公开(公告)号：US20190341473A1

公开(公告)日：2019-11-07

申请号：US16511719

申请日：2019-07-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Feng YUAN ,  Hung-Ming CHEN ,  Tsung-Lin LEE ,  Chang-Yun CHANG ,  Clement Hsingjen WANN

IPC: H01L29/66 ,  H01L29/78 ,  H01L21/308

Abstract: The fin structure includes a first portion and a second, lower portion separated at a transition. The first portion has sidewalls that are substantially perpendicular to the major surface of the substrate. The lower portion has tapered sidewalls on opposite sides of the upper portion and a base having a second width larger than the first width.

公开(公告)号：US20150137266A1

公开(公告)日：2015-05-21

申请号：US14597590

申请日：2015-01-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yu-Lien HUANG ,  Ming-Huan TSAI ,  Clement Hsingjen WANN

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/167 ,  H01L29/161

CPC classification number: H01L29/7851 ,  H01L21/823412 ,  H01L21/823431 ,  H01L29/105 ,  H01L29/1054 ,  H01L29/161 ,  H01L29/167 ,  H01L29/66477 ,  H01L29/66545 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/66651

Abstract: A replacement channel and a method for forming the same in a semiconductor device are provided. A channel area is defined in a substrate which is a surface of a semiconductor wafer or a structure such as a fin formed over the wafer. Portions of the channel region are removed and are replaced with a replacement channel material formed by an epitaxial growth/deposition process to include a first dopant concentration level less than a first dopant concentration level. A subsequent doping operation or operations is then used to boost the average dopant concentration to a level greater than the first dopant concentration level. The replacement channel material is formed to include a gradient in which the upper portion of the replacement channel material has a greater dopant concentration than the lower portion of replacement channel material.

Abstract translation: 提供了一种替代通道​​及其在半导体器件中的形成方法。 沟道区域被限定在衬底中，该衬底是半导体晶片的表面或在晶片上形成的诸如鳍片的结构。 沟道区域的部分被去除，并被用外延生长/沉积工艺形成的替代沟道材料代替以包括小于第一掺杂剂浓度水平的第一掺杂剂浓度水平。 然后使用随后的掺杂操作或操作来将平均掺杂剂浓度升高到大于第一掺杂剂浓度水平的水平。 替换通道材料形成为包括其中更换通道材料的上部具有比替换通道材料的下部更大的掺杂剂浓度的梯度。