Method of fabricating an oxide layer on a silicon carbide layer utilizing an anneal in a hydrogen environment
    11.
    发明申请
    Method of fabricating an oxide layer on a silicon carbide layer utilizing an anneal in a hydrogen environment 有权
    在氢气环境中利用退火在碳化硅层上制造氧化物层的方法

    公开(公告)号:US20020102358A1

    公开(公告)日:2002-08-01

    申请号:US10045542

    申请日:2001-10-26

    摘要: Silicon carbide structures are fabricated by fabricating a nitrided oxide layer on a layer of silicon carbide and annealing the nitrided oxide layer in an environment containing hydrogen. Such a fabrication of the nitrided oxide layer may be provided by forming the oxide layer in at least one of nitric oxide and nitrous oxide and/or annealing an oxide layer in at least one of nitric oxide and nitrous oxide. Alternatively, the nitrided oxide layer may be provided by fabricating an oxide layer and fabricating a nitride layer on the oxide layer so as to provide the nitrided oxide layer on which the nitride layer is fabricated. Furthermore, annealing the oxide layer may be provided as a separate step and/or substantially concurrently with another step such as fabricating the nitride layer or performing a contact anneal. The hydrogen environment may be pure hydrogen, hydrogen combined with other gases and/or result from a hydrogen precursor. Anneal temperatures of 400null C. or greater are preferred.

    摘要翻译: 通过在碳化硅层上制造氮化氧化物层并在包含氢的环境中退火氮化氧化物层来制造碳化硅结构。 氮化氧化物层的这种制造可以通过在一氧化氮和一氧化二氮中的至少一种中形成氧化物层和/或在一氧化氮和一氧化二氮中的至少一种中退火氧化物层来提供。 或者,可以通过制造氧化物层并在氧化物层上制造氮化物层来提供氮化氧化物层,以提供其上制造氮化物层的氮化氧化物层。 此外,退火氧化物层可以作为单独的步骤和/或基本上与另一步骤同时进行,例​​如制造氮化物层或进行接触退火。 氢气环境可以是纯氢气,氢气与其他气体组合和/或由氢气前体产生。 优选400℃以上的退火温度。

    Coating film formation method
    13.
    发明申请
    Coating film formation method 失效
    涂膜形成方法

    公开(公告)号:US20020090461A1

    公开(公告)日:2002-07-11

    申请号:US09938674

    申请日:2001-08-27

    摘要: In a coating film formation method in which the thermosetting water-borne color paint (A) is coated on the surface of the substrate, then a thermosetting water-borne paint containing color pigment and/or glittering pigment (B) is coated on said coated surface, and, after predrying as necessary, a thermosetting clear paint (C) is coated and after that said 3-layer coating films of (A), (B) and (C) are simultaneously cured by heating, the solid content of the wet coat is controlled by an air jet step in which the air, whose temperature and/or humidity are controlled, is jetted from behind the paint nozzle in approximately the same direction as the atomized particles of said thermosetting water color paint (A) move to the surface of the substrate, when said paint is coated, around the spray pattern so that the air touches said pattern.

    摘要翻译: 在将热固性水性着色漆(A)涂布在基材表面上的涂膜形成方法中,将含有着色颜料和/或闪光颜料(B)的热固性水性涂料涂布在所述涂布 表面,并且根据需要预干燥后,涂布热固性透明涂料(C),之后,通过加热同时使(A),(B)和(C)的3层涂膜同时固化, 湿涂层通过空气喷射步骤控制,其中控制温度和/或湿度的空气沿着与所述热固性水性颜料(A)的雾化颗粒移动到大致相同的方向从喷漆器后面喷射, 当所述涂料涂覆时,基材的表面围绕喷雾图案,使得空气接触所述图案。

    Substrate processing method and substrate processing apparatus
    14.
    发明申请
    Substrate processing method and substrate processing apparatus 失效
    基板处理方法和基板处理装置

    公开(公告)号:US20020037371A1

    公开(公告)日:2002-03-28

    申请号:US09858107

    申请日:2001-05-15

    IPC分类号: B05D003/04 B05D001/18

    摘要: The wafers W are dipped and rinsed in pure water in the processing bath 60, and then dichloromethane is fed into the processing bath 60, thereby changing the state of the wafer W from being dipped in pure water to being dipped in dichloromethane. Thereafter, the wafers W is raised up to the drying chamber 61, and dichloromethane remained on the surface of each wafer W is evaporated, and the hot N2 gas is discharged onto the wafers W. Thereby, no water marks are produced, and no resist is dissolved, and the substrate can be dried in safety.

