Magnetically locatable optical fiber cables containing integrated
magnetic marker materials
    222.
    发明授权
    Magnetically locatable optical fiber cables containing integrated magnetic marker materials 失效
    包含集成磁性标记材料的磁性定位光纤电缆

    公开(公告)号:US5577147A

    公开(公告)日:1996-11-19

    申请号:US221130

    申请日:1994-03-31

    CPC classification number: G02B6/447

    Abstract: The present invention provides a dielectric optical fiber cable which is capable of being remotely detected while buried. Specifically, this invention incorporates magnetic materials into a layer of epoxy to from a distinct layer within the sheath system of a communications cable. The magnetic particles generate a detection signal which is distinguishable from that generated by a solid metallic pipe and does not adversely affect the operation of existing components of the cable nor does the incorporation of the magnetic marker layer of the present invention unduly limit the speeds at which the overall cable can be manufactured.

    Abstract translation: 本发明提供一种能够在埋藏时被远程检测的电介质光缆。 具体地,本发明将磁性材料结合到通信电缆的护套系统内的不同层的环氧树脂层中。 磁性颗粒产生与固体金属管产生的检测信号不同的检测信号,并且不会对电缆的现有部件的操作产生不利影响,也不会引入本发明的磁性标记层不适当地限制 整个电缆可以制造。

    Magnetoresistive oxide material and articles comprising the material
    223.
    发明授权
    Magnetoresistive oxide material and articles comprising the material 失效
    磁阻氧化物材料和包含该材料的制品

    公开(公告)号:US5538800A

    公开(公告)日:1996-07-23

    申请号:US315160

    申请日:1994-09-29

    CPC classification number: H01L43/10 Y10S428/90 Y10T428/1107

    Abstract: Materials of composition La.sub.v X.sub.w M.sub.y Mn.sub.z O.sub.x, with x selected from Mg, Sc, Al, Zn, Cd, In and the rare earths that have an ionic radius smaller than that of La, with M selected from Ca, Sr, Ba and Pb, and with v, w, y, z and x in the ranges 0.45-0.85, 0.01-0.20, 0.20-0.45, 0.7-1.3 and 2.5-3.5, respectively, can have substantially improved magnetoresistance (MR) ratios, as compared to the corresponding X-free comparison material. In particular, the novel materials in polycrystalline (or non-epitaxial thin film) form can have relatively large MR ratios. For instance, polycrystalline La.sub.0.60 Y.sub.0.07 Ca.sub.0.33 MnO.sub.x had a peak MR ratio in excess of 10,000% (in absolute value) in a field of 6 T.

    Abstract translation: 组成材料LavXwMyMnzOx,x选自Mg,Sc,Al,Zn,Cd,In以及离子半径小于La的稀土,M选自Ca,Sr,Ba和Pb,以及v 分别为0.45-0.85,0.01-0.20,0.20-0.45,0.7-1.3和2.5-3.5的范围内的w,y,z和x可以具有基本上改善的磁阻(MR)比, 免费比较材料。 特别地,多晶(或非外延薄膜)形式的新型材料可以具有相对大的MR比。 例如,多晶La0.60Y0.07Ca0.33MnOx在6T的场中具有超过10,000%(绝对值)的峰值MR比。

    Spaced-gate emission device and method for making same
    224.
    发明授权
    Spaced-gate emission device and method for making same 失效
    间隔栅极发射装置及其制造方法

    公开(公告)号:US5504385A

    公开(公告)日:1996-04-02

    申请号:US299470

    申请日:1994-08-31

    Abstract: In accordance with the invention, a field emission device is made by disposing emitter material on an insulating substrate, applying a sacrificial film to the emitter material and forming over the sacrificial layer a conductive gate layer having a random distribution of apertures therein. In the preferred process, the gate is formed by applying masking particles to the sacrificial film, applying a conductive film over the masking particles and the sacrificial film and then removing the masking particles to reveal a random distribution of apertures. The sacrificial film is then removed. The apertures then extend to the emitter material. In a preferred embodiment, the sacrificial film contains dielectric spacer particles which remain after the film is removed to separate the emitter from the gate. The result is a novel and economical field emission device having numerous randomly distributed emission apertures which can be used to make low cost flat panel displays.

