公开(公告)号：US5959388A

公开(公告)日：1999-09-28

申请号：US957954

申请日：1997-10-27

Applicant: John Edwin Graebner ,  Sungho Jin ,  Wei Zhu

Inventor： John Edwin Graebner ,  Sungho Jin ,  Wei Zhu

IPC: H03H9/22 ,  H03H9/64 ,  H01L41/04 ,  H03H7/34

CPC classification number: H03H9/22 ,  H03H9/6403

Abstract: In accordance with the invention, the operating frequency of a SAW device is magnetically tuned. In a first embodiment, the SAW device comprises a piezoelectric layer mechanically coupled to a substrate or body of magnetostrictive material. Strains magnetically induced in the magnetostrictive substrate is coupled to the piezoelectric layer, altering the velocity at which it can transmit acoustic waves. In an alternative embodiment, surface waves are directly generated in a magnetostrictive material and the velocity is directly altered by an applied magnetic field.

Abstract translation: 根据本发明，SAW器件的工作频率被磁调谐。 在第一实施例中，SAW器件包括机械耦合到磁致伸缩材料的衬底或主体的压电层。 在磁致伸缩衬底中磁感应的应变耦合到压电层，改变其可以传播声波的速度。 在替代实施例中，在磁致伸缩材料中直接产生表面波，并且所施加的磁场直接改变速度。

公开(公告)号：US5811916A

公开(公告)日：1998-09-22

申请号：US752235

申请日：1996-11-19

Applicant: Sungho Jin ,  Gregory Peter Kochanski ,  Lawrence Seibles ,  Wei Zhu

Inventor： Sungho Jin ,  Gregory Peter Kochanski ,  Lawrence Seibles ,  Wei Zhu

IPC: C30B29/04 ,  C30B30/02 ,  C30B31/20 ,  H01J1/304 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  H01L21/205 ,  H01J1/30

CPC classification number: H01J1/3042 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2329/00

Abstract: Applicants have discovered methods for making, treating and using diamonds which substantially enhance their capability for low voltage emission. Specifically, applicants have discovered that defect-rich diamonds--diamonds grown or treated to increase the concentration of defects--have enhanced properties of low voltage emission. Defect-rich diamonds are characterized in Raman spectroscopy by a diamond peak at 1332 cm.sup.-1 broadened by a full width at half maximum .DELTA.K in the range 5-15 cm.sup.-1 (and preferably 7-11 cm.sup.-1). Such defect-rich diamonds can emit electron current densities of 0.1 mA/mm.sup.2 or more at a low applied field of 25 V/.mu.m or less. Particularly advantageous structures use such diamonds in an array of islands or particles each less than 10 .mu.m in diameter at fields of 15 V/.mu.m or less.

公开(公告)号：US5747918A

公开(公告)日：1998-05-05

申请号：US567867

申请日：1995-12-06

Applicant: Chang-Beom Eom ,  Sungho Jin ,  Gregory Peter Kochanski ,  Mark Thomas McCormack ,  Yiu-Huen Wong

Inventor： Chang-Beom Eom ,  Sungho Jin ,  Gregory Peter Kochanski ,  Mark Thomas McCormack ,  Yiu-Huen Wong

IPC: H01J31/12 ,  H01J1/304 ,  H01J29/04 ,  H01J1/30

CPC classification number: H01J1/3042 ,  H01J2201/30403 ,  H01J2201/30457

Abstract: A novel and advantageous cathode structure for a field emission display apparatus is disclosed. A given pixel comprises a multiplicity of spaced apart emitter bodies on a support. A given emitter body comprises diamond and/or rare earth boride, and has a relatively sharp geometrical feature that facilitates electron emission from the emitter body. By way of example, the emitter body comprises diamond bodies grown on a support, or it comprises a pre-existing diamond particle that was placed on the support. Such emitter bodies generally can be provided easily and at low cost, and typically have naturally occurring sharp geometrical features such as points and edges. We have also discovered that appropriately grown rare earth boride films of thickness 30 nm or less may substantially improve electron emission from emitter bodies, and some preferred embodiments of the invention comprise a cathode structure that comprises a thin layer of, e.g., LaB.sub.6 on the emitter bodies. Methods of making cathodes according to the invention are also disclosed.

