公开(公告)号：US20240063028A1

公开(公告)日：2024-02-22

申请号：US18022625

申请日：2021-08-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Shunichi ITO ,  Yoshihiro KAMATSU ,  Shinobu KAWAGUCHI ,  Shinya SASAGAWA

IPC: H01L21/477 ,  H01L21/02

CPC classification number: H01L21/477 ,  H01L21/02345 ,  H01L21/02266 ,  H01L21/0228 ,  H01L21/02554 ,  H01L21/02181 ,  H01L21/02565 ,  H01L21/02631

Abstract: A semiconductor device in which variation in characteristics is small is provided. A first insulator is formed; a first insulator is formed; a conductor is formed over the first insulator; a second insulator is formed over the conductor; a third insulator is formed over the second insulator; an oxide is formed over the third insulator; first heat treatment is performed; and second heat treatment following the first heat treatment is performed. The temperature of the first heat treatment is lower than the temperature of the second heat treatment.

公开(公告)号：US20190051673A1

公开(公告)日：2019-02-14

申请号：US16161573

申请日：2018-10-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunichi ITO ,  Toshinari SASAKI ,  Miyuki HOSOBA ,  Junichiro SAKATA

IPC: H01L27/12 ,  H01L29/786 ,  G09G3/20 ,  H01L29/45 ,  H01L29/24 ,  H01L29/66

Abstract: An object is to control composition and a defect of an oxide semiconductor, another object is to increase a field effect mobility of a thin film transistor and to obtain a sufficient on-off ratio with a reduced off current. A solution is to employ an oxide semiconductor whose composition is represented by InMO3(ZnO)m, where M is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co, and Al, and in is preferably a non-integer number of greater than or equal to 1 and less than 50. The concentration of Zn is lower than the concentrations of In and M. The oxide semiconductor has an amorphous structure. Oxide and nitride layers can be provided to prevent pollution and degradation of the oxide semiconductor.

公开(公告)号：US20150048364A1

公开(公告)日：2015-02-19

申请号：US14496404

申请日：2014-09-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunichi ITO ,  Toshinari SASAKI ,  Miyuki HOSOBA ,  Junichiro SAKATA

IPC: H01L27/12

CPC classification number: H01L27/1225 ,  G09G3/20 ,  H01L27/1248 ,  H01L27/1259 ,  H01L29/247 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: An object is to control composition and a defect of an oxide semiconductor, another object is to increase a field effect mobility of a thin film transistor and to obtain a sufficient on-off ratio with a reduced off current. A solution is to employ an oxide semiconductor whose composition is represented by InMO3(ZnO)m, where M is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co, and Al, and m is preferably a non-integer number of greater than 0 and less than 1. The concentration of Zn is lower than the concentrations of In and M. The oxide semiconductor has an amorphous structure. Oxide and nitride layers can be provided to prevent pollution and degradation of the oxide semiconductor.

公开(公告)号：US20150380566A1

公开(公告)日：2015-12-31

申请号：US14822995

申请日：2015-08-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunichi ITO ,  Toshinari SASAKI ,  Miyuki HOSOBA ,  Junichiro SAKATA

IPC: H01L29/786 ,  G09G3/20

CPC classification number: H01L27/1225 ,  G09G3/20 ,  H01L27/1248 ,  H01L27/1259 ,  H01L29/247 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: An object is to control composition and a defect of an oxide semiconductor, another object is to increase a field effect mobility of a thin film transistor and to obtain a sufficient on-off ratio with a reduced off current. A solution is to employ an oxide semiconductor whose composition is represented by InMO3(ZnO)m, where M is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co, and Al, and m is preferably a non-integer number of greater than 0 and less than 1. The concentration of Zn is lower than the concentrations of In and M. The oxide semiconductor has an amorphous structure. Oxide and nitride layers can be provided to prevent pollution and degradation of the oxide semiconductor.

Abstract translation: 目的是控制氧化物半导体的组成和缺陷，另一个目的是增加薄膜晶体管的场效应迁移率，并获得具有减小的截止电流的足够的开 - 关比。 解决方案是使用其组成由InMO 3（ZnO）m表示的氧化物半导体，其中M是选自Ga，Fe，Ni，Mn，Co和Al中的一种或多种元素，m优选为非 - 整数大于0且小于1. Zn的浓度低于In和M的浓度。氧化物半导体具有无定形结构。 可以提供氧化物和氮化物层以防止氧化物半导体的污染和劣化。

公开(公告)号：US20150008321A1

公开(公告)日：2015-01-08

申请号：US14305173

申请日：2014-06-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Daisuke OHGARANE ,  Koji DAIRIKI ,  Masahiro TAKAHASHI ,  Shunichi ITO ,  Erika TAKAHASHI

IPC: G01N23/205 ,  H01J37/06 ,  G01N23/20

CPC classification number: G01N23/2055 ,  G01N23/20058 ,  G01N2223/61 ,  H01J37/06 ,  H01J2237/2065 ,  H01J2237/2805

Abstract: Provided is a transmission electron diffraction measurement apparatus including an electron gun; a first optical system under the electron gun; a sample chamber under the first optical system; a second optical system under the sample chamber; an observation chamber under the second optical system; a region that emits light by receiving energy from an electron in the observation chamber; and a camera facing the region.

Abstract translation: 提供一种包括电子枪的透射电子衍射测量装置; 电子枪下的第一光学系统; 第一光学系统下的样品室; 样品室下方的第二光学系统; 第二光学系统下的观察室; 通过从观察室中的电子接收能量而发光的区域; 以及面向该地区的相机。