公开(公告)号：US12287064B2

公开(公告)日：2025-04-29

申请号：US17037934

申请日：2020-09-30

Applicant: SK Specialty Co., Ltd. ,  SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sunhye Hwang ,  Wonwoong Chung ,  Younjoung Cho ,  Youngha Song ,  Yonghun Shin ,  Byungkil Lee ,  Sungdo Lee ,  Jinhee Lee

IPC: C23C14/24 ,  C23C16/455 ,  F17C1/00 ,  F17C1/14

Abstract: A deposition system and a gas storage device, the deposition system including a process chamber; and a gas supply outside of the process chamber, the gas supply being configured to provide monochlorosilane, wherein the gas supply includes a cabinet; and a gas container inside the cabinet, and the gas container includes aluminum (Al).

公开(公告)号：US20240429039A1

公开(公告)日：2024-12-26

申请号：US18597101

申请日：2024-03-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun Hyea Ko ,  Soyoung Lee ,  Hoon Han ,  Byungkeun Hwang ,  Jaewoon Kim ,  Younghun Sung ,  Younjoung Cho

IPC: H01L21/02 ,  C09D5/00 ,  C09D5/26 ,  C09D175/02 ,  C23C16/56 ,  H01L21/285 ,  H01L21/3105

Abstract: Methods of depositing a film are provided. The methods may include providing a substrate that includes a first surface and a second surface adjacent to the first surface; forming a polymer sacrificial layer on the first surface by using a molecular layer deposition (MLD) process; forming a first film on the second surface; and removing the polymer sacrificial layer formed on the first surface. A functional group density of the first surface may be higher than a functional group density of the second surface, and the polymer sacrificial layer may include a thermally decomposable polymer.

公开(公告)号：US11524973B2

公开(公告)日：2022-12-13

申请号：US16857292

申请日：2020-04-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung-Min Ryu ,  Akio Saito ,  Takanori Koide ,  Atsushi Yamashita ,  Kazuki Harano ,  Gyu-Hee Park ,  Soyoung Lee ,  Jaesoon Lim ,  Younjoung Cho

IPC: C07F9/00 ,  H01L21/285 ,  H01L51/00 ,  H01L49/02

Abstract: Described herein are metal compounds and methods of fabricating semiconductor devices using the same. The metal compounds include a material of Chemical Formula 1.

公开(公告)号：US10883173B2

公开(公告)日：2021-01-05

申请号：US16200149

申请日：2018-11-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yeonock Han ,  Wonwoong Chung ,  Keum Seok Park ,  Pankwi Park ,  Jeongho Yoo ,  Younjoung Cho ,  Byung Koo Kong ,  Mijeong Kim ,  Jin Wook Lee ,  Changeun Jang

IPC: F17C1/00 ,  F17C13/02 ,  C23C16/448 ,  H01L21/02

Abstract: A method of manufacturing a semiconductor device includes disposing a gas-storage cylinder storing monochlorosilane within a gas supply unit. The monochlorosilane is supplied from the gas-storage cylinder into a process chamber to form a silicon containing layer therein. The gas-storage cylinder includes manganese.

公开(公告)号：US11746121B2

公开(公告)日：2023-09-05

申请号：US17072096

申请日：2020-10-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyuhee Park ,  Younjoung Cho ,  Haruyoshi Sato ,  Kazuki Harano ,  Hiroyuki Uchiuzou

IPC: C23C16/40 ,  C07F11/00 ,  C01G39/02 ,  C23C16/34 ,  C01B21/06

CPC classification number: C07F11/00 ,  C01B21/062 ,  C01G39/02 ,  C23C16/34 ,  C23C16/405

Abstract: A molybdenum compound and a method of manufacturing an integrated circuit device, the molybdenum compound being represented by the following General Formula (I):

公开(公告)号：US11728160B2

公开(公告)日：2023-08-15

申请号：US17376403

申请日：2021-07-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Younsoo Kim ,  Haeryong Kim ,  Seungmin Ryu ,  Sunmin Moon ,  Jeonggyu Song ,  Changsu Woo ,  Kyooho Jung ,  Younjoung Cho

IPC: H01L21/02

CPC classification number: H01L21/02164 ,  H01L21/0228

Abstract: A method of forming an oxide film including two non-oxygen elements includes providing a first source material on a substrate, the first source material including a first central element, providing an electron donor compound to be bonded to the first source material, providing a second source material on the substrate after the providing of the electron donor compound, the second source material including a second central element, and providing an oxidant on the substrate.

