Abstract: A solid-state imaging element includes a pixel and an image processing unit. The pixel has a common transistor, a charge accumulation unit, and a power supply. The common transistor has a first terminal and a second terminal. The common transistor maintains a voltage of the first terminal at a predetermined voltage with a voltage applied from the power supply and outputs a voltage corresponding to a change in a voltage of the charge accumulation unit from the second terminal, based on a condition that an element voltage is a ground voltage. The common transistor outputs a voltage corresponding to a change in a voltage of the charge accumulation unit from the first terminal, based on the element voltage is higher than the ground voltage. The image processing unit generates a luminance image according to a change in the voltage output from the second terminal of the common transistor.
-
公开(公告)号：US11733044B2
公开(公告)日：2023-08-22
申请号：US17730284
申请日：2022-04-27
Inventor： Yuuki Inagaki , Yusuke Kawai , Takahiko Yoshida , Shota Harada , Katsuaki Goto , Keitaro Ito
IPC: G01C19/5712
CPC classification number: G01C19/5712
Abstract: An inertial sensor includes a lower substrate and an upper substrate. The upper substrate includes a micro oscillator, electrodes and a pad, which are independent of each other. The micro oscillator includes a curved surface portion, a joint portion recessed inward from an apex of the curved surface portion and joined to a support portion of the lower substrate, a rim at an end of the curved surface portion and a conductive film covering the micro oscillator. The curved surface portion is in an aerial state. The rim is made of the same material as the electrodes, located on a virtual flat plane formed by the electrodes, and apart from and surrounded by the electrodes. A portion of the conductive film that covers the joint portion is electrically bonded to a lower metal film covering the support portion.
-
285.发明公开公开(公告)号：US20230230829A1
公开(公告)日：2023-07-20
申请号：US18147764
申请日：2022-12-29
Applicant: DENSO CORPORATION , TOYOTA JIDOSHA KABUSHIKI KAISHA , MIRISE Technologies Corporation , National University Corporation Tokai National Higher Education and Research System , HAMAMATSU PHOTONICS K.K.
Inventor： SHOSUKE NAKABAYASHI , JUNJI OHARA , MASATAKE NAGAYA , CHIAKI SASAOKA , SHOICHI ONDA , JUN KOJIMA , DAISUKE KAWAGUCHI , RYUJI SUGIURA , TOSHIKI YUI , KEISUKE HARA
IPC: H01L21/02
CPC classification number: H01L21/0201
Abstract: A method of manufacturing a semiconductor element includes formation of a modified layer, detection of a first region, and cutting of a semiconductor wafer. In the formation of the modified layer, a laser is irradiated on the semiconductor wafer to form the modified layer extending along a surface of the semiconductor wafer inside the semiconductor wafer. The surface of the semiconductor wafer includes a peripheral portion having the first region and a second region. The first region is a region in which the modified layer is not located, and the second region is a region in which the modified layer is formed. In the cutting of the semiconductor wafer, the semiconductor wafer is cut at the modified layer starting from the second region.
-
Patent Agency Ranking
公开(公告)号：US11699600B2
公开(公告)日：2023-07-11
申请号：US17522067
申请日：2021-11-09
Applicant: DENSO CORPORATION , TOYOTA JIDOSHA KABUSHIKI KAISHA , MIRISE Technologies Corporation , National University Corporation Kyoto Institute of Technology
Inventor： Tatsuji Nagaoka , Hiroki Miyake , Hiroyuki Nishinaka , Yuki Kajita , Masahiro Yoshimoto
IPC: H01L21/67 , H01L21/02 , H01L21/306
CPC classification number: H01L21/67023 , H01L21/02623 , H01L21/30604
Abstract: A wafer processing apparatus is configured to process a wafer by supplying mist to a surface of the wafer. The wafer processing apparatus includes a furnace in which the wafer is disposed, a gas supplying device configured to supply gas into the furnace, a mist supplying device configured to supply the mist into the furnace, and a controller. The controller is configured to execute a processing step by controlling the gas supplying device and the mist supplying device to supply the gas and the mist into the furnace, respectively. The controller is further configured to control the mist supplying device to stop supplying the mist into the furnace while controlling the gas supplying device to keep supplying the gas into the furnace when the processing step ends.
