公开(公告)号：US20160155808A1

公开(公告)日：2016-06-02

申请号：US15017235

申请日：2016-02-05

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Tsubasa HONKE ,  Kyoko OKITA ,  Tomohiro KAWASE ,  Tsutomu HORI

IPC: H01L29/16 ,  H01L29/04 ,  C30B29/36 ,  C30B23/02 ,  C30B23/06

CPC classification number: H01L29/1608 ,  C30B23/00 ,  C30B23/002 ,  C30B23/025 ,  C30B23/066 ,  C30B29/36 ,  H01L29/045 ,  Y10T428/21

Abstract: Quality of a silicon carbide single crystal is improved. A crucible having first and second sides is prepared. A solid source material for growing silicon carbide with a sublimation method is arranged on the first side. A seed crystal made of silicon carbide is arranged on the second side. The crucible is arranged in a heat insulating container. The heat insulating container has an opening facing the second side. The crucible is heated such that the solid source material sublimes. A temperature on the second side is measured through the opening in the heat insulating container. The opening has a tapered inner surface narrowed toward the outside of the heat insulating container.

公开(公告)号：US20140030892A1

公开(公告)日：2014-01-30

申请号：US13915107

申请日：2013-06-11

Applicant: Sumitomo Electric Industries, Ltd.

Inventor： Tsubasa HONKE ,  Kyoko OKITA

IPC: H01L21/04

CPC classification number: H01L21/0445 ,  C30B23/00 ,  C30B29/36 ,  C30B33/12 ,  H01L21/02019 ,  H01L21/02024 ,  H01L21/3065 ,  H01L29/1608

Abstract: A method for manufacturing a silicon carbide substrate includes the steps of: preparing an ingot made of silicon carbide; obtaining a silicon carbide substrate by cutting the ingot prepared; etching a silicon surface of the silicon carbide substrate; and polishing the etching surface of the silicon carbide substrate after etching the silicon carbide substrate. The step of etching a silicon surface of the silicon carbide substrate includes the step of removing silicon atoms, which form the silicon carbide, from an etching region using chlorine gas, the etching region including the etching main surface of the silicon carbide substrate.

Abstract translation: 一种制造碳化硅基板的方法包括以下步骤：制备由碳化硅制成的铸块; 通过切割制备的锭获得碳化硅衬底; 蚀刻碳化硅衬底的硅表面; 并在蚀刻碳化硅衬底之后研磨碳化硅衬底的蚀刻表面。 蚀刻碳化硅衬底的硅表面的步骤包括从蚀刻区域使用氯气去除形成碳化硅的硅原子的步骤，该蚀刻区域包括碳化硅衬底的蚀刻主表面。

公开(公告)号：US20240145229A1

公开(公告)日：2024-05-02

申请号：US18280207

申请日：2021-11-09

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Kyoko OKITA ,  Tsubasa HONKE ,  Shunsaku UETA

IPC: H01L21/02 ,  H01L29/34

CPC classification number: H01L21/02019 ,  H01L29/34 ,  H01L29/1608

Abstract: A silicon carbide substrate includes a first main surface, a second main surface, and an outer peripheral surface. When a defect, in the first main surface, observed using a mirror electron microscope while irradiating the first main surface with an ultraviolet ray is a first defect and a defect, in the first main surface, observed using molten potassium hydroxide is a second defect, a value obtained by dividing an area density of the first defect by an area density of the second defect is more than 0.9 and less than 1.2. The first defect consists of a first blind scratch, a first basal plane dislocation spaced apart from the first blind scratch, a second basal plane dislocation in contact with the first blind scratch, and a second blind scratch spaced apart from each of the first basal plane dislocation and the second basal plane dislocation.

公开(公告)号：US20240136403A1

公开(公告)日：2024-04-25

申请号：US18278421

申请日：2021-11-24

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Kyoko OKITA ,  Tsubasa HONKE ,  Shunsaku UETA

IPC: H01L29/16 ,  H01L21/306

CPC classification number: H01L29/1608 ,  H01L21/30625

Abstract: A silicon carbide substrate includes a first main surface, a second main surface, a threading screw dislocation, and a blind scratch. The second main surface is located opposite to the first main surface. The threading screw dislocation extends to each of the first main surface and the second main surface. The blind scratch is exposed at the first main surface and extends linearly as viewed in a direction perpendicular to the first main surface. A value obtained by dividing an area density of the blind scratch by an area density of threading screw dislocation is smaller than 0.13.

公开(公告)号：US20210054529A1

公开(公告)日：2021-02-25

申请号：US16074143

申请日：2017-01-30

Applicant: Sumitomo Electric Industries, Ltd.

Inventor： Kyoko OKITA ,  Takashi SAKURADA ,  Eiryo TAKASUKA ,  Shunsaku UETA ,  Sho SASAKI ,  Naoki KAJI ,  Hidehiko MISHIMA ,  Hirokazu EGUCHI

IPC: C30B29/36 ,  G01N23/207

Abstract: In a case where a detector is positioned in a [11-20] direction, and where a first measurement region including a center of a main surface is irradiated with an X ray in a direction within ±15° relative to a [−1-120] direction, a ratio of a maximum intensity of a first intensity profile is more than or equal to 1500. In a case where the detector is positioned in a direction parallel to a [−1100] direction, and where the first measurement region is irradiated with an X ray in a direction within ±6° relative to a [1-100] direction, a ratio of a maximum intensity of a second intensity profile is more than or equal to 1500. An absolute value of a difference between maximum value and minimum value of energy at which the first intensity profile indicates a maximum value is less than or equal to 0.06 keV.

