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公开(公告)号：US12019378B2
公开(公告)日：2024-06-25
申请号：US17751570
申请日：2022-05-23
Inventor： Cho-Ying Lin , Tai-Yu Chen , Chieh Hsieh , Sheng-Kang Yu , Shang-Chieh Chien , Li-Jui Chen , Heng-Hsin Liu
IPC: G03F7/00
CPC classification number: G03F7/70916 , G03F7/70925
Abstract: A method includes: removing debris on a collector of a lithography equipment by changing physical structure of the debris with a cleaner, the cleaner being at a temperature less than about 13 degrees Celsius; forming a cleaned collector by exhausting the removable debris from the collector; and forming openings in a mask layer on a substrate by removing regions of the mask layer exposed to radiation from the cleaned collector.
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公开(公告)号：US11906902B2
公开(公告)日：2024-02-20
申请号：US17655708
申请日：2022-03-21
Inventor： Tai-Yu Chen , Shang-Chieh Chien , Sheng-Kang Yu , Li-Jui Chen , Heng-Hsin Liu
CPC classification number: G03F7/70033 , H05G2/008
Abstract: Example implementations described herein include a laser source and associated methods of operation that can balance or reduce uneven beam profile problem and even improve plasma heating efficiency to enhance conversion efficiency and intensity for extreme ultraviolet radiation generation. The laser source described herein generates an auxiliary laser beam to augment a pre-pulse laser beam and/or a main-pulse laser beam, such that uneven beam profiles may be corrected and/or compensated. This may improve an intensity of the laser source and also improve an energy distribution from the laser source to a droplet of a target material, effective to increase an overall operating efficiency of the laser source.
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公开(公告)号：US20230215594A1
公开(公告)日：2023-07-06
申请号：US18120905
申请日：2023-03-13
Inventor： Cheng Hung TSAI , Sheng-Kang Yu , Shang-Chieh Chien , Heng-Hsin Liu , Li-Jul Chen
IPC: G03F7/20
CPC classification number: G03F7/702 , G03F7/70033 , G03F7/70916
Abstract: An extreme ultra violet (EUV) light source apparatus includes a metal droplet generator, a collector mirror, an excitation laser inlet port for receiving an excitation laser, a first mirror configured to reflect the excitation laser that passes through a zone of excitation, and a second mirror configured to reflect the excitation laser reflected by the first mirror.
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公开(公告)号：US20230142835A1
公开(公告)日：2023-05-11
申请号：US18095114
申请日：2023-01-10
Inventor： Chiao-Hua Cheng , Sheng-Kang Yu , Heng-Hsin Liu , Li-Jui Chen , Shang-Chieh Chien
IPC: G03F7/20 , G06T7/00 , H04N23/695
CPC classification number: G03F7/70591 , G03F7/70033 , G06T7/001 , H04N23/695 , G06T2207/20224 , H04N23/555
Abstract: A method for inspecting an extreme ultraviolet (EUV) light source includes: removing a collector mirror of the EUV light source from a collector chamber; installing an inspection apparatus within the collector chamber, the apparatus including a selectively extendable and retractable member and a camera at one end of the member; operating a first actuator to extend the member along a path through the interior chamber of the EUV light source, thereby moving the camera to a given position within the interior chamber of the EUV light source; operating a second actuator to pan the camera about an axis of rotation, thereby establishing a given camera orientation within the interior of the EUV light source; and, capturing an image of the interior chamber of the EUV light source with the camera while the camera is at the given position and orientation established by the operation of the first and second actuators.
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公开(公告)号：US11605477B1
公开(公告)日：2023-03-14
申请号：US17460142
申请日：2021-08-27
Inventor： Cheng Hung Tsai , Sheng-Kang Yu , Shang-Chieh Chien , Heng-Hsin Liu , Li-Jui Chen
Abstract: An extreme ultra violet (EUV) light source apparatus includes a metal droplet generator, a collector mirror, an excitation laser inlet port for receiving an excitation laser, a first mirror configured to reflect the excitation laser that passes through a zone of excitation, and a second mirror configured to reflect the excitation laser reflected by the first mirror.