Abstract translation: 公开了一种用于场发射显示装置的新型和有利的阴极结构。 给定像素包括在支撑体上的多个间隔开的发射体。 给定的发射体包括金刚石和/或稀土硼化物，并且具有促进发射体的电子发射的相对尖锐的几何特征。 作为示例，发射器体包括在支撑体上生长的金刚石体，或者包括放置在支撑体上的预先存在的金刚石颗粒。 这样的发射体通常可以容易且低成本地提供，并且通常具有天然存在的尖锐几何特征，例如点和边缘。 我们还发现，适当生长的厚度为30nm或更小的稀土硼化物膜可以显着改善发射体的电子发射，并且本发明的一些优选实施例包括阴极结构，其包括例如发射极上的LaB6的薄层 身体。 还公开了制备根据本发明的阴极的方法。

公开(公告)号：US5717292A

公开(公告)日：1998-02-10

申请号：US565739

申请日：1995-11-30

Applicant: Sungho Jin ,  Gregory Peter Kochanski ,  Wei Zhu

Inventor： Sungho Jin ,  Gregory Peter Kochanski ,  Wei Zhu

IPC: H01J17/14 ,  H01J17/49 ,  H01J17/89

CPC classification number: H01J17/14 ,  H01J17/49

Abstract: Improved plasma displays utilize permanent magnet components for low-voltage operation. Permanent magnet components providing magnetic fields transverse to the direction of electron movement increase the electron pathlength, thereby enhancing the ionization efficiency of the electrons. This permits lower voltage operation, higher-pixel density and greater durability. In exemplary embodiments, magnetic components can be placed below the cathode, disposed between the electrodes, or incorporated in the cathode.

Abstract translation: 改进的等离子体显示器利用永磁体组件进行低电压操作。 提供横向于电子运动方向的磁场的永磁体组件增加了电子路径长度，从而提高了电子的电离效率。 这允许较低的电压操作，更高的像素密度和更高的耐用性。 在示例性实施例中，磁性部件可以放置在阴极下方，设置在电极之间，或并入阴极中。

公开(公告)号：US5709577A

公开(公告)日：1998-01-20

申请号：US361616

申请日：1994-12-22

Applicant: Sungho Jin ,  Gregory Peter Kochanski ,  Wei Zhu

Inventor： Sungho Jin ,  Gregory Peter Kochanski ,  Wei Zhu

IPC: H01J31/12 ,  H01J1/304 ,  H01J9/02 ,  H01J23/06 ,  H01J29/04 ,  H01J1/30

CPC classification number: H01J23/06 ,  H01J1/3042 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J61/0677 ,  H01J61/0737

Abstract: Applicants have discovered methods for making electron emitters using commercially available diamond particles treated to enhance their capability for electron emission under extremely low electric fields. Specifically, applicants have discovered that electron emitters comprising ultra-fine (5-10,000 nm) diamond particles heat-treated by a hydrogen plasma, can produce electron emission current density of at least 0.1 mA/mm.sup.2 at extremely low electric fields of 0.5-1.5 V/.mu.m. These field values are about an order of magnitude lower than exhibited by the best defective CVD diamond and almost two orders of magnitude lower than p-type semiconducting diamond. Emitters are preferably fabricated by suspending the ultra-fine diamond particles, preferably in the nanometer size range, in an aqueous solution, applying the suspension as a coating onto a conducting substrate such as n-type Si or metal, and then subjecting the coated substrate to a plasma of hydrogen, preferably at temperatures above 300.degree. C. for a period of 30 minutes or longer. The resulting emitters show excellent emission properties such as extremely low turn-on voltage, good uniformity and high current densities. It is further found that the emission characteristics remain the same even after the plasma treated diamond surface is exposed to air for several months.

Abstract translation: 申请人已经发现使用经过处理以提高其在极低电场下电子发射能力的市售金刚石颗粒来制造电子发射体的方法。 具体地，申请人已经发现，包含由氢等离子体热处理的超细（5-10,000nm）金刚石颗粒的电子发射体可在0.5-1.5的极低电场下产生至少0.1mA / mm 2的电子发射电流密度 V /亩。 这些场值比由最好的有缺陷的CVD金刚石显示的低一个数量级，比p型半导体金刚石低两个数量级。 优选地，通过将​​优选在纳米尺寸范围的超细金刚石颗粒悬浮在水溶液中，将悬浮液作为涂层施涂到诸如n型Si或金属的导电基材上，然后对涂覆的基材 至氢的等离子体，优选在高于300℃的温度下持续30分钟或更长时间。 所得到的发射体显示出优异的发射特性，例如极低的导通电压，良好的均匀性和高的电流密度。 进一步发现即使在等离子体处理的金刚石表面暴露于空气几个月之后，发射特性也保持不变。