    摘要翻译: 将晶片W在处理槽60中的纯水中浸渍并冲洗,然后将二氯甲烷加入到处理槽60中,从而将晶片W的状态从浸入纯水中浸入二氯甲烷中。 此后,将晶片W升高到干燥室61,并且残留在每个晶片W的表面上的二氯甲烷被蒸发,并且将热的N 2气体排出到晶片W上。由此,不产生水痕,并且没有抗蚀剂 溶解,并且基板可以安全地干燥。

    Method for producing optical recording medium
    16.
    发明申请
    Method for producing optical recording medium 失效
    光记录介质的制造方法

    公开(公告)号:US20010053409A1

    公开(公告)日:2001-12-20

    申请号:US09780797

    申请日:2001-02-09

    发明人: Toshihiro Akimori

    摘要: A recording medium based on the organic dye having excellent storage reliability is to be produced. In producing an optical recording medium having on a substrate a recording layer containing an organic dyestuff and a metal layer, the metal layer is first formed, and the atmosphere of a transport path used for transferring the resulting product to the next stage is set to the relative humidity of 40% or less. The metal layer may e.g., be a reflective layer. In controlling the relative humidity, a shielding plate is provided around the transport path and the relative humidity of an area encircled by this shielding plate is controlled by an air conditioner.

    摘要翻译: 可以制造出具有良好存储可靠性的基于有机染料的记录介质。 在制造在基板上具有包含有机染料和金属层的记录层的光学记录介质时,首先形成金属层,并将用于将所得产物转移到下一级的输送路径的气氛设定为 相对湿度在40%以下。 金属层可以例如是反射层。 在控制相对湿度时,围绕输送路径设置遮蔽板,由该遮蔽板包围的区域的相对湿度由空调器控制。

    Pressure-saturating system for moving web
    17.
    发明申请
    Pressure-saturating system for moving web 审中-公开
    用于移动网的压力饱和系统

    公开(公告)号:US20010038888A1

    公开(公告)日:2001-11-08

    申请号:US09745203

    申请日:2000-12-21

    IPC分类号: B05D003/04 B05D003/12

    CPC分类号: D21H23/40

    摘要: A system for treating a porous web with a liquid treatment liquid continuously moves the web along a path sequentially through a saturating station, steaming station, and drying station. A drum in the saturating station engages a back face of the web and a trough closely surrounds the drum and confronts a front face of the web. Seals form between the drum and trough a generally closed and pressurizable chamber through which the web passes and which is supplied with the treatment liquid at superatmospheric pressure so as to force the liquid against only the front face of the web. In the steaming station jets of steam are directed against the back face of the web to heat the web and disperse the treatment liquid throughout the web. The web is heated and dried in the drying station.

    摘要翻译: 用液体处理液处理多孔幅材的系统连续地使纸幅沿着路径顺序地通过饱和工位,蒸汽站和干燥站移动。 饱和台​​中的滚筒与腹板的背面接合,并且槽紧紧围绕滚筒并面对腹板的前表面。 在滚筒和槽之间形成密封件,其通常封闭并且可加压的室,网通过该室通过并且在超大气压下被供应处理液体,以迫使液体仅抵靠卷材的前表面。 在蒸汽站中,蒸汽喷射流体被引导到纸幅的背面以加热纸幅并将处理液体分散在整个幅材上。 将纸幅在干燥台中加热干燥。

    Method for producing organic insulating film
    18.
    发明申请
    Method for producing organic insulating film 有权
    有机绝缘膜的制造方法

    公开(公告)号:US20010036511A1

    公开(公告)日:2001-11-01

    申请号:US09793095

    申请日:2001-02-27

    发明人: Yuji Yoshida

    IPC分类号: B05D003/02 B05D003/04

    摘要: A method for producing an organic insulating film comprising the steps of coating a solution containing a dissolved organic resin having a structure of the following formula (1) on a substrate, and exposing the coated substrate at a temperature of 200null C. or more under an atmosphere of an oxygen partial pressure of 0.01 atm or less, 1 wherein each of R1 to R8 is independently selected from the group consisting of a hydrogen atom, fluorine atom, chlorine atom, bromine atom and iodine atom, alkyl groups having 1 to 10 carbon atoms, functional groups containing a double bond having 2 to 10 carbon atoms, functional groups containing a triple bond having 2 to 10 carbon atoms, a methoxy group, ethoxy group and propoxy group.

