公开(公告)号：US20220352203A1

公开(公告)日：2022-11-03

申请号：US17859631

申请日：2022-07-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sunggil Kim ,  Sungjin Kim ,  Seulye Kim ,  Junghwan Kim ,  Chanhyoung Kim

IPC: H01L27/11582 ,  H01L29/10

Abstract: A three-dimensional semiconductor device including a conductive layer disposed on a substrate and including a first conductivity-type impurity; an insulating base layer disposed on the conductive layer; a stack structure including a lower insulating film disposed on the insulating base, layer, and a plurality of gate electrodes and a plurality of mold insulating layers alternately stacked on the lower insulating film, wherein the insulating base layer includes a high dielectric material; a vertical structure including a vertical channel layer penetrating through the stack structure arid a vertical insulating layer disposed between the vertical channel layer and the plurality of gate electrodes, the vertical structure having an extended area extending in a width direction in the insulating base layer; and an isolation structure penetrating through the stack structure, the insulating base layer and the conductive layer, and extending in a direction parallel to an upper surface of the substrate, wherein the conductive layer has an extension portion extending along a surface of the vertical channel layer in the extended area of the vertical structure.

公开(公告)号：US11190837B2

公开(公告)日：2021-11-30

申请号：US16431886

申请日：2019-06-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jiwoong Choi ,  Hyunsoo Choi ,  Minsoo Kim ,  Sungjin Kim ,  Younguk Kim ,  Ilkoo Kim ,  Hyunhan Kim

IPC: H04N21/44 ,  H04N21/439 ,  H04N21/234 ,  H04N21/442 ,  H04N5/14 ,  H04N21/434

Abstract: An electronic apparatus is provided. The electronic apparatus includes a memory configured to store computer executable instructions, an interface, a display, and a processor configured to, by executing the computer executable instructions control the display to display an image corresponding to a broadcasting content input through the interface, based on a mute interval being detected by analyzing an input signal, compare a signal before the mute interval with a signal after the mute interval and identify whether the signals before and after the mute interval are continuous, and identify an occurrence of a channel change event in which the broadcasting content is changed to another broadcasting content based on the identification.

公开(公告)号：US10742369B2

公开(公告)日：2020-08-11

申请号：US15807240

申请日：2017-11-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seong-Jun Song ,  Kyung-Hwan Jo ,  Eun-Ji Kim ,  Jae-Hyun Kwon ,  Sungjin Kim ,  Donginn Seo ,  Dohyeon Lee ,  Seung Chul Lee

IPC: H04L5/00 ,  H04B7/08 ,  H04B1/00 ,  H04B7/04 ,  H04W40/02 ,  H04B17/13

Abstract: An electronic device is provided. The electronic device includes a first antenna for a first band and a second band, a second antenna for the second band and a third band and a pre-processing unit configured to generate, based on identifying a frequency band of a first signal received via the first antenna and a frequency band of a second signal received via the second antenna are the second band, a pre-processed signal by combining the first signal and the second signal based on a ratio of a weight factor, and to transmit the pre-processed signal to a first radio frequency (RF) receiver.

公开(公告)号：US10325992B2

公开(公告)日：2019-06-18

申请号：US14854272

申请日：2015-09-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eunae Cho ,  Dongjin Lee ,  Ji Eun Lee ,  Kyoung-Ho Jung ,  Dong Su Ko ,  Yongsu Kim ,  Jiho Yoo ,  Sung Heo ,  Hyun Park ,  Satoru Yamada ,  Moonyoung Jeong ,  Sungjin Kim ,  Gyeongsu Park ,  Han Jin Lim

IPC: H01L29/423 ,  H01L29/49 ,  H01L21/28 ,  H01L29/51

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.

公开(公告)号：US10009417B2

公开(公告)日：2018-06-26

申请号：US14851756

申请日：2015-09-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungjin Kim ,  Jinhan Kim ,  Sang-Moon Lee

IPC: H04W72/08 ,  H04W72/12 ,  H04L29/08 ,  H04W40/12 ,  H04W4/00

CPC classification number: H04L67/10 ,  H04W4/60 ,  H04W40/12

Abstract: A method for wireless grid computing includes: receiving feedback of a computing resource state (“CRS”) and channel quality information (“CQI”) from at least one candidate terminal; determining at least one parallel work execution terminal to execute the wireless grid computing among at least one terminal based on the feedback of the CRS and the feedback of the CQI; and assigning parallel processing work of the wireless grid computing to the at least one parallel work execution terminal. Such wireless grid computing method may be performed using a base station or a terminal.

公开(公告)号：US12210045B2

公开(公告)日：2025-01-28

申请号：US17591751

申请日：2022-02-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byeongsang Kim ,  Dougyong Sung ,  Sungjin Kim ,  Yunhwan Kim ,  Inseok Seo ,  Seungbo Shim ,  Naohiko Okunishi ,  Minyoung Hur

IPC: G01R27/16 ,  C23C16/455 ,  C23C16/52 ,  H01L21/66 ,  H01L21/67 ,  H01L21/683

Abstract: An impedance measurement jig may include a first contact plate, a second contact plate, a cover plate, a plug, and an analyzer. The first contact plate may make electrical contact with an ESC in a substrate-processing apparatus. The second contact plate may make electrical contact with a focus ring configured to surround the ESC. The cover plate may be configured to cover an upper surface of the substrate-processing apparatus. The plug may be installed at the cover plate to selectively make contact with the first contact plate or the second contact plate. The analyzer may individually apply a power to the first contact plate and the second contact plate through the plug to measure an impedance of the ESC and an impedance of the focus ring. Thus, the impedances of the ESC and the focus ring may be individually measured to inspect the ESC and/or