公开(公告)号：US5698934A

公开(公告)日：1997-12-16

申请号：US695441

申请日：1996-08-12

Applicant: Sungho Jin ,  Gregory Peter Kochanski ,  Wei Zhu

Inventor： Sungho Jin ,  Gregory Peter Kochanski ,  Wei Zhu

IPC: H01J1/304 ,  H01J9/02 ,  H01J31/12 ,  H01J1/30

CPC classification number: H01J9/025 ,  H01J1/304 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2329/8625

Abstract: In accordance with the invention, a field emission device is made by disposing emitter material on an insulating substrate, applying masking particles to the emitter material, applying an insulating film and a gate conductor film over the masking particles and emitter material and removing the particles to reveal a random distribution of apertures to the emitter material. The result is a novel and economical field emission device having numerous randomly distributed emission apertures which can be used to make low cost flat panel displays.

Abstract translation: 根据本发明，通过将发射体材料设置在绝缘基板上，将掩模粒子施加到发射极材料，在掩模颗粒和发射体材料上施加绝缘膜和栅极导体膜，并将颗粒除去，制成场致发射器件 揭示孔径随机分布到发射体材料。 结果是一种新颖且经济的场致发射装置，其具有许多随机分布的发射孔，其可用于制造低成本的平板显示器。

公开(公告)号：US5698496A

公开(公告)日：1997-12-16

申请号：US387142

申请日：1995-02-10

Applicant: Richard Alan Fastnacht ,  Sungho Jin ,  Wei Zhu

Inventor： Richard Alan Fastnacht ,  Sungho Jin ,  Wei Zhu

IPC: H01L39/24 ,  H01B5/16 ,  H01B12/02 ,  H01B13/00 ,  H01L21/48 ,  H01L23/498 ,  H01L39/06 ,  H01R12/71 ,  H01R13/24 ,  H01R43/00 ,  H05K3/10 ,  H05K3/34 ,  H05K3/40 ,  B05D5/12 ,  B05D3/02

CPC classification number: H01R13/2407 ,  H01L21/486 ,  H01L23/49827 ,  H01R43/007 ,  H05K3/3436 ,  H01L2924/0002 ,  H01R12/714 ,  H05K2201/09945 ,  H05K2201/10378 ,  H05K3/105 ,  H05K3/4038 ,  H05K3/4069 ,  Y02P70/613 ,  Y10S505/739

Abstract: In accordance with the invention, a high density z-direction interconnection medium is made by the steps of providing a non-conductive membrane having z-direction channels, filling the channels with liquid precursor of conductive material, converting the trapped precursor into conductive material within the channels, and, advantageously, forming solder bumps in contact with the conductive material in the channels. The method is particularly useful for forming hollow tubular or porous conductive pathways having enhanced resistance to thermal and mechanical stress. The channels can be conveniently filled by vacuum suction,

Abstract translation: 根据本发明，通过以下步骤制造高密度z方向互连介质：提供具有z方向通道的非导电膜，用导电材料的液体前体填充通道，将捕获的前体转化成导电材料 通道，并且有利地形成与通道中的导电材料接触的焊料凸块。 该方法对于形成具有增强的耐热和机械应力的中空管状或多孔导电通路特别有用。 通过真空抽吸方便地填充通道，

公开(公告)号：US5674107A

公开(公告)日：1997-10-07

申请号：US429263

申请日：1995-04-25

Applicant: John Edwin Graebner ,  Sungho Jin ,  Guenther Wilhelm Kammlott ,  Wei Zhu

Inventor： John Edwin Graebner ,  Sungho Jin ,  Guenther Wilhelm Kammlott ,  Wei Zhu

IPC: B24B13/00 ,  B24B37/04 ,  B24B1/00

CPC classification number: B24B37/04 ,  B24B13/00

Abstract: A novel technique for fine polishing surfaces of diamond to the submicron level involves applying to the diamond surface an oxygen-emitting polishing medium, either a dry powder or a powder dispersed in a liquid carrier. The diamond surface is then polished by high speed rubbing to a submicron finish by inducing oxygen emission and oxygen-carbon interaction. Several embodiments of apparatus for polishing are described.

