公开(公告)号：US06737417B2

公开(公告)日：2004-05-18

申请号：US10149752

申请日：2002-06-13

申请人： JaeChon Jo ,  HeeAn Kwon ,  HyunSuk Lim ,  JaeYoung Choi ,  Kazumi Morikawa ,  Yoshitake Kanbe ,  Masahiro Nishimoto ,  MyungHwa Kim ,  Yoshikazu Nishimura

发明人： JaeChon Jo ,  HeeAn Kwon ,  HyunSuk Lim ,  JaeYoung Choi ,  Kazumi Morikawa ,  Yoshitake Kanbe ,  Masahiro Nishimoto ,  MyungHwa Kim ,  Yoshikazu Nishimura

IPC分类号： C07J100

CPC分类号： C07C59/64 ,  C07C51/38 ,  C07C59/54 ,  C07C59/56

摘要： The present invention provides a compound consisting of a moiety and a group chemically bonded to said moiety, wherein said moiety contains a compound having low activity following oral administration or its parent scaffold and said group has the following general formula (1): in which R1 represents a hydrogen atom, etc., R2 represents a C1-C7 halogenoalkyl group, etc., m represents an integer of 2 to 14, and n represents an integer of 2 to 7, or enantiomers of the compound, or hydrates or pharmaceutically acceptable salts of the compound or enantiomers thereof. The above compound is advantageous in pharmaceutical use because the group of general formula (1) allows compounds such as anti-estrogenic ones to show a significantly increased activity following oral administration when attached to the parent scaffolds of the compounds.

摘要翻译： 本发明提供由部分和化学键合到所述部分的基团组成的化合物，其中所述部分含有口服后具有低活性的化合物或其母体支架，并且所述基团具有以下通式（1）：其中R 1表示 氢原子等，R2表示C1-C7卤代烷基等，m表示2〜14的整数，n表示2〜7的整数，或该化合物的对映异构体或其水合物或药学上可接受的盐 其化合物或其对映异构体。 上述化合物在药物用途中是有利的，因为通式（1）的基团允许化合物如抗雌激素的化合物在连接到化合物的母体支架上时在口服给药后显示出显着增加的活性。

公开(公告)号：US08915540B2

公开(公告)日：2014-12-23

申请号：US13983512

申请日：2012-02-17

申请人： Yoshikazu Nishimura ,  Tsuyoshi Kondo ,  Yasunari Futamura ,  Kazumi Shimizu ,  Kosuke Kojima ,  Seiji Nakano

发明人： Yoshikazu Nishimura ,  Tsuyoshi Kondo ,  Yasunari Futamura ,  Kazumi Shimizu ,  Kosuke Kojima ,  Seiji Nakano

IPC分类号： B60R13/07 ,  B62D25/04 ,  B62D25/06

CPC分类号： B62D25/06 ,  B62D25/04

摘要： Provided is a vehicle upper structure which is capable of increasing, in a simple manner, a section modulus (resistive force) against a bending moment to be imposed on a roof reinforcement by a swinging phenomenon of a gusset occurring when a side impact load input into a center pillar and a roof side rail member is applied to the roof reinforcement from the gusset during a vehicle side impact event, to allow the load to be effectively dispersed to the roof reinforcement. The vehicle upper structure comprises a roof side rail member 4, a roof reinforcement 15 and a gusset 30, wherein an end of the gusset 30 on a side fastened to the roof reinforcement 15 has a shape which inclines with respect to a line L1 oriented in a vehicle front-rear direction, in top plan view.

摘要翻译： 提供了一种车辆上部结构，其能够以简单的方式增加相对于施加在屋顶加强件上的弯矩的截面模量（阻力），该侧弯矩可以通过在侧向冲击载荷输入时发生的角撑板的摆动现象 在车辆侧面碰撞事件期间，中心支柱和车顶侧轨构件从角撑板施加到车顶加强件，以允许负载被有效地分散到车顶加强件。 车辆上部结构包括屋顶侧轨道构件4，屋顶加强件15和角撑板30，其中角撑板30的固定在屋顶加强件15上的一侧的端部具有相对于定向在其上的线L1倾斜的形状 车辆前后方向，俯视图。

公开(公告)号：US08860189B2

公开(公告)日：2014-10-14

申请号：US13520357

申请日：2010-02-17

申请人： Yoshikazu Nishimura ,  Hirofumi Yamamoto ,  Takeyoshi Uchino

发明人： Yoshikazu Nishimura ,  Hirofumi Yamamoto ,  Takeyoshi Uchino

IPC分类号： H01L29/66 ,  H01L29/06 ,  H01L29/868

CPC分类号： H01L29/868 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0638 ,  H01L29/0692 ,  H01L29/6609