    Abstract translation: 根据本发明,通过将发射极材料设置在绝缘衬底上,将牺牲膜施加到发射极材料并在牺牲层上形成具有其中孔径随机分布的导电栅极层而形成场致发射器件。 在优选的方法中,通过将掩模颗粒施加到牺牲膜,在掩模颗粒和牺牲膜上施加导电膜,然后去除掩模颗粒以显示孔的随机分布来形成栅极。 然后去除牺牲膜。 孔然后延伸到发射体材料。 在优选实施例中,牺牲膜包含介电间隔物颗粒,其在除去膜之后保留,以将发射极与栅极分离。 结果是一种新颖且经济的场致发射装置,其具有许多随机分布的发射孔,其可用于制造低成本的平板显示器。

    Method of shaping a diamond body
    226.
    发明授权
    Method of shaping a diamond body 失效
    成形钻石体的方法

    公开(公告)号:US5382314A

    公开(公告)日:1995-01-17

    申请号:US114704

    申请日:1993-08-31

    Applicant: Sungho Jin

    Inventor: Sungho Jin

    CPC classification number: H01L21/306 H01L21/3085 Y10T156/10

    Abstract: The disclosed method of shaping a diamond body, typically a polycrystalline diamond (PCD) wafer or film, involves forming a, typically patterned, layer of an "etch-retarding" material on a surface of the diamond body, followed by etching with an appropriate etchant (e.g., molten Ce). Etch-retarding materials are selected from the materials that have low (typically less than 5%) mutual solubility with the etchant at the processing temperature, and that essentially do not form an intermetallic compound with the etchant at the processing temperature. Among etch-retarding materials are Ag, Ca, Mg, Cr, Mo, W, V, Nb, Ta, Ti, Zr, Hf, B, P, and alloys thereof, as well as ceramics such as oxides, nitrides, carbides and borides, e.g., WO.sub.2, TiO.sub.2, MoC, TiC, Fe.sub.4 N, ZrN, MoN, CeB.sub.6 and Mo.sub.2 B. The etch-retarding material typically will be of appropriately chosen, non-uniform thickness, with the thickness at a given point depending on the amount of diamond material that is to be removed at that point. The disclosed method has wide applicability, e.g., for correcting thickness variations or curvature of PCD films.

    Abstract translation: 公开的形成金刚石体(通常为多晶金刚石(PCD)晶片或膜)的方法涉及在金刚石体的表面上形成通常被图案化的“蚀刻阻滞”材料层,然后用合适的 蚀刻剂(例如,熔融的Ce)。 蚀刻材料选自在处理温度下与蚀刻剂具有低(通常小于5%)互溶性的材料,并且在处理温度下基本上不与蚀刻剂形成金属间化合物。 在这些蚀刻阻滞材料中,Ag,Ca,Mg,Cr,Mo,W,V,Nb,Ta,Ti,Zr,Hf,B,P及其合金,以及氧化物,氮化物, 硼化物,例如WO2,TiO2,MoC,TiC,Fe4N,ZrN,MoN,CeB6和Mo2B。 通常蚀刻阻滞材料将具有适当选择的不均匀的厚度,其厚度取决于在该点被去除的金刚石材料的量。 所公开的方法具有广泛的适用性,例如用于校正PCD膜的厚度变化或曲率。

    Method for forming an image on a magnetic composite medium and apparatus
therefor
    227.
    发明授权
    Method for forming an image on a magnetic composite medium and apparatus therefor 失效
    在磁性复合介质上形成图像的方法及其装置