Abstract translation: 用于将金刚石表面精细抛光到亚微米级的新技术涉及向金刚石表面施加氧发射抛光介质，即分散在液体载体中的干粉或粉末。 然后通过诱导氧气发射和氧 - 碳相互作用，将金刚石表面通过高速摩擦抛光至亚微米表面。 描述抛光装置的几个实施例。

公开(公告)号：US5664884A

公开(公告)日：1997-09-09

申请号：US509267

申请日：1995-07-31

Applicant: John Edwin Graebner ,  Sungho Jin

Inventor： John Edwin Graebner ,  Sungho Jin

IPC: G01N25/18 ,  G01N25/20

CPC classification number: G01N25/18

Abstract: This invention involves apparatus for determining the thermal resistivities W.sub.s (=1/.kappa..sub.s) of electrically insulating, crystalline or polycrystalline samples under test (SUTs), all comprising host material such as CVD diamond. Once the optical absorptivities .alpha..sub.1 and .alpha..sub.2 and the thermal resistivities W.sub.1 and W.sub.2 of at least two other crystalline or polycrystalline bodies B.sub.1 and B.sub.2, respectively, comprising the same host material as the SUTs, and containing the same type of impurity or combination of impurities as the SUTs, are measured by some other technique--the inventive apparatus can then determine the thermal resistivities W.sub.s of the SUTs rather quickly from a measurement only of the optical absorptivities a.sub.s of the SUTs. These determinations of the thermal resistivities W.sub.s of the SUTs rely on our discovery that the following linear relationship exists: W=A+C.alpha., where A and C are constants so long as the type of impurity or combination of impurities in all the bodies B.sub.1, B.sub.2, and SUTs is the same, even though the impurities or combination of impurities have different concentrations in the bodies B.sub.1 and B.sub.2, as well as in the SUTs.

Abstract translation: 本发明涉及用于确定所测试的电绝缘，结晶或多晶样品（SUT）的热电阻W s（= 1 / kapp）的设备，其全部包括诸如CVD金刚石的主体材料。 一旦光吸收率α1和α2以及至少两个其它晶体或多晶体B1和B2的热电阻W1和W2分别包含与SUT相同的主体材料，并且含有相同类型的杂质或组合 作为SUT的杂质通过一些其它技术来测量，然后本发明的设备可以从仅从SUT的光吸收率的测量中快速地确定SUT的热电阻Ws。 SUT的热电阻Ws的这些测定依赖于我们的发现，存在以下线性关系：W = A +Cα，其中A和C是常数，只要所有体的杂质或杂质的组合B1 ，B2和SUT相同，即使杂质或杂质组合在体B1和B2以及SUT中也具有不同的浓度。

公开(公告)号：US5637950A

公开(公告)日：1997-06-10

申请号：US331458

申请日：1994-10-31

Applicant: Sungho Jin ,  Gregory P. Kochanski ,  Lawrence Seibles ,  Wei Zhu

Inventor： Sungho Jin ,  Gregory P. Kochanski ,  Lawrence Seibles ,  Wei Zhu

IPC: C30B29/04 ,  C30B30/02 ,  C30B31/20 ,  H01J1/304 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  H01L21/205 ,  H01J1/30

CPC classification number: H01J1/3042 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2329/00

Abstract: Applicants have discovered methods for making, treating and using diamonds which substantially enhance their capability for low voltage emission. Specifically, applicants have discovered that defect-rich diamonds--diamonds grown or treated to increase the concentration of defects--have enhanced properties of low voltage emission. Defect-rich diamonds are characterized in Raman spectroscopy by a diamond peak at 1332 cm.sup.-1 broadened by a full width at half maximum .DELTA.K in the range 5-15 cm.sup.-1 (and preferably 7-11 cm.sup.-1). Such defect-rich diamonds can emit electron current densities of 0.1 mA/mm.sup.2 or more at a low applied field of 25 V/.mu.m or less. Particularly advantageous structures use such diamonds in an array of islands or particles each less than 10 .mu.m in diameter at fields of 15 V/.mu.m or less.

Abstract translation: 申请人已经发现了用于制造，处理和使用金刚石的方法，其大大增强了它们的低电压发射能力。 具体来说，申请人已经发现，生长或处理以增加缺陷浓度的富含缺陷的钻石 - 金刚石具有增强的低电压发射性能。 富含缺陷的金刚石的特征在于在1332cm-1处的金刚石峰，在5-15cm -1（优选7-11cm -1）的范围内以最大DELTA K的全宽度加宽的拉曼光谱。 这样的富含缺陷的金刚石可以在25V /μm以下的低施加电场下发射0.1mA / mm 2以上的电子密度。 特别有利的结构在15V /μm或更小的场中使用直径小于10μm的岛或颗粒阵列中的这种金刚石。