摘要： Provided is a PIN diode that can suppress thermal destruction from occurring at the time of a reverse bias exceeding a breakdown voltage by current concentration on a curved part of an anode region. The PIN diode is configured to have: a semiconductor substrate 11 that includes an N+ semiconductor layer 1 and an N− semiconductor layer 2; a cathode electrode 18 that is formed on an outer surface of the N+ semiconductor layer 1; a main anode region 16, a separated anode region 15, and an anode connecting region that are formed by selectively diffusing P-type impurities from an outer surface of the N− semiconductor layer 2; and an anode electrode 17 that is formed on the main anode region 16.

摘要翻译： 提供一种PIN二极管，其可以抑制在阳极区域的弯曲部分上的电流集中在超过击穿电压的反向偏压时发生热破坏。 PIN二极管被配置为具有：包括N +半导体层1和N半导体层2的半导体衬底11; 形成在N +半导体层1的外表面上的阴极18; 通过从N半导体层2的外表面选择性地扩散P型杂质而形成的主阳极区域16，分隔阳极区域15和阳极连接区域; 以及形成在主阳极区域16上的阳极电极17。

公开(公告)号：US07732218B2

公开(公告)日：2010-06-08

申请号：US11905605

申请日：2007-10-02

申请人： Shino Takeda ,  Masae Yukawa ,  Yoshikazu Nishimura

发明人： Shino Takeda ,  Masae Yukawa ,  Yoshikazu Nishimura

IPC分类号： G01N1/00 ,  G01N1/28

CPC分类号： G01N23/2202 ,  G01N1/286 ,  Y10T436/10 ,  Y10T436/25 ,  Y10T436/25875

摘要： There is provided a method for preparing an analytical standard used for microbeam X-ray fluorescence analysis which includes: a mixing step in which an element is added to a base material, and the base material and the element are mixed by stirring to obtain a mixed solution; a deaeration step in which the mixed solution is deaerated; a freeze step in which the mixed solution is slowly frozen; and a cutting step in which a thin section is cut out from the frozen mixed solution. In order to surely remove bubbles from the mixed solution, the deaeration step may contain a stationary step in which the mixed solution is allowed to stand still at room temperature; or the stationary step includes a removal step in which gas contained in the mixed solution which is allowed to stand still is removed with a suction apparatus.

摘要翻译： 提供了一种用于制备用于微束X射线荧光分析的分析标准的方法，其包括：混合步骤，其中将元素添加到基材中，并且通过搅拌将基材和元素混合以获得混合 解; 脱气步骤，其中混合溶液脱气; 冷冻步骤，其中混合溶液缓慢冷冻; 以及切割步骤，其中从冷冻混合溶液中切出薄片。 为了确保从混合溶液中除去气泡，脱气步骤可以包含固定步骤，其中使混合溶液在室温下静置; 或者固定步骤包括除去步骤，其中使用抽吸装置除去容纳在静止的混合溶液中的气体。

公开(公告)号：US06639453B2

公开(公告)日：2003-10-28

申请号：US09794698

申请日：2001-02-26

申请人： Yoshikazu Nishimura ,  Fuminobu Ono

发明人： Yoshikazu Nishimura ,  Fuminobu Ono

IPC分类号： G05F110

CPC分类号： G05F3/205

摘要： An active bias circuit having a combined configuration of the Wilson and Widlar current source configurations is provided, which makes it possible to set the output bias voltage at approximately 0V even if a reference voltage applied to generate a reference current does not reach 0V. This circuit comprises cascode-connected first and second transistors, cascode-connected third and fourth transistors, and a diode with a specific forward voltage drop generated by a current flowing through the diode itself. The absolute value of the output bias voltage is decreased by the value of the forward voltage drop of the diode compared with the case where the diode is not provided. The diode is provided between the source/emitter of the third transistor and the drain/collector of the fourth transistor, or between the connection point of the third and fourth transistors and the output terminal, or the gates/bases of the first and third transistors.

