公开(公告)号：US11430910B2

公开(公告)日：2022-08-30

申请号：US16074348

申请日：2017-02-01

申请人： Soitec

发明人： Cécile Aulnette ,  Frank Dimroth ,  Eduard Oliva

IPC分类号： H01L31/044 ,  H01L31/18 ,  H01L31/056 ,  H01L31/02 ,  H01L31/0735

摘要： An engineered substrate comprises: a seed layer made of a first semiconductor material for growth of a solar cell; a support substrate comprising a base and a surface layer epitaxially grown on a first side of the base, the base and the surface layer made of a second semiconductor material; a direct bonding interface between the seed layer and the surface layer; wherein a doping concentration of the surface layer is higher than a predetermined value such that the electrical resistivity at the direct bonding interface is below 10 mOhm·cm2, preferably below 1 mOhm·cm2; and wherein a doping concentration of the base as well as the thickness of the engineered substrate are such that absorption of the engineered substrate is less than 20%, preferably less than 10%, and total area-normalized series resistance of the engineered substrate is less than 10 mOhm·cm2, preferably less than 1 mOhm·cm2.

公开(公告)号：US11417788B2

公开(公告)日：2022-08-16

申请号：US12950912

申请日：2010-11-19

申请人： Robyn L. Woo ,  Daniel C. Law ,  Joseph Charles Boisvert

发明人： Robyn L. Woo ,  Daniel C. Law ,  Joseph Charles Boisvert

IPC分类号： H01L31/0693 ,  H01L31/0735 ,  H01L31/0304 ,  H01L31/0687 ,  H01L29/88

摘要： A type-II tunnel junction is disclosed that includes a p-doped AlGaInAs tunnel layer and a n-doped InP tunnel layer. Solar cells are further disclosed that incorporate the high bandgap type-II tunnel junction between photovoltaic subcells.

公开(公告)号：US20220238742A1

公开(公告)日：2022-07-28

申请号：US17667194

申请日：2022-02-08

申请人： John Hart ,  Daniel Derkacs ,  Zachary Bittner ,  Andrew Colin Espenlaub

发明人： John Hart ,  Daniel Derkacs ,  Zachary Bittner ,  Andrew Colin Espenlaub

IPC分类号： H01L31/0725 ,  H01L31/18 ,  H01L31/0735 ,  H01L31/065

摘要： A multijunction solar cell including an upper first solar subcell having a first band gap and positioned for receiving an incoming light beam; and a second solar subcell disposed below and adjacent to and lattice matched with said upper first solar subcell, and having a second band gap smaller than said first band gap; wherein at least one of the solar subcells has a graded band gap throughout the thickness of at least a portion of its emitter layer and base layer.

公开(公告)号：US20220238732A1

公开(公告)日：2022-07-28

申请号：US17611713

申请日：2020-05-26

申请人： SHIN-ETSU HANDOTAI CO., LTD.

发明人： Junya ISHIZAKI

IPC分类号： H01L31/02 ,  H01L31/0443 ,  H01L31/053 ,  H01L31/0735 ,  H01L31/18

摘要： A method for producing an electronic device having a drive circuit including a solar cell structure, the method including the steps of: having a first wafer having solar cell structures on a starting substrate and a second wafer having drive circuits formed, so that either one of the first wafer or the second wafer has a plurality of independent diode circuits and capacitor-function laminated portions; obtaining a bonded wafer by bonding so that the solar cell structures, the diode circuits, the capacitor-function laminated portions, and the drive circuits are superimposed; wiring; and dicing the bonded wafer; thus creating a method for producing an electronic device including a drive circuit, a solar cell structure, and a capacitor-function portion in one chip and having a suppressed production cost; and such an electronic device.

公开(公告)号：US11374140B2

公开(公告)日：2022-06-28

申请号：US17373254

申请日：2021-07-12

申请人： AZUR SPACE Solar Power GmbH

发明人： Matthias Meusel ,  Alexander Berg ,  Philipp Schroth ,  Susanne Schreier

IPC分类号： H01L31/0725 ,  H01L31/0735

摘要： A monolithic metamorphic multi-junction solar cell comprising a first III-V subcell and a second III-V subcell and a third III-V subcell and a fourth Ge subcell, wherein the subcells are stacked on top of each other in the indicated order, and the first subcell forms the topmost subcell, and a metamorphic buffer is formed between the third subcell and the fourth subcell and all subcells each have an n-doped emitter layer and a p-doped base layer, and the emitter layer of the second subcell is greater than the base layer.

