Array substrate, liquid crystal display panel and liquid crystal display device

    公开(公告)号:US10088726B2

    公开(公告)日:2018-10-02

    申请号:US15208928

    申请日:2016-07-13

    Abstract: The array substrate, the liquid crystal display panel and the liquid crystal display device of the present disclosure are designed to from the MIS storage capacitor by the P—Si semiconductor layer, the first metal layer and the insulating layer between above or the P—Si semiconductor layer, the second metal layer and the dielectric spacer layer between above, when one side of the first metal layer or the second metal layer receiving the negative gray voltage, the P—Si in the P—Si semiconductor layer will gather to form the hole, when receiving the positive gray voltage, will form the depletion layer on the upper layer of the P—Si to reduce the capacity of the MIS storage capacitor, thereby reducing the difference of the capacitance when the MIS storage capacitor in the positive and negative gray voltage, improving the flicker phenomena and ensuring the display effect.

    GOA circuit
    12.
    发明授权

    公开(公告)号:US09959830B2

    公开(公告)日:2018-05-01

    申请号:US15026256

    申请日:2016-02-24

    Abstract: The present invention provides a GOA circuit, comprising a forward-backward scan control module, an output module, an output pull-down module, a node control module, a second node signal input module, a second node signal control module, a voltage stabilizing module and a second capacitor; the forward scan of the circuit is controlled with the ninth and the tenth thin film transistors, and the signal input of the second node is controlled with the first and the eleventh thin film transistors, and the mutual control of the first node and the second node are achieved with the second, the fourth and the fifth thin film transistors, and meanwhile, as the GOA circuit applies to a display of dual side drive interlaced scan structure, the GOA circuits of the two sides can respectively receive four different clock signals to reduce the loading of the signal line of the GOA circuit.

    GOA CIRCUIT
    14.
    发明申请

    公开(公告)号:US20180068628A1

    公开(公告)日:2018-03-08

    申请号:US15026256

    申请日:2016-02-24

    Abstract: The present invention provides a GOA circuit, comprising a forward-backward scan control module, an output module, an output pull-down module, a node control module, a second node signal input module, a second node signal control module, a voltage stabilizing module and a second capacitor; the forward scan of the circuit is controlled with the ninth and the tenth thin film transistors, and the signal input of the second node is controlled with the first and the eleventh thin film transistors, and the mutual control of the first node and the second node are achieved with the second, the fourth and the fifth thin film transistors, and meanwhile, as the GOA circuit applies to a display of dual side drive interlaced scan structure, the GOA circuits of the two sides can respectively receive four different clock signals to reduce the loading of the signal line of the GOA circuit.

    GOA driving circuits, TFT display panels and display devices

    公开(公告)号:US09905182B2

    公开(公告)日:2018-02-27

    申请号:US14915222

    申请日:2016-01-05

    Abstract: A GOA driving circuit, a TFT display panel and a display device are disclosed. The GOA driving circuit includes: an input module configured for outputting first control signals in accordance with the received display scanning signals and the touch scanning signals; an output module configured for outputting the first output control signals in accordance with the first control signals and the first clock signals; a pull-down module configured for outputting pull-down signals in accordance with the first control signals, the second control signals and the low level signals; and a pull-down maintaining module configure for outputting the second output control signals in accordance with the pull-down signals, the high level signals, and the first clock signals. The DC source is adopted to charge/discharge Qn to keep Qn at a reasonable level, and the transfer capability is enhanced. In addition, the forward scanning and the backward scanning may be implemented.

    GOA CIRCUIT FOR IN-CELL TYPE TOUCH DISPLAY PANEL

    公开(公告)号:US20170102805A1

    公开(公告)日:2017-04-13

    申请号:US15009803

    申请日:2016-01-28

    CPC classification number: G06F3/0412 G06F3/044 G06F2203/04103

    Abstract: The invention discloses a GOA circuit for in-cell type touch display panel; during black screen, using a first global control signal to make a thirteenth N-type TFT conductive to raise a scan driving signal of each stage to high, using the first global control signal to make a twelfth N-type TFT conductive to pull down a voltage level of a second node, and pulling down a voltage level of a first node to avoid ineffective all-gate-on function; using a reset signal and a fourteenth N-type TFT to reset the second node to realize the normal output after awaking from black screen; during stop, setting a negative voltage as a pulse signal having same amplitude, phase and frequency as a touch signal, using a second global control signal to make the fifteenth N-type TFT conductive to output the negative voltage in pulse form to reduce cross-talk between the touch signal and a scan output end.

    Array substrate, liquid crystal display panel and liquid crystal display device

    公开(公告)号:US10324348B2

    公开(公告)日:2019-06-18

    申请号:US16127767

    申请日:2018-09-11

    Abstract: The array substrate, the liquid crystal display panel and the liquid crystal display device of the present disclosure are designed to form the MIS storage capacitor by the P—Si semiconductor layer, the first metal layer and the insulating layer between above or the P—Si semiconductor layer, the second metal layer and the dielectric spacer layer between above, when one side of the first metal layer or the second metal layer receiving the negative gray voltage, the P—Si in the P—Si semiconductor layer will gather to form the hole, when receiving the positive gray voltage, will form the depletion layer on the upper layer of the P—Si to reduce the capacity of the MIS storage capacitor, thereby reducing the difference of the capacitance when the MIS storage capacitor in the positive and negative gray voltage, improving the flicker phenomena and ensuring the display effect.

    Array substrate, liquid crystal display panel and liquid crystal display device

    公开(公告)号:US10288967B2

    公开(公告)日:2019-05-14

    申请号:US16127704

    申请日:2018-09-11

    Abstract: The array substrate, the liquid crystal display panel and the liquid crystal display device of the present disclosure are designed to form the MIS storage capacitor by the P—Si semiconductor layer, the first metal layer and the insulating layer between above or the P—Si semiconductor layer, the second metal layer and the dielectric spacer layer between above, when one side of the first metal layer or the second metal layer receiving the negative gray voltage, the P—Si in the P—Si semiconductor layer will gather to form the hole, when receiving the positive gray voltage, will form the depletion layer on the upper layer of the P—Si to reduce the capacity of the MIS storage capacitor, thereby reducing the difference of the capacitance when the MIS storage capacitor in the positive and negative gray voltage, improving the flicker phenomena and ensuring the display effect.

    Array substrate, liquid crystal display panel and liquid crystal display device

    公开(公告)号:US10268095B2

    公开(公告)日:2019-04-23

    申请号:US16126078

    申请日:2018-09-10

    Abstract: The array substrate, the liquid crystal display panel and the liquid crystal display device of the present disclosure are designed to from the MIS storage capacitor by the P-Si semiconductor layer, the first metal layer and the insulating layer between above or the P-Si semiconductor layer, the second metal layer and the dielectric spacer layer between above, when one side of the first metal layer or the second metal layer receiving the negative gray voltage, the P-Si in the P-Si semiconductor layer will gather to form the hole, when receiving the positive gray voltage, will form the depletion layer on the upper layer of the P-Si to reduce the capacity of the MIS storage capacitor, thereby reducing the difference of the capacitance when the MIS storage capacitor in the positive and negative gray voltage, improving the flicker phenomena and ensuring the display effect.

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