Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15722053Application Date: 2017-10-02
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Publication No.: US10304838B2Publication Date: 2019-05-28
- Inventor: Ye Ram Kim , Won Chul Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2017-0010941 20170124
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L29/94 ; H01L23/64 ; H01L21/768 ; H01L49/02

Abstract:
A semiconductor device and method of manufacturing are provided. The semiconductor device includes a substrate; first and second structures spaced apart from each other on the substrate in a first direction, the first structure including a first lower electrode and the second structure including a second lower electrode; a first supporter pattern disposed on the substrate to support the first and second structures, and including a first region that exposes portions of sidewalls of the first and second structures, and a second region that covers a second portion of the sidewalls; and a second supporter pattern disposed on the first supporter pattern to support the first and second structures, the second supporter pattern including a third region, the third region configured to expose portions of the first sidewall and the second sidewall, and a fourth region that covers a portion of the first and second sidewalls.
Public/Granted literature
- US20180211962A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-07-26
Information query
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