公开(公告)号：US11164746B2

公开(公告)日：2021-11-02

申请号：US16019420

申请日：2018-06-26

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chun-Hung Chen ,  Chih-Hung Hsieh ,  Jhon Jhy Liaw

IPC: H01L27/092 ,  H01L21/265 ,  H01L27/088 ,  H01L21/266 ,  H01L27/11

Abstract: In a method of manufacturing a semiconductor device, a first-conductivity type implantation region is formed in a semiconductor substrate, and a carbon implantation region is formed at a side boundary region of the first-conductivity type implantation region.

公开(公告)号：US20200219773A1

公开(公告)日：2020-07-09

申请号：US16824655

申请日：2020-03-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Hung Chen ,  Chih-Hung Hsieh ,  Jhon-Jhy Liaw

IPC: H01L21/8234 ,  H01L27/088 ,  H01L29/78 ,  H01L29/165 ,  H01L29/66 ,  H01L27/11 ,  H01L21/762 ,  H01L29/10 ,  H01L29/36 ,  H01L29/06

Abstract: A fin-type field-effect transistor device includes a substrate, insulators, gate stacks and dielectric strips. The substrate includes a first doped region, a second doped region, third doped blocks located above the first doped region and fourth doped blocks located above the second doped region, and fins located above the third doped blocks and the fourth doped blocks, wherein doping concentrations of the third doped blocks are lower than a doping concentration of the first doped region, and doping concentrations of the fourth doped blocks are lower than a doping concentration of the second doped region. The insulators are disposed on the third doped blocks and the fourth doped blocks of the substrate and covering the fins. The dielectric strips are disposed in between the fins, and in between the third doped blocks and the fourth doped blocks. The gate stacks are disposed over the fins and above the insulators.