公开(公告)号：US20230215723A1

公开(公告)日：2023-07-06

申请号：US18147733

申请日：2022-12-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： EUNHYEA KO ,  Hoon Han ,  Soyoung Lee ,  Thanh Cuong Nguyen ,  Hiroyuki Uchiuzou ,  Kiyoshi Murata ,  Tomoharu Yoshino ,  Daekeon Kim ,  Younjoung Cho ,  Jiyu Choi ,  Byungkeun Hwang

IPC: H01L21/02 ,  C23C16/455 ,  C23C2/02 ,  H01L21/311

CPC classification number: H01L21/0217 ,  H01L21/02323 ,  H01L21/0226 ,  C23C16/45525 ,  C23C2/026 ,  H01L21/31116

Abstract: To manufacture an integrated circuit (IC) device, a structure in which a first material film including silicon atoms and nitrogen atoms and a second material film devoid of nitrogen atoms is formed on a substrate. A carbonyl compound having a functional group without an α-hydrogen is applied to the structure, and thus, an inhibitor is selectively formed only on an exposed surface of the first material film from among the first material film and the second material film.

公开(公告)号：US11081389B2

公开(公告)日：2021-08-03

申请号：US16711845

申请日：2019-12-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung-min Ryu ,  Younsoo Kim ,  Gyu-hee Park ,  Jaesoon Lim ,  Younjoung Cho

IPC: H01L21/768 ,  H01L21/285 ,  H01L27/108 ,  H01L21/8238

Abstract: A method of manufacturing a semiconductor device, the method including providing a metal precursor on a substrate to form a preliminary layer that includes a first metal; providing a reducing agent on the preliminary layer, the reducing agent including a compound that includes a second metal; and providing a reactant on the preliminary layer to form a metal-containing layer, wherein the second metal has multiple oxidation states, the second metal in the reducing agent having a lower oxidation state among the multiple oxidation states prior to providing the reducing agent on the preliminary layer.

公开(公告)号：US20200339618A1

公开(公告)日：2020-10-29

申请号：US16702791

申请日：2019-12-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soyoung Lee ,  Hiroshi Nihei ,  Takamasa Miyazaki ,  Yousuke Satou ,  Kouhei Sugimoto ,  Masashi Shirai ,  Jaesoon Lim ,  Younsoo Kim ,  Younjoung Cho

IPC: C07F15/06 ,  C23C16/455 ,  C23C16/18 ,  H01L21/3213 ,  H01L21/02

Abstract: The inventive concept relates to a cobalt precursor, a method for manufacturing a cobalt-containing layer using the same, and a method for manufacturing a semiconductor device using the same. More particularly, the cobalt precursor of the inventive concept includes at least one compound selected from the group consisting of a compound of Formula 1 and a compound of Formula 2.

公开(公告)号：US20190309415A1

公开(公告)日：2019-10-10

申请号：US16200149

申请日：2018-11-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yeonock Han ,  Wonwoong Chung ,  Keum Seok Park ,  Pankwi Park ,  Jeongho Yoo ,  Younjoung Cho ,  Byung Koo Kong ,  Mijeong Kim ,  Jin Wook Lee ,  Changeun Jang

IPC: C23C16/448 ,  H01L21/02

Abstract: A method of manufacturing a semiconductor device includes disposing a gas-storage cylinder storing monochlorosilane within a gas supply unit. The monochlorosilane is supplied from the gas-storage cylinder into a process chamber to form a silicon containing layer therein. The gas-storage cylinder includes manganese.