公开(公告)号：US12216413B2

公开(公告)日：2025-02-04

申请号：US18231170

申请日：2023-08-07

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Chun-Han Lin ,  Chieh Hsieh ,  Sheng-Kang Yu ,  Shang-Chieh Chien ,  Heng-Hsin Liu ,  Li-Jui Chen

IPC: G03F7/00 ,  H05G2/00

Abstract: A method includes irradiating debris deposited in an extreme ultraviolet (EUV) lithography system with laser, controlling one or more of a wavelength of the laser or power of the laser to selectively vaporize the debris and limit damage to the EUV) lithography system, and removing the vaporized debris.

公开(公告)号：US11841625B2

公开(公告)日：2023-12-12

申请号：US17548016

申请日：2021-12-10

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Chun-Han Lin ,  Chieh Hsieh ,  Sheng-Kang Yu ,  Shang-Chieh Chien ,  Heng-Hsin Liu ,  Li-Jui Chen

IPC: G03F7/20 ,  H05G2/00 ,  G03F7/00

CPC classification number: G03F7/70916 ,  G03F7/70033 ,  H05G2/008

Abstract: A method includes irradiating debris deposited in an extreme ultraviolet (EUV) lithography system with laser, controlling one or more of a wavelength of the laser or power of the laser to selectively vaporize the debris and limit damage to the EUV) lithography system, and removing the vaporized debris.