公开(公告)号：US09040958B2

公开(公告)日：2015-05-26

申请号：US13792525

申请日：2013-03-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang-seung Lee ,  Yong-sung Kim ,  Joo-ho Lee ,  Yong-seok Jung

IPC: H01L29/06 ,  H01L29/16 ,  H01L29/66 ,  H01L29/78 ,  H01L29/49 ,  H01L29/786

CPC classification number: H01L29/1606 ,  H01L29/4908 ,  H01L29/66045 ,  H01L29/66742 ,  H01L29/78 ,  H01L29/78684 ,  H01L29/78696

Abstract: Transistors, and methods of manufacturing the transistors, include graphene and a material converted from graphene. The transistor may include a channel layer including graphene and a gate insulating layer including a material converted from graphene. The material converted from the graphene may be fluorinated graphene. The channel layer may include a patterned graphene region. The patterned graphene region may be defined by a region converted from graphene. A gate of the transistor may include graphene.

Abstract translation: 晶体管和制造晶体管的方法包括石墨烯和从石墨烯转化的材料。 晶体管可以包括包括石墨烯的沟道层和包括从石墨烯转换的材料的栅极绝缘层。 从石墨烯转化的材料可以是氟化石墨烯。 沟道层可以包括图案化的石墨烯区域。 图案化的石墨烯区域可以由从石墨烯转换的区域限定。 晶体管的栅极可以包括石墨烯。

公开(公告)号：US09030187B2

公开(公告)日：2015-05-12

申请号：US13856026

申请日：2013-04-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang-seung Lee ,  Yong-sung Kim ,  Jeo-young Shim ,  Joo-ho Lee

IPC: G01N27/00 ,  G01R27/08 ,  G01N33/487 ,  B82Y15/00 ,  G01N15/12 ,  G01N27/327

CPC classification number: B82Y15/00 ,  G01N15/1227 ,  G01N27/3271 ,  G01N33/48721 ,  Y10S977/734 ,  Y10S977/938

Abstract: A nanogap device includes a first insulation layer having a nanopore formed therein, a first nanogap electrode which may be formed on the first insulation layer and may be divided into two parts with a nanogap interposed between the two parts, the nanogap facing the nanopore, a second insulation layer formed on the first nanogap electrode, a first graphene layer formed on the second insulation layer, a first semiconductor layer formed on the first graphene layer, a first drain electrode formed on the first semiconductor layer, and a first source electrode formed on the first graphene layer such as to be apart from the first semiconductor layer.

Abstract translation: 纳米测距装置包括其中形成有纳米孔的第一绝缘层，可以形成在第一绝缘层上的第一纳米隙电极，并且可以被分成两部分，其间插入两个部分之间的纳米隙，面对纳米孔的纳米孔， 形成在第一绝缘层上的第二绝缘层，形成在第二绝缘层上的第一石墨烯层，形成在第一石墨烯层上的第一半导体层，形成在第一半导体层上的第一漏电极和形成在第一绝缘层上的第一源电极， 第一石墨烯层，以便与第一半导体层分开。