    摘要翻译: 一种制造有机绝缘膜的方法,包括以下步骤:将具有下式(1)结构的溶解有机树脂的溶液涂布在基材上,并在200℃以上的温度下使涂布的基材 氧分压为0.01atm以下的气氛,其中R 1至R 8各自独立地选自氢原子,氟原子,氯原子,溴原子和碘原子,具有1至10个碳原子的烷基 原子,含有2〜10个碳原子的双键的官能团,含有2〜10个碳原子的三键的官能团,甲氧基,乙氧基和丙氧基。

    Carrying method, carrying apparatus, coating method and coating material manufacturing method
    19.
    发明申请
    Carrying method, carrying apparatus, coating method and coating material manufacturing method 审中-公开
    承载方式,承载装置,涂装方法和涂料制造方法

    公开(公告)号:US20040175508A1

    公开(公告)日:2004-09-09

    申请号:US10792520

    申请日:2004-03-02

    申请人: TDK Corporation

    发明人: Hideki Tanaka

    IPC分类号: B05D001/28 B05D003/04

    摘要: Disclosed are carrying method and a carrying apparatus capable of carrying a flexible member to be carried in a way that flattens it. Further disclosed are a coating method of uniformly stably coating the thus flattened flexible member as a flexible support member with a coating liquid and a manufacturing method of manufacturing a coating material having uniform coating layer thickness by this coating method. In the carrying method and the carrying apparatus, a web is corrugated by deforming the web in a widthwise direction, a first guide roll disposed downstream thereof stretches the corrugation and thus corrects the web, thereby carrying the web in a flattened state. In the coating method and the coating material manufacturing method, downstream of the first guide roll, the corrugation is corrected, and the flat web is coated with a coating liquid.

    摘要翻译: 本发明公开了一种携带方法和携带装置,其能够以使其变平的方式承载待携带的柔性构件。 进一步公开了一种涂布方法,其通过涂布液均匀地稳定地涂布作为具有均匀涂层厚度的涂层材料的涂布液体的这种平坦化柔性构件作为具有涂布液的柔性支撑构件。 在承载方法和搬送装置中,通过使幅材在宽度方向上变形而将卷筒纸变形成波纹状,设置在其下游的第一引导辊延伸波纹,从而校正幅材,从而将幅材带入扁平状态。 在涂布方法和涂覆材料制造方法中,在第一导辊的下游,对波纹进行校正,并且平面网涂覆有涂布液。

    Nitrogen passivation of interface states in SiO2/SiC structures
    20.
    发明申请
    Nitrogen passivation of interface states in SiO2/SiC structures 有权
    SiO2 / SiC结构中界面态的氮钝化

    公开(公告)号:US20040101625A1

    公开(公告)日:2004-05-27

    申请号:US10640934

    申请日:2003-08-14

    IPC分类号: B05D003/04

    摘要: A nitrided oxide layer on a silicon carbide layer is processed by annealing the nitrided oxide layer in a substantially oxygen-free nitrogen containing ambient. The anneal may be carried out at a temperature of greater than about 900null C., for example, a temperature of about 1100null C., a temperature of about 1200null C. or a temperature of about 1300null C. Annealing the nitrided oxide layer may be carried out at a pressure of less than about 1 atmosphere, for example, at a pressure of from about 0.01 to about 1 atm or, in particular, at a pressure of about 0.2 atm. The nitrided oxide layer may be an oxide layer that is grown in a N2O and/or NO containing ambient, that is annealed in a N2O and/or NO containing ambient or that is grown and annealed in a N2O and/or NO containing ambient.

    摘要翻译: 通过在基本上无氧的含氮环境中退火氮化氧化物层来处理碳化硅层上的氮化氧化物层。 退火可以在大于约900℃的温度下进行,例如约1100℃的温度,约1200℃的温度或约1300℃的温度。退火氮化 氧化物层可以在小于约1大气压的压力下进行,例如在约0.01至约1atm的压力下,或特别是约0.2atm的压力下进行。 氮化氧化物层可以是在N 2 O和/或含NO的环境中生长的氧化物层,其在N 2 O和/或含NO的环境中退火或者在N 2 O和/或含NO的环境中生长和退火。