公开(公告)号：US10528491B2

公开(公告)日：2020-01-07

申请号：US16443289

申请日：2019-06-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaegyu Lee ,  Jisoo Kim ,  Young-Jin Park ,  Bo-Ram Shin

IPC: G06F12/00 ,  G06F12/14 ,  G06F11/10 ,  G06F11/14

Abstract: In one embodiment, the method includes receiving, at a storage device, a request. The request includes a request message authentication code and write protect information. The write protect information includes at least one of start address information and length information. The start address information indicates a logical block address at which a memory area in a non-volatile memory of the storage device starts, and the length information indicates a length of the memory area. The method also includes generating, at the storage device, a message authentication code based on (1) at least one of the start address information and the length information, and (2) a key stored at the storage device; authenticating, at the storage device, the request based on the generated message authentication code and the request message authentication code; and processing, at the storage device, the request based on a result of the authenticating.

公开(公告)号：US09025366B2

公开(公告)日：2015-05-05

申请号：US14040595

申请日：2013-09-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Jin Park ,  Ilguy Jung

IPC: G11C11/00 ,  G11C11/16 ,  G06F13/00

CPC classification number: G11C11/1675 ,  G06F8/61 ,  G06F9/4406 ,  G06F13/00 ,  G11C11/1653 ,  G11C11/1659

Abstract: A main memory system is provided which includes a nonvolatile memory including a first memory area designated to store an operating system program and a second memory area designated to store user data; and a memory controller configured to control the nonvolatile memory such that the operating system program is loaded onto the second memory area from the first memory area. The nonvolatile memory may be one of a phase change RAM, a resistive RAM, and a magnetic RAM.

Abstract translation: 提供一种主存储器系统，其包括非易失性存储器，包括被指定为存储操作系统程序的第一存储区域和指定用于存储用户数据的第二存储区域; 以及存储器控制器，其被配置为控制所述非易失性存储器，使得所述操作系统程序从所述第一存储区域加载到所述第二存储器区域。 非易失性存储器可以是相变RAM，电阻RAM和磁性RAM中的一个。

公开(公告)号：US11615035B2

公开(公告)日：2023-03-28

申请号：US17736253

申请日：2022-05-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaegyu Lee ,  Jisoo Kim ,  Young-Jin Park ,  Bo-Ram Shin

IPC: G06F12/00 ,  G06F12/14 ,  G06F11/10 ,  G06F11/14 ,  G06F12/02

Abstract: In one embodiment, the method includes receiving, at a storage device, a request. The request includes a request message authentication code and write protect information. The write protect information includes at least one of start address information and length information. The start address information indicates a logical block address at which a memory area in a non-volatile memory of the storage device starts, and the length information indicates a length of the memory area. The method also includes generating, at the storage device, a message authentication code based on (1) at least one of the start address information and the length information, and (2) a key stored at the storage device; authenticating, at the storage device, the request based on the generated message authentication code and the request message authentication code; and processing, at the storage device, the request based on a result of the authenticating.

公开(公告)号：US11482871B2

公开(公告)日：2022-10-25

申请号：US16625901

申请日：2018-05-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Jin Park ,  Sung-Ha Park ,  Joon-Yung Park ,  Jung-Oh Sung ,  Dong-Rak Shin ,  Jae-Hyun Ahn ,  Sung-Eun Lee ,  Wooin Choi ,  Insun Choi ,  Jongik Won

IPC: H02J7/00 ,  G01R31/52 ,  G06F1/26

Abstract: Various embodiments of the present invention relate to an electronic device and a charging control method therefor. The electronic device may comprise: a connection terminal for performing wired communication with an external electronic device; and at least one processor functionally connected to the connection terminal, wherein the at least one processor detects connection of a charging device through the connection terminal, receives state information of at least one adjacent terminal located next to a power terminal of the connection terminal, and controls charging power to be supplied thereto through the charging device, on the basis of the received state information of the adjacent terminal. In addition, various other embodiments are possible.

公开(公告)号：US10783090B2

公开(公告)日：2020-09-22

申请号：US16803054

申请日：2020-02-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaegyu Lee ,  Jisoo Kim ,  Young-Jin Park ,  Bo-Ram Shin

IPC: G06F12/00 ,  G06F12/14 ,  G06F11/10 ,  G06F11/14

Abstract: In one embodiment, the method includes receiving, at a storage device, a request. The request includes a request message authentication code and write protect information. The write protect information includes at least one of start address information and length information. The start address information indicates a logical block address at which a memory area in a non-volatile memory of the storage device starts, and the length information indicates a length of the memory area. The method also includes generating, at the storage device, a message authentication code based on (1) at least one of the start address information and the length information, and (2) a key stored at the storage device; authenticating, at the storage device, the request based on the generated message authentication code and the request message authentication code; and processing, at the storage device, the request based on a result of the authenticating.

公开(公告)号：US10747687B2

公开(公告)日：2020-08-18

申请号：US16567355

申请日：2019-09-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaegyu Lee ,  Jisoo Kim ,  Young-Jin Park ,  Bo-Ram Shin

IPC: G06F12/00 ,  G06F12/14 ,  G06F11/10 ,  G06F11/14 ,  G06F12/02

Abstract: In one embodiment, the method includes receiving, at a storage device, a request. The request includes a request message authentication code and write protect information. The write protect information includes at least one of start address information and length information. The start address information indicates a logical block address at which a memory area in a non-volatile memory of the storage device starts, and the length information indicates a length of the memory area. The method also includes generating, at the storage device, a message authentication code based on (1) at least one of the start address information and the length information, and (2) a key stored at the storage device; authenticating, at the storage device, the request based on the generated message authentication code and the request message authentication code; and processing, at the storage device, the request based on a result of the authenticating.

公开(公告)号：US10318188B2

公开(公告)日：2019-06-11

申请号：US15345684

申请日：2016-11-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-Jin Park ,  Chan-Ik Park ,  Won-Seok Lee

IPC: G06F3/06 ,  G06F12/10

Abstract: A memory access control method that can prevent a cell hammer phenomenon includes setting at least a part of all the memory cells a safe memory region, and setting the remaining memory cells to a normal memory region. In the safe memory region, some cells set to an enabled state are accessible for data writing or reading, and the remaining cells set to a disabled state are inaccessible. Based on a safe address mapping algorithm, access to all memory cells in the safe memory region is controlled such that access to the enabled memory cells is allowed and access to the disabled memory cells is prevented. The enabled memory cells in the safe memory region are spaced apart from each other by at least one disabled memory cell in a horizontal and/or vertical direction.