    公开(公告)号:US5324603A

    公开(公告)日:1994-06-28

    申请号:US870524

    申请日:1992-04-17

    CPC classification number: B43L1/008

    Abstract: In accordance with the invention, an image is formed by applying a local magnetic field to selected regions of a magnetic composite medium comprising columns of magnetic particles distributed in a matrix medium. The particles are "hard" or "semi-hard" magnetic materials in order to retain the latent image as residual magnetism, and the image is developed by exposure to magnetic fluid or powders. The image can be erased by exposure to an AC demagnetizing field or a DC sweep magnet. Preferred apparatus for making such images comprises a sheet of such composite material having a pair of major surfaces with columns of magnetic particles oriented between the surfaces. A local magnetic field, such as a magnetic pen, can be used to write a latent magnetic image on one of the major surfaces. The magnetic columns present the latent image for development at either major surface. In preferred apparatus, one major surface is adapted for magnetic image writing and the other major surface is positioned in sealed relationship with a chamber for exposing the image to magnetic development material. In this arrangement the columns provide a high resolution image on the second surface despite the thickness of the medium between the write and development surfaces.

    Abstract translation: 根据本发明,通过将局部磁场施加到包括分布在矩阵介质中的磁性颗粒列的磁性复合介质的选定区域来形成图像。 颗粒是“硬”或“半硬”磁性材料,以便将潜像保留为剩余磁性,并且通过暴露于磁性流体或粉末来显影图像。 可以通过暴露于AC去磁场或DC扫描磁体来擦除图像。 用于制造这种图像的优选装置包括这种复合材料的片材,其具有一对主表面和磁性颗粒列之间的表面。 可以使用诸如磁笔的局部磁场将潜在磁图像写在主表面之一上。 磁性柱呈现在两个主表面的潜像用于显影。 在优选的装置中,一个主表面适用于磁图像书写,另一个主表面与用于将图像曝露于磁性显影材料的室密封关系。 在这种布置中,尽管在写入和显影表面之间的介质的厚度,列在第二表面上提供高分辨率图像。

    High remanence iron-manganese alloys for magnetically actuated devices
    230.
    发明授权
    High remanence iron-manganese alloys for magnetically actuated devices 失效
    用于磁力驱动装置的高剩磁铁锰合金

    公开(公告)号:US4475961A

    公开(公告)日:1984-10-09

    申请号:US468089

    申请日:1983-02-22

    Applicant: Sungho Jin

    Inventor: Sungho Jin

    Abstract: Magnetically actuated devices such as, e.g., switches and synchronizers typically comprise a magnetically semihard component having a square B-H hysteresis loop and high remanent induction. Among alloys having such properties are Co-Fe-V, Co-Fe-Nb, and Co-Fe-Ni-Al-Ti alloys which, however, contain undesirably large amounts of cobalt.According to the invention, devices are equipped with a magnetically semihard, high-remanence Fe-Mn alloy which contains Mn in a preferred amount in the range of 3-25 weight percent whose remanence B.sub.r (gauss) typically is greater than or equal to 20,000-500.times. (weight percent Mn), and whose squareness B.sub.r /B.sub.s typically is greater than 0.95.Magnets made from alloys of the invention may be shaped, e.g., by cold drawing, rolling, bending, or flattening and may be used in devices such as, e.g., electrical contact switches, hysteresis motors, and other magnetically actuated devices.Preparation of alloys of the invention may be by a treatment of initial deformation, aging, deformation, and final aging.

    Abstract translation: 诸如开关和同步器的磁致动器件通常包括具有平方B-H磁滞回线和高剩磁感应的磁半硬件部件。 在具有这种性能的合金中,Co-Fe-V,Co-Fe-Nb和Co-Fe-Ni-Al-Ti合金,然而,其含有不期望的大量的钴。 根据本发明,装置配备有磁半硬,高剩余的Fe-Mn合金,其含有优选量为3-25重量%的Mn,其余量Br(高斯)通常大于或等于20,000 -500x(重量百分比Mn),其矩形Br / B通常大于0.95。 由本发明的合金制成的磁体可以例如通过冷拉伸,轧制,弯曲或平坦化成形,并且可以用于例如电接触开关,磁滞电动机和其它磁致动装置的装置中。 本发明的合金的制备可以通过处理初始变形,老化,变形和最终老化。

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