摘要翻译： 提供了具有Wilson和Widlar电流源配置的组合配置的有源偏置电路，这使得即使施加用于产生参考电流的参考电压没有达到0V，也可以将输出偏置电压设置在大约0V。 该电路包括共源共栅连接的第一和第二晶体管，共源共栅的第三和第四晶体管，以及具有由流过二极管本身的电流产生的特定的正向压降的二极管。 与未设置二极管的情况相比，输出偏置电压的绝对值减小二极管正向压降的值。 二极管设置在第三晶体管的源极/发射极与第四晶体管的漏极/集电极之间，或第三和第四晶体管的连接点与输出端之间，或第一和第三晶体管的栅极/基极之间 。

公开(公告)号：US06515538B2

公开(公告)日：2003-02-04

申请号：US09837730

申请日：2001-04-18

申请人： Fuminobu Ono ,  Yoshikazu Nishimura

发明人： Fuminobu Ono ,  Yoshikazu Nishimura

IPC分类号： G05F110

CPC分类号： G05F3/262 ,  G05F3/205

摘要： An active bias circuit having a combined configuration of the Wilson and Widlar current source configurations is provided, which makes it possible to set the output bias voltage at approximately zero (OV) even if a reference voltage applied to generate a reference current does not reach OV. This circuit comprises cascode-connected first and second transistors cascode-connected third and fourth transistors, and a resistor with a specific voltage drop generated by a current flowing through the same. The absolute value of the output bias voltage is decreased by the value of the voltage drop of the resistor compared with the case where the resistor is not provided. The resistor is provided between the gates/bases of the first and third transistors, or between the gate/base and source/emitter of the fourth transistor.

摘要翻译： 提供了具有Wilson和Widlar电流源配置的组合配置的主动偏置电路，这使得即使用于产生参考电流的参考电压没有达到OV，也可以将输出偏置电压设置在大约为零（0V） 。 该电路包括共源共栅连接的第一和第二晶体管共源共栅三极管和第四晶体管，以及具有由流过其的电流产生的特定电压降的电阻器。 与未设置电阻器的情况相比，输出偏置电压的绝对值减小电阻器的电压降值。 电阻器设置在第一和第三晶体管的栅极/基极之间，或第四晶体管的栅极/基极和源极/发射极之间。

公开(公告)号：US06331553B1

公开(公告)日：2001-12-18

申请号：US09331733

申请日：1999-06-24

申请人： Toru Esaki ,  Toshihiko Makino ,  Yoshikazu Nishimura ,  Toshiaki Nagafuji

发明人： Toru Esaki ,  Toshihiko Makino ,  Yoshikazu Nishimura ,  Toshiaki Nagafuji

IPC分类号： C07D21302

CPC分类号： C07D213/74 ,  C07C211/56 ,  C07C217/92 ,  C07C271/20 ,  C07D213/76 ,  C07D213/80 ,  C07D213/82 ,  C07D231/12 ,  C07D233/56 ,  C07D239/42 ,  C07D249/08 ,  C07D263/48 ,  C07D277/42

摘要： Compounds represented by the general formula (1): (where R1 and R2 are typically a hydrogen atom; R3 and R4 are typically a hydrogen atom or a lower alkyl group; R5 is typically a hydrogen atom; X1, X2, X3 and X4 are typically a hydrogen atom or a lower alkoxy group; A is typically an optionally substituted pyridine ring; m and n are each 0 or 1) have an NOS inhibiting activity and are useful as therapeutics of cerebrovascular diseases and other pharmaceuticals.

摘要翻译： 由通式（1）表示的化合物（其中R 1和R 2通常为氢原子; R 3和R 4通常为氢原子或低级烷基; R 5通常为氢原子; X 1，X 2，X 3和X 4为 通常为氢原子或低级烷氧基; A通常为任选取代的吡啶环; m和n各自为0或1）具有NOS抑制活性，可用作脑血管疾病和其它药物的治疗剂。

公开(公告)号：US6150715A

公开(公告)日：2000-11-21

申请号：US123448

申请日：1998-07-28

申请人： Seiji Ichikawa ,  Takeshi Umemoto ,  Kazunari Sato ,  Kunihiko Tsubota ,  Yoshikazu Nishimura ,  Toshiaki Nishibe ,  Kazuhiro Tahara ,  Masato Suga ,  Toru Kitakoga ,  Tatsuya Miya ,  Keita Okahira

发明人： Seiji Ichikawa ,  Takeshi Umemoto ,  Kazunari Sato ,  Kunihiko Tsubota ,  Yoshikazu Nishimura ,  Toshiaki Nishibe ,  Kazuhiro Tahara ,  Masato Suga ,  Toru Kitakoga ,  Tatsuya Miya ,  Keita Okahira

IPC分类号： H01L23/29 ,  H01L23/495 ,  H01L23/50 ,  H01L23/28 ,  H01L23/48

CPC分类号： H01L23/49568 ,  H01L23/49503 ,  H01L2224/05554 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L24/48 ,  H01L24/49 ,  H01L2924/00014 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/1532 ,  H01L2924/181

摘要： A semiconductor device of the present invention comprises a semiconductor pellet, a radiation plate mounted with the semiconductor pellet, a plurality of lead terminals electrically connected with the semiconductor pellet, and a resin member for encapsulating the above items. The resin member has a first surface and a second surface, and the radiation plate has a first portion exposed to the outside from the first surface of the resin member and a second portion exposed to the outside from the second surface of the resin member.