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Patent Agency Ranking
公开(公告)号：US12189298B2
公开(公告)日：2025-01-07
申请号：US18223496
申请日：2023-07-18
Inventor： Che-Chang Hsu , Sheng-Kang Yu , Shang-Chieh Chien , Li-Jui Chen , Heng-Hsin Liu
Abstract: In a method of generating extreme ultraviolet (EUV) radiation in a semiconductor manufacturing system one or more streams of a gas is directed, through one or more gas outlets mounted over a rim of a collector mirror of an EUV radiation source, to generate a flow of the gas over a surface of the collector mirror. The one or more flow rates of the one or more streams of the gas are adjusted to reduce an amount of metal debris deposited on the surface of the collector mirror.
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公开(公告)号：US12119129B2
公开(公告)日：2024-10-15
申请号：US18120905
申请日：2023-03-13
Inventor： Cheng Hung Tsai , Sheng-Kang Yu , Shang-Chieh Chien , Heng-Hsin Liu , Li-Jui Chen
CPC classification number: G21K1/06 , G02B5/0891 , G03F7/70033 , G03F7/702 , G03F7/7055 , G03F7/70916 , H05G2/005 , H05G2/008
Abstract: An extreme ultra violet (EUV) light source apparatus includes a metal droplet generator, a collector mirror, an excitation laser inlet port for receiving an excitation laser, a first mirror configured to reflect the excitation laser that passes through a zone of excitation, and a second mirror configured to reflect the excitation laser reflected by the first mirror.
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公开(公告)号：US11948702B2
公开(公告)日：2024-04-02
申请号：US18312991
申请日：2023-05-05
Inventor： Wei-Chung Tu , Sheng-Kang Yu , Shang-Chieh Chien , Li-Jui Chen , Heng-Hsin Liu
CPC classification number: G21K1/06 , G02B5/0808 , G02B5/0891 , G02B5/10 , G03F7/70025 , G03F7/70033 , H05G2/008
Abstract: A radiation source apparatus includes a vessel, a laser source, a collector, a horizontal obscuration bar, and a reflective mirror. The vessel has an exit aperture. The laser source is configured to emit a laser beam to excite a target material to form a plasma. The collector is disposed in the vessel and configured to collect a radiation emitted by the plasma and to reflect the collected radiation to the exit aperture of the vessel. The horizontal obscuration bar extends from a sidewall of the vessel at least to a position between the laser source and the exit aperture of the vessel. The reflective mirror is in the vessel and connected to the horizontal obscuration bar.
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公开(公告)号：US11852978B2
公开(公告)日：2023-12-26
申请号：US17805695
申请日：2022-06-07
Inventor： Tai-Yu Chen , Tzu-Jung Pan , Kuan-Hung Chen , Sheng-Kang Yu , Shang-Chieh Chien , Li-Jui Chen , Heng-Hsin Liu
CPC classification number: G03F7/70091
Abstract: The present disclosure provides a method for an extreme ultraviolet (EUV) lithography system that includes a radiation source having a laser device configured with a mechanism to generate an EUV radiation. The method includes collecting a laser beam profile of a laser beam from the laser device in a 3-dimensional (3D) mode; collecting an EUV energy distribution of the EUV radiation generated by the laser beam in the 3D mode; performing an analysis to the laser beam profile and the EUV energy distribution, resulting in an analysis data; and adjusting the radiation source according to the analysis data to enhance the EUV radiation.
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公开(公告)号：US11841625B2
公开(公告)日：2023-12-12
申请号：US17548016
申请日：2021-12-10
Inventor： Chun-Han Lin , Chieh Hsieh , Sheng-Kang Yu , Shang-Chieh Chien , Heng-Hsin Liu , Li-Jui Chen
CPC classification number: G03F7/70916 , G03F7/70033 , H05G2/008
Abstract: A method includes irradiating debris deposited in an extreme ultraviolet (EUV) lithography system with laser, controlling one or more of a wavelength of the laser or power of the laser to selectively vaporize the debris and limit damage to the EUV) lithography system, and removing the vaporized debris.
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