公开(公告)号：US20230008994A1

公开(公告)日：2023-01-12

申请号：US17568926

申请日：2022-01-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-I Lin ,  Ming-Ho Lin ,  Da-Yuan Lee ,  Chi On Chui

IPC: H01L27/088 ,  H01L29/66 ,  H01L29/78 ,  H01L21/8234

Abstract: A method of forming a semiconductor device includes forming a first layer over a semiconductor fin and forming a second layer over the first layer. The first layer is a first material and the second layer is a second material different from the first layer. The second layer is thicker on a top of the semiconductor fin than along a sidewall of the semiconductor fin. The method further includes performing an oxidation process, the oxidation process oxidizing at least a portion of the second layer, and patterning the second layer and the first layer.

公开(公告)号：US20220384611A1

公开(公告)日：2022-12-01

申请号：US17393584

申请日：2021-08-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-I Lin ,  Ming-Ho Lin ,  Chun-Heng Chen ,  Yung-Cheng Lu

IPC: H01L29/66 ,  H01L21/8234 ,  H01L29/78

Abstract: A method of forming a semiconductor device includes forming a first layer on a semiconductor fin; forming a mask on the first layer, the mask being thicker on a top of the semiconductor fin than along a sidewall of the semiconductor fin. The first layer is thinned along the sidewall of the semiconductor fin using the mask. A second layer is formed on the semiconductor fin, the second layer covering the mask and the first layer. A dummy gate layer is formed on the semiconductor fin and patterned to expose a top surface of the semiconductor fin.

公开(公告)号：US20220359720A1

公开(公告)日：2022-11-10

申请号：US17813793

申请日：2022-07-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Ho Lin ,  Cheng-I Lin ,  Chun-Heng Chen ,  Chi On Chui

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/78 ,  H01L29/06

Abstract: A method includes forming a protruding structure, and forming a non-conformal film on the protruding structure using an Atomic Layer Deposition (ALD) process. The non-conformal film includes a top portion directly over the protruding structure, and a sidewall portion on a sidewall of the protruding structure. The top portion has a first thickness, and the sidewall portion has a second thickness smaller than the first thickness.

公开(公告)号：US11437491B2

公开(公告)日：2022-09-06

申请号：US16880464

申请日：2020-05-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Ho Lin ,  Cheng-I Lin ,  Chun-Heng Chen ,  Chi On Chui

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/78 ,  H01L29/06 ,  H01L21/3213

Abstract: A method includes forming a protruding structure, and forming a non-conformal film on the protruding structure using an Atomic Layer Deposition (ALD) process. The non-conformal film includes a top portion directly over the protruding structure, and a sidewall portion on a sidewall of the protruding structure. The top portion has a first thickness, and the sidewall portion has a second thickness smaller than the first thickness.

公开(公告)号：US11296084B2

公开(公告)日：2022-04-05

申请号：US16805858

申请日：2020-03-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-I Lin ,  Chun-Heng Chen ,  Ming-Ho Lin ,  Chi-On Chui

IPC: H01L27/092 ,  H01L21/02 ,  H01L21/8238

Abstract: Provided are a deposition method, a semiconductor device and a method of fabricating the same. The semiconductor device includes a substrate and a dielectric structure. The substrate includes at least one fin thereon. The dielectric structure covers the at least one fin. A thickness of the dielectric structure located on a top surface of the at least one fin is greater than a thickness of the dielectric structure located on a sidewall of the at least one fin. The dielectric structure includes a first dielectric layer and a second dielectric layer. The first dielectric layer is conformally disposed on the at least one fin. The second dielectric layer is disposed on the first dielectric layer over the top surface of the at least one fin. A thickness of the second dielectric layer is greater than a thickness of the first dielectric layer.