Gate driver on array circuit based on low temperature poly-silicon semiconductor thin film transistor

    公开(公告)号:US10403219B2

    公开(公告)日:2019-09-03

    申请号:US15312040

    申请日:2016-06-13

    Inventor: Yafeng Li

    Abstract: The present disclosure proposes a GOA circuit having GOA units connected in a serial. Each GOA unit includes a scan-control module, an output module, a pull-down module, and an output adjusting module. By using the output adjusting module formed by a ninth TFT, a tenth TFT, an eleventh TFT, and a twelfth TFT, the voltage level of a fourth node transits between the high voltage level and the low voltage level with the second clock signal in either forward scanning or backward scanning. Compared with the conventional technology where the high and low voltage levels of the output terminal are mainly realized using the second TFT, the GOA circuit realizes that the output ability of the output terminal enhances and the charging capacity of in-plane pixels upgrades in the same period of time to improve the display effect of the liquid crystal panel.

    Liquid crystal panel and pixel structure thereof

    公开(公告)号:US10156756B2

    公开(公告)日:2018-12-18

    申请号:US14907865

    申请日:2016-01-12

    Abstract: A liquid crystal panel and a pixel structure thereof are described. The pixel structure has a common electrode, a protecting layer, a plurality of pixel electrodes, and a plurality of first channels. The protecting layer is located on the common electrode; the pixel electrodes are located on the protecting layer; and the first channels are located between the neighboring pixel electrodes and pass through the protecting layer, so that the first channels expose a top surface of the common electrode.

    Method for manufacturing display device

    公开(公告)号:US10146080B1

    公开(公告)日:2018-12-04

    申请号:US15738031

    申请日:2017-11-30

    Abstract: The present invention provides a method for manufacturing a display device includes providing an array substrate with a plurality of pixel unit areas formed on a surface thereof; defining a dividing line; dividing the pixel unit areas to a pixel calculating area, a predetermined displaying area, and a predetermined shielding area, and dividing the pixel calculating area to a first part and a second part by the dividing line; calculating areas of sub pixels according to light extraction efficiencies and effective light extraction areas of the sub pixels; forming a shielding layer according to the areas of the sub pixels.

    Gate driver on array circuit based on low temperature poly-silicon semiconductor thin film transistors

    公开(公告)号:US10126621B2

    公开(公告)日:2018-11-13

    申请号:US15126418

    申请日:2016-06-30

    Inventor: Yafeng Li

    Abstract: The present disclosure proposes a GOA circuit based on LTPS TFTs. A ninth TFT is introduced to adjust the high and low voltage levels imposed on the second node P(n). The ninth TFT includes a gate and a source both electrically connected to the second node P(n) and a drain electrically connected to a second clock signal. Such designs make it possible that the level of the second node P(n) is pulled down according to a certain frequency when an output terminal G(n) keeps the low voltage level. So the second node P(n) does not need to keep the high voltage level all the time in the present invention. Also, the fourth and the seventh transistors T4 and T7 do not have the problem of a threshold voltage shift due to a long working time.

    GOA CIRCUIT
    16.
    发明申请
    GOA CIRCUIT 审中-公开

    公开(公告)号:US20180218695A1

    公开(公告)日:2018-08-02

    申请号:US15506240

    申请日:2016-12-30

    Inventor: Yafeng Li

    Abstract: The present invention relates to a GOA circuit. The GOA circuit comprises: a first thin film transistor (T1) to a fourteenth thin film transistor (T14), a first capacitor (C1) and a second capacitor (C2). The present invention adds a control unit consisted of thin film transistors (T9-T14) on the basis of the GOA circuit structure according to prior art, and a set of control signals (Select1, Select2) of which phases are opposite is introduced. The main function is to divide the gate output of the GOA circuit into two. In some special display mode, the frequency corresponded with Data signal will be halved, and the corresponding drive power consumption will be decreased. The present invention provides a GOA circuit, which can effectively reduce the layout space occupied by the GOA circuit for having a certain help to the development of the narrow frame technology.

    GOA circuit based on the LTPS and a display apparatus

    公开(公告)号:US09805675B2

    公开(公告)日:2017-10-31

    申请号:US15012787

    申请日:2016-02-01

    Inventor: Yafeng Li Mang Zhao

    Abstract: The disclosure discloses a GOA circuit based on the LTPS, including a modulation circuit; a charging circuit; an input signal terminal and an output signal terminal. The modulation circuit and the charging circuit are connected to the input signal terminal and the output signal terminal to make the modulation circuit and the charging circuit in parallel connection, and the charging circuit is used to charge the output scanning signal during the mutation process to increase the mutation speed of the output scanning signal. Wherein the charging circuit is a switch including a control terminal, a first terminal, and a second terminal; the input signal terminal is connected to the first terminal of the charging circuit. The output signal terminal is connected to the second terminal and the control terminal of the charging circuit separately. A display apparatus including the GOA circuit based on the LTPS is also provided.

    TFT ARRAY SUBSTRATE AND LCD PANEL
    19.
    发明申请

    公开(公告)号:US20210124206A1

    公开(公告)日:2021-04-29

    申请号:US16308483

    申请日:2018-09-27

    Abstract: The invention provides a TFT array substrate and LCD panel. the TFT array substrate comprises a first metal layer, a first interlayer insulating layer, a second metal layer, a second interlayer insulating layer and a third metal layer sequentially disposed above the substrate. The first, second and third metal layers comprise a plurality of first, second and third fanout lines in the fanout line area, respectively; two of the first, second, and third fanout lines are connected to the data lines, and the other is connected with the touch line; because the first interlayer insulating layer is disposed between the first and second fanout lines, and the second interlayer insulating layer is disposed between the third and second fanout lines, the first, second and third fanout lines can overlap, which can effectively reduce the fanout line area and help to achieve a narrow border.

    Gate driving circuit, driving method thereof, and display device

    公开(公告)号:US10803809B2

    公开(公告)日:2020-10-13

    申请号:US15327304

    申请日:2016-12-29

    Inventor: Yafeng Li

    Abstract: Disclosed are a gate driving circuit, a driving method thereof, and a display device which comprises the gate driving circuit. In the gate driving circuit, the Qn node in the nth stage circuit is precharged when an output signal of a Qn−1 node in a previous stage driving circuit and an output signal of a Qn+1 node in a next stage driving circuit are both in a high-level state. Both the Qn−1 node and the Qn+1 node are at low levels when the gate driving circuit is in an All Gate On display state, and thus a possibility of current leakage from the Qn node can be substantially reduced.

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