ARRAY SUBSTRATE AND DISPLAY PANEL
    16.
    发明公开

    公开(公告)号:US20240204000A1

    公开(公告)日:2024-06-20

    申请号:US17905175

    申请日:2022-08-17

    CPC classification number: H01L27/1222

    Abstract: An array substrate and a display panel are provided. The array substrate includes an active layer. The active layer includes a channel portion and a doped portion. The doped portion includes a first doped layer and a second doped layer. The channel portion includes a first channel portion and a second channel portion. The first channel portion is connected to the first doped layer. The second channel portion is connected to the second doped layer. A part of the second channel portion overlaps with a part of the first doped layer, thus, a step-laminated structure is formed, and an overall performance of the device is improved.

    Display panel and display device
    18.
    发明授权

    公开(公告)号:US11886064B2

    公开(公告)日:2024-01-30

    申请号:US16963787

    申请日:2020-06-23

    Inventor: Dewei Song Fei Ai

    CPC classification number: G02F1/133354 G02F1/1368 H01L27/1248

    Abstract: The present application provides a display panel and a display device. The display panel includes an array substrate, a color filter substrate, and a colloid layer. The array substrate includes a thin film transistor layer and a passivation layer. The passivation layer includes at least one first connection element. The color filter substrate is disposed opposite to the array substrate. The colloid layer is arranged between the passivation layer and the color filter substrate, the colloid layer is connected to the first connection element, and the colloid layer and the first connection element couple the array substrate to the color filter substrate.

    TFT SUBSTRATE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20210098582A1

    公开(公告)日:2021-04-01

    申请号:US16097838

    申请日:2018-09-14

    Abstract: The present invention teaches a TFT substrate manufacturing method and a TFT substrate. The method configures contact region vias in the source/drain contact regions at two ends of the active layer, provides buffer layer troughs in the buffer layer beneath the contact region vias, and forms undercut structure between the buffer layer troughs and the active layer around the contact region vias, thereby separating the transparent conductive layer at the contact region vias, and extending the source/drain electrodes to contact the source/drain contact regions of the active layer from below through the buffer layer troughs. The present invention therefore prevents the occurrence of Schottky contact barrier resulted from the contact between poly-Si and ITO in the 7-mask process by letting the source/drain electrodes to directly contact and form ohmic contact with the source/drain contact regions of the active layer, thereby enhancing the electronic mobility of TFT devices.

    Method of manufacturing array substrate and array substrate

    公开(公告)号:US10784290B1

    公开(公告)日:2020-09-22

    申请号:US16475684

    申请日:2019-04-30

    Inventor: Fei Al Dewei Song

    Abstract: A method of manufacturing an array substrate and an array substrate are provided. The method of manufacturing the array substrate includes forming a first metal layer on a substrate, wherein the first metal layer includes a plurality of first metal lines and a plurality of intermittent second metal lines, forming an interlayer dielectric insulating layer on the substrate and the first metal layer, and forming an intermittent data line on the interlayer dielectric insulating layer and the first metal layer, wherein the intermittent data line contacts the two ends of each of the intermittent second metal lines through the via holes.

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