摘要翻译： 本发明的半导体器件包括半导体芯片，安装有半导体芯片的辐射板，与半导体芯片电连接的多个引线端子和用于封装上述物品的树脂部件。 树脂构件具有第一表面和第二表面，并且辐射板具有从树脂构件的第一表面暴露于外部的第一部分和从树脂构件的第二表面暴露于外部的第二部分。

公开(公告)号：US20120299164A1

公开(公告)日：2012-11-29

申请号：US13520361

申请日：2010-02-16

申请人： Yoshikazu Nishimura ,  Hirofumi Yamamoto ,  Takeyoshi Uchino

发明人： Yoshikazu Nishimura ,  Hirofumi Yamamoto ,  Takeyoshi Uchino

IPC分类号： H01L29/868

CPC分类号： H01L29/8611 ,  H01L29/0619 ,  H01L29/0638

摘要： A PIN diode having improved avalanche resistance is provided. The PIN diode includes: a semiconductor substrate 11 that includes an N+ semiconductor layer 1, and an N− semiconductor layer 2; a P-type anode region 15 that is formed by selective impurity diffusion into an outer surface of the N− semiconductor layer 2; and an anode electrode 17 that is conducted to the anode region 15 through a contact region 17c in the anode region 15. The anode region 15 has a substantially rectangular outer edge of which four sides are adapted to be linear parts B2 and four vertices are adapted to be curved parts B1, and outside the contact region 17c, N-type non-diffusion corner regions 16 that extend along the curved parts B1 are respectively formed.

摘要翻译： 提供了具有改善的雪崩阻力的PIN二极管。 PIN二极管包括：包括N +半导体层1和N半导体层2的半导体衬底11; 通过选择性杂质扩散到N半导体层2的外表面中形成的P型阳极区域15; 以及通过阳极区域15中的接触区域17c而导引到阳极区域15的阳极电极17.阳极区域15具有基本上矩形的外边缘，其四条边适于线性部分B2，并且四个顶点被适配 作为弯曲部分B1，并且在接触区域17c的外部，分别形成沿着弯曲部分B1延伸的N型非扩散角区域16。

公开(公告)号：US08056671B2

公开(公告)日：2011-11-15

申请号：US12247253

申请日：2008-10-08

申请人： Makoto Ikegami ,  Yukiichirou Shimada ,  Noritaka Sakiyama ,  Noriyoshi Sahashi ,  Kota Matsue ,  Chikara Ishihara ,  Shinya Matsumoto ,  Yoshikazu Nishimura ,  Yoshiaki Murakami ,  Masamitsu Tanaka ,  Ken Ueki

发明人： Makoto Ikegami ,  Yukiichirou Shimada ,  Noritaka Sakiyama ,  Noriyoshi Sahashi ,  Kota Matsue ,  Chikara Ishihara ,  Shinya Matsumoto ,  Yoshikazu Nishimura ,  Yoshiaki Murakami ,  Masamitsu Tanaka ,  Ken Ueki

IPC分类号： B60K13/04 ,  F01N3/00

CPC分类号： F01N13/1822 ,  B60K13/04 ,  B60K15/063 ,  F01N3/2066 ,  F01N2340/04 ,  F01N2610/1406 ,  Y02A50/2325

摘要： An exhaust-gas purification device disposition structure of a vehicle, comprises a fuel tank with a fuel supply port which is disposed so as to be open to an outside of a vehicle compartment, and a urea tank to accommodate urea water solution as deoxidizer to purify exhaust gas. The urea tank is disposed outside the vehicle compartment, and a pouring port of the urea tank is provided inside the vehicle compartment. Accordingly, the urea water solution can be surely prevented from entering into the vehicle compartment even in case of the breakage of the urea tank, and the mistake of supplying the wrong liquid into the wrong supply (pouring) port tank which may be made by confusing the ports can be avoided.

摘要翻译： 车辆的废气净化装置配置结构包括燃料箱，其具有设置成向车厢外部开口的燃料供给口，以及尿素罐，以容纳作为脱氧剂的尿素水溶液净化 废气 尿素槽设置在车厢外部，尿素箱的倾倒口设置在车厢内部。 因此，即使在尿素罐破损的情况下也能够可靠地防止尿素水溶液进入车厢，并且错误地将错误的液体供应到错误的供应（倾倒）港口罐中，这可能是由混淆造成的 可以避免端口。