公开(公告)号：US11367802B2

公开(公告)日：2022-06-21

申请号：US16269848

申请日：2019-02-07

申请人： Alliance for Sustainable Energy, LLC ,  Georgia Institute of Technology

发明人： Myles Aaron Steiner ,  Daniel Joseph Friedman ,  Ryan Matthew France ,  Asegun Henry

IPC分类号： H01L31/00 ,  H01L31/0735 ,  H02S10/30 ,  H01L31/0725 ,  H01L31/18

摘要： The present disclosure relates to a photovoltaic (PV) device that includes a first junction constructed with a first alloy and having a bandgap between about 1.0 eV and about 1.5 eV, and a second junction constructed with a second alloy and having a bandgap between about 0.9 eV and about 1.3 eV, where the first alloy includes III-V elements, the second alloy includes III-V elements, and the PV device is configured to operate in a thermophotovoltaic system having an operating temperature between about 1500° C. and about 3000° C.

公开(公告)号：US20220013678A1

公开(公告)日：2022-01-13

申请号：US17373254

申请日：2021-07-12

申请人： AZUR SPACE Solar Power GmbH

发明人： Matthias MEUSEL ,  Alexander BERG ,  Philipp SCHROTH ,  Susanne SCHREIER

IPC分类号： H01L31/0725 ,  H01L31/0735

摘要： A monolithic metamorphic multi-junction solar cell comprising a first III-V subcell and a second III-V subcell and a third III-V subcell and a fourth Ge subcell, wherein the subcells are stacked on top of each other in the indicated order, and the first subcell forms the topmost subcell, and a metamorphic buffer is formed between the third subcell and the fourth subcell and all subcells each have an n-doped emitter layer and a p-doped base layer, and the emitter layer of the second subcell is greater than the base layer.

公开(公告)号：US20220013676A1

公开(公告)日：2022-01-13

申请号：US17373199

申请日：2021-07-12

申请人： AZUR SPACE Solar Power GmbH

发明人： Daniel FUHRMANN ,  Rosalinda VAN LEEST ,  Gregor KELLER ,  Matthias MEUSEL

IPC分类号： H01L31/0725 ,  H01L31/0735 ,  H01L31/074 ,  H01L31/043

摘要： A stacked monolithic multijunction solar cell, which includes a first subcell having a p-n junction with an emitter layer and a base layer, the thickness of the emitter layer being less than the thickness of the base layer at least by a factor of ten, and the first subcell comprising a substrate having a semiconductor material from the groups III and V or a substrate from the group IV, and which further includes a second subcell arranged on the first subcell and a third subcell arranged on the second subcell, the two subcells each including an emitter layer and a base layer, and a tunnel diode and a back side field layer each being formed between the subcells, the thickness of the emitter layer being greater than the thickness of the base layer in each case between the second subcell and in the third subcell.

公开(公告)号：US20210351313A1

公开(公告)日：2021-11-11

申请号：US17114158

申请日：2020-12-07

申请人： SolAero Technologies Corp.

发明人： Daniel Derkacs ,  John Hart ,  Zachary Bittner

IPC分类号： H01L31/0725 ,  H01L31/0735 ,  H01L31/18

摘要： A multijunction solar cell including an upper first solar subcell having a first band gap and positioned for receiving an incoming light beam; a second solar subcell disposed below and adjacent to and lattice matched with said upper first solar subcell, and having a second band gap smaller than said first band gap; wherein at least one of the solar cells has a graded band gap throughout its thickness.

公开(公告)号：US11018231B2

公开(公告)日：2021-05-25

申请号：US14954195

申请日：2015-11-30

申请人： Yale University

发明人： Jung Han ,  Yufeng Li ,  Cheng Zhang ,  Sung Hyun Park

IPC分类号： H01L29/20 ,  H01L31/0304 ,  H01L21/324 ,  H01L33/40 ,  H01L21/306 ,  H01L33/16 ,  H01L31/0352 ,  H01L31/036 ,  H01L31/0725 ,  H01L31/0735 ,  H01L33/32 ,  H01L29/207 ,  H01L29/15 ,  H01L29/88

摘要： A conductive, porous gallium-nitride layer can be formed as an active layer in a multilayer structure adjacent to one or more p-type III-nitride layers, which may be buried in a multilayer stack of an integrated device. During an annealing process, dopant-bound atomic species in the p-type layers that might otherwise neutralize the dopants may dissociate and out-diffuse from the device through the porous layer. The release and removal of the neutralizing species may reduce layer resistance and improve device performance.