公开(公告)号：US20170306526A1

公开(公告)日：2017-10-26

申请号：US15520435

申请日：2015-08-31

Applicant: Sumitomo Electric Industries, Ltd.

Inventor： Kyoko OKITA

IPC: C30B33/10 ,  H01L21/67 ,  H01L21/04 ,  B24B37/04 ,  H01L21/02 ,  C30B29/36 ,  H01L29/16 ,  H01L21/306

CPC classification number: C30B33/10 ,  B24B37/042 ,  C30B29/36 ,  H01L21/02008 ,  H01L21/02052 ,  H01L21/02057 ,  H01L21/0475 ,  H01L21/30625 ,  H01L21/67057 ,  H01L29/1608

Abstract: A method for manufacturing a silicon carbide substrate includes steps of preparing a silicon carbide substrate having a main surface, polishing the main surface of the silicon carbide substrate using a polishing agent containing a metal catalyst, and cleaning the silicon carbide substrate after the step of polishing. The step of cleaning includes a step of cleaning the silicon carbide substrate with aqua regia.

公开(公告)号：US20130264584A1

公开(公告)日：2013-10-10

申请号：US13782222

申请日：2013-03-01

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Kyoko OKITA ,  Keiji ISHIBASHI

IPC: H01L29/16 ,  B24B9/06

CPC classification number: H01L29/34 ,  B24B9/065 ,  B24D3/06 ,  H01L23/562 ,  H01L29/04 ,  H01L29/1608 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A silicon carbide single-crystal substrate includes a first surface, a second surface opposite to the first surface, and a peripheral edge portion sandwiched between the first surface and the second surface. A plurality of grinding traces are formed in a surface of the peripheral edge portion. A chamfer width as a distance from an outermost peripheral end portion of the peripheral edge portion to one of the plurality of grinding traces which is located on an innermost peripheral side of the peripheral edge portion in a direction parallel to the first surface is not less than 50 μm and not more than 400 μm. Thereby, a silicon carbide single-crystal substrate capable of suppressing occurrence of a crack, and a method for manufacturing the same can be provided.

Abstract translation: 碳化硅单晶衬底包括第一表面，与第一表面相对的第二表面和夹在第一表面和第二表面之间的周边边缘部分。 在周缘部的表面形成有多个研磨迹线。 与周缘部的最外周端部相对于位于周缘部的与第一面平行的方向的最内周侧的多个研磨轨迹之一的距离的倒角宽度不小于 50岁，不超过400个妈妈。 由此，可以提供能够抑制裂纹发生的碳化硅单晶基板及其制造方法。

公开(公告)号：US20230081506A1

公开(公告)日：2023-03-16

申请号：US17993200

申请日：2022-11-23

Applicant: Sumitomo Electric Industries, Ltd.

Inventor： Kyoko OKITA ,  Takashi SAKURADA ,  Eiryo TAKASUKA ,  Shunsaku UETA ,  Sho SASAKI ,  Naoki KAJI ,  Hidehiko MISHIMA ,  Hirokazu EGUCHI

IPC: C30B29/36 ,  G01N23/207

Abstract: In a case where a detector is positioned in a [11-20] direction, and where a first measurement region including a center of a main surface is irradiated with an X ray in a direction within ±15° relative to a [−1-120] direction, a ratio of a maximum intensity of a first intensity profile is more than or equal to 1500. In a case where the detector is positioned in a direction parallel to a [−1100] direction, and where the first measurement region is irradiated with an X ray in a direction within ±6° relative to a [1-100] direction, a ratio of a maximum intensity of a second intensity profile is more than or equal to 1500. An absolute value of a difference between maximum value and minimum value of energy at which the first intensity profile indicates a maximum value is less than or equal to 0.06 keV.

公开(公告)号：US20220403550A1

公开(公告)日：2022-12-22

申请号：US17780355

申请日：2020-11-12

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Kyoko OKITA ,  Tsubasa HONKE ,  Shunsaku UETA

IPC: C30B25/18 ,  H01L21/02 ,  C30B29/36 ,  C30B33/10

Abstract: A ratio obtained by dividing a number of pits by a number of screw dislocations is equal to or smaller than 1%. The first main surface has a surface roughness equal to or smaller than 0.15 nm. An absolute value of a difference between the first wave number and the second wave number is equal to or smaller than 0.2 cm−1, and an absolute value of a difference between the first full width at half maximum and the second full width at half maximum is equal to or smaller than 0.25 cm−1.

公开(公告)号：US20220220637A1

公开(公告)日：2022-07-14

申请号：US17611138

申请日：2020-03-19

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Tsubasa HONKE ,  Kyoko OKITA

IPC: C30B29/36 ,  H01L21/02 ,  H01L29/16 ,  H01L29/36 ,  C30B33/00

Abstract: A silicon carbide substrate has a first main surface, a second main surface, and a chamfered portion. The second main surface is opposite to the first main surface. The chamfered portion is contiguous to each of the first main surface and the second main surface. The silicon carbide substrate has a maximum diameter of 150 mm or more. A surface manganese concentration in the chamfered portion is 1×1011 atoms/cm2 or less.