公开(公告)号：US10741562B2

公开(公告)日：2020-08-11

申请号：US16389576

申请日：2019-04-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ye Ram Kim ,  Won Chul Lee

IPC: H01L27/108 ,  H01L29/94 ,  H01L23/64 ,  H01L49/02 ,  H01L21/768

Abstract: A semiconductor device and method of manufacturing are provided. The semiconductor device includes a substrate; first and second structures spaced apart from each other on the substrate in a first direction, the first structure including a first lower electrode and the second structure including a second lower electrode; a first supporter pattern disposed on the substrate to support the first and second structures, and including a first region that exposes portions of sidewalls of the first and second structures, and a second region that covers a second portion of the sidewalls; and a second supporter pattern disposed on the first supporter pattern to support the first and second structures, the second supporter pattern including a third region, the third region configured to expose portions of the first sidewall and the second sidewall, and a fourth region that covers a portion of the first and second sidewalls.

公开(公告)号：US10411016B2

公开(公告)日：2019-09-10

申请号：US16043619

申请日：2018-07-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ye Ram Kim ,  Won Chul Lee

IPC: H01L27/108 ,  H01L49/02

Abstract: A semiconductor device includes a substrate, a plurality of lower electrodes disposed on the substrate and are repeatedly arranged in a first direction and in a second direction that crosses the first direction, and a first electrode support contacting a sidewall of at least one of the lower electrodes. The first electrode support includes a first support region including a first opening and a second support region disposed at a border of the first support region. An outer sidewall of the first electrode support includes a first sidewall extending in the first direction, a second sidewall extending in the second direction, and a connecting sidewall connecting the first and second sidewalls. The second support region includes the connecting sidewall. In a first portion of the second support region, a width of the first portion of the second support region decreases in a direction away from the first support region.

公开(公告)号：US10283509B2

公开(公告)日：2019-05-07

申请号：US15725517

申请日：2017-10-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji Ung Pak ,  Won Chul Lee

IPC: G11C5/02 ,  G11C7/12 ,  H01L27/108 ,  H01L27/11 ,  G11C11/416 ,  H01L21/285 ,  G11C11/56 ,  H01L49/02 ,  H01L27/112 ,  G11C11/403 ,  G11C11/412

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate which includes a cell region including first and second regions, and a peri region more adjacent to the second region than adjacent to the first region, first and second lower electrodes disposed in the first and second regions, respectively, first and second lower support patterns disposed on outer walls of the first and second lower electrodes, respectively, an upper support pattern disposed on outer walls of the first and second lower electrodes, and being on and spaced apart from the first and second lower support patterns, a dielectric layer disposed on surfaces of the first and second lower electrodes, the first and second lower support patterns, and the upper support pattern, and an upper electrode disposed on a surface of the dielectric layer, wherein thickness of the first lower support pattern is smaller than thickness of the second lower support pattern.

公开(公告)号：US10032778B2

公开(公告)日：2018-07-24

申请号：US15668847

申请日：2017-08-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ye Ram Kim ,  Won Chul Lee

IPC: H01L27/108 ,  H01L49/02

CPC classification number: H01L27/10852 ,  H01L27/10814 ,  H01L28/56 ,  H01L28/87 ,  H01L28/91

Abstract: A semiconductor device includes a substrate, a plurality of lower electrodes disposed on the substrate and are repeatedly arranged in a first direction and in a second direction that crosses the first direction, and a first electrode support contacting a sidewall of at least one of the lower electrodes. The first electrode support includes a first support region including a first opening and a second support region disposed at a border of the first support region. An outer sidewall of the first electrode support includes a first sidewall extending in the first direction, a second sidewall extending in the second direction, and a connecting sidewall connecting the first and second sidewalls. The second support region includes the connecting sidewall. In a first portion of the second support region, a width of the first portion of the second support region decreases in a direction away from the first support region.

公开(公告)号：US09798656B2

公开(公告)日：2017-10-24

申请号：US14309952

申请日：2014-06-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Won Chul Lee ,  Moo Sung Kim

IPC: G06F12/02 ,  G06F3/06

CPC classification number: G06F12/0246 ,  G06F3/0604 ,  G06F3/065 ,  G06F3/0679 ,  G06F2003/0697 ,  G06F2212/7205 ,  G06F2212/7211

Abstract: A method of operating a memory controller includes; counting a number of read operations directed to a page-group of data stored in a block and generating a first read count number, then comparing the first read count number with a first reference count threshold among a first set of reference count thresholds associated with the page-group, and upon determining that the first read count number exceeds the first reference count threshold, performing a copy-back operation of the page-group data from the block to another block.