- 专利标题： Type-II high bandgap tunnel junctions of InP lattice constant for multijunction solar cells
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申请号： US12950912申请日： 2010-11-19
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公开(公告)号： US11417788B2公开(公告)日： 2022-08-16
- 发明人: Robyn L. Woo , Daniel C. Law , Joseph Charles Boisvert
- 申请人： Robyn L. Woo , Daniel C. Law , Joseph Charles Boisvert
- 申请人地址： US CA Santa Monica; US CA Arcadia; US CA Thousand Oaks
- 专利权人： Robyn L. Woo,Daniel C. Law,Joseph Charles Boisvert
- 当前专利权人： Robyn L. Woo,Daniel C. Law,Joseph Charles Boisvert
- 当前专利权人地址： US CA Santa Monica; US CA Arcadia; US CA Thousand Oaks
- 代理机构： MH2 Technology Law Group LLP
- 主分类号： H01L31/0693
- IPC分类号： H01L31/0693 ; H01L31/0735 ; H01L31/0304 ; H01L31/0687 ; H01L29/88
摘要：
A type-II tunnel junction is disclosed that includes a p-doped AlGaInAs tunnel layer and a n-doped InP tunnel layer. Solar cells are further disclosed that incorporate the high bandgap type-II tunnel junction between photovoltaic subcells.
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