公开(公告)号：US10607997B2

公开(公告)日：2020-03-31

申请号：US16543216

申请日：2019-08-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ye Ram Kim ,  Won Chul Lee

IPC: H01L27/108 ,  H01L49/02

Abstract: A semiconductor device includes a substrate, a plurality of lower electrodes disposed on the substrate and are repeatedly arranged in a first direction and in a second direction that crosses the first direction, and a first electrode support contacting a sidewall of at least one of the lower electrodes. The first electrode support includes a first support region including a first opening and a second support region disposed at a border of the first support region. An outer sidewall of the first electrode support includes a first sidewall extending in the first direction, a second sidewall extending in the second direction, and a connecting sidewall connecting the first and second sidewalls. The second support region includes the connecting sidewall. In a first portion of the second support region, a width of the first portion of the second support region decreases in a direction away from the first support region.

公开(公告)号：US10304838B2

公开(公告)日：2019-05-28

申请号：US15722053

申请日：2017-10-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ye Ram Kim ,  Won Chul Lee

IPC: H01L27/108 ,  H01L29/94 ,  H01L23/64 ,  H01L21/768 ,  H01L49/02

Abstract: A semiconductor device and method of manufacturing are provided. The semiconductor device includes a substrate; first and second structures spaced apart from each other on the substrate in a first direction, the first structure including a first lower electrode and the second structure including a second lower electrode; a first supporter pattern disposed on the substrate to support the first and second structures, and including a first region that exposes portions of sidewalls of the first and second structures, and a second region that covers a second portion of the sidewalls; and a second supporter pattern disposed on the first supporter pattern to support the first and second structures, the second supporter pattern including a third region, the third region configured to expose portions of the first sidewall and the second sidewall, and a fourth region that covers a portion of the first and second sidewalls.

公开(公告)号：US10741562B2

公开(公告)日：2020-08-11

申请号：US16389576

申请日：2019-04-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ye Ram Kim ,  Won Chul Lee

IPC: H01L27/108 ,  H01L29/94 ,  H01L23/64 ,  H01L49/02 ,  H01L21/768

Abstract: A semiconductor device and method of manufacturing are provided. The semiconductor device includes a substrate; first and second structures spaced apart from each other on the substrate in a first direction, the first structure including a first lower electrode and the second structure including a second lower electrode; a first supporter pattern disposed on the substrate to support the first and second structures, and including a first region that exposes portions of sidewalls of the first and second structures, and a second region that covers a second portion of the sidewalls; and a second supporter pattern disposed on the first supporter pattern to support the first and second structures, the second supporter pattern including a third region, the third region configured to expose portions of the first sidewall and the second sidewall, and a fourth region that covers a portion of the first and second sidewalls.

公开(公告)号：US10411016B2

公开(公告)日：2019-09-10

申请号：US16043619

申请日：2018-07-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ye Ram Kim ,  Won Chul Lee

IPC: H01L27/108 ,  H01L49/02

Abstract: A semiconductor device includes a substrate, a plurality of lower electrodes disposed on the substrate and are repeatedly arranged in a first direction and in a second direction that crosses the first direction, and a first electrode support contacting a sidewall of at least one of the lower electrodes. The first electrode support includes a first support region including a first opening and a second support region disposed at a border of the first support region. An outer sidewall of the first electrode support includes a first sidewall extending in the first direction, a second sidewall extending in the second direction, and a connecting sidewall connecting the first and second sidewalls. The second support region includes the connecting sidewall. In a first portion of the second support region, a width of the first portion of the second support region decreases in a direction away from the first support region.

公开(公告)号：US10032778B2

公开(公告)日：2018-07-24

申请号：US15668847

申请日：2017-08-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ye Ram Kim ,  Won Chul Lee

IPC: H01L27/108 ,  H01L49/02

CPC classification number: H01L27/10852 ,  H01L27/10814 ,  H01L28/56 ,  H01L28/87 ,  H01L28/91

Abstract: A semiconductor device includes a substrate, a plurality of lower electrodes disposed on the substrate and are repeatedly arranged in a first direction and in a second direction that crosses the first direction, and a first electrode support contacting a sidewall of at least one of the lower electrodes. The first electrode support includes a first support region including a first opening and a second support region disposed at a border of the first support region. An outer sidewall of the first electrode support includes a first sidewall extending in the first direction, a second sidewall extending in the second direction, and a connecting sidewall connecting the first and second sidewalls. The second support region includes the connecting sidewall. In a first portion of the second support region, a width of the first portion of the second support region decreases in a direction away from the first support region.