-
公开(公告)号：US20230210012A1
公开(公告)日：2023-06-29
申请号：US17972673
申请日：2022-10-25
Applicant: DENSO CORPORATION , TOYOTA JIDOSHA KABUSHIKI KAISHA , MIRISE Technologies Corporation , Nisshinbo Micro Devices Inc.
Inventor： YUYA SAKURAI , HIDEO YAMADA , MEGUMI SUZUKI , TETSUYA ENOMOTO , AKIHIKO TESHIGAHARA , TAKAHIDE USUI , NAOKATSU IKEGAMI , SHUJI KATAKAMI
IPC: H01L41/18 , H01L41/08 , H01L41/047 , H01L41/22
CPC classification number: H01L41/18 , H01L41/0805 , H01L41/0477 , H01L41/22
Abstract: A piezoelectric device includes a base member, a first conductive film arranged above the base member in contact with an upper surface of the base member, a piezoelectric film arranged above the first conductive film in contact with an upper surface of the first conductive film, a second conductive film arranged on the piezoelectric film, and an insulating portion provided inside a trench penetrating through the piezoelectric film and the first conductive film. The insulating portion has a higher electrical resistivity than the piezoelectric film.
-
公开(公告)号：US20230207423A1
公开(公告)日：2023-06-29
申请号：US17980890
申请日：2022-11-04
Inventor： SHINYA ITO
IPC: H01L23/427
CPC classification number: H01L23/427
Abstract: A radiator module includes a heat pipe and a terminal. The heat pipe includes a first plate and a second plate between which a refrigerant channel is defined, and a support member extending from the first plate to the second plate. The terminal is joined to a connection body of the first plate and the support member from outside of the heat pipe. The support member is located within a range that overlaps a joint portion of the terminal and the connection body when viewed in a thickness direction of the first plate.
-
公开(公告)号：US20230203662A1
公开(公告)日：2023-06-29
申请号：US18065740
申请日：2022-12-14
Applicant: DENSO CORPORATION , TOYOTA JIDOSHA KABUSHIKI KAISHA , MIRISE Technologies Corporation , National University Corporation Kyoto Institute of Technology
Inventor： TATSUJI NAGAOKA , HIROYUKI NISHINAKA , MASAHIRO YOSHIMOTO
IPC: C23C16/54 , C23C16/52 , C23C16/44 , C23C16/448 , C23C16/48
CPC classification number: C23C16/54 , C23C16/52 , C23C16/4412 , C23C16/4481 , C23C16/4486 , C23C16/481
Abstract: A film formation apparatus includes a stage for having a substrate thereon; a mist generation source that generates a mist of a solution containing at least water and in which a material for forming a film on the substrate is dissolved; a supply path that conveys the mist toward the substrate on the stage by a flow of a carrier gas; and a heater that heats at least a part of the supply path. The part of the supply path heated by the heater is provided as a mist heating section in which infrared rays are radiated from an inner surface of the supply path toward the mist. The inner surface of the supply path in the mist heating section is coated with a coating layer containing at least one of an oxide and a hydroxide of an element present in the mist.
-
公开(公告)号：US20230197519A1
公开(公告)日：2023-06-22
申请号：US18065082
申请日：2022-12-13
Inventor： YUJI NAGUMO , MASASHI UECHA , HIROKI TSUMA , TERUAKI KUMAZAWA
CPC classification number: H01L21/78 , H01L21/0485 , H01L21/0475 , H01L21/6836
Abstract: In a manufacturing method of a semiconductor device, a semiconductor wafer that is made of a semiconductor material harder than silicon and has a first surface and a second surface opposite to each other is prepared, a roughened layer is formed by grinding the second surface of the semiconductor wafer, a blade is pressed against the roughened layer to form a vertical crack in a surface layer of the semiconductor wafer, the roughened layer is removed after the vertical crack is formed, a rear surface electrode is formed on a rear surface of the semiconductor wafer on which the vertical crack is formed, and after the rear surface electrode is formed, the first surface of the semiconductor wafer is pressed and the semiconductor wafer is cleaved into multiple pieces with the vertical crack as a starting point.
-
-
-
-
-
-
-
-
-
Search Results
312
records
(took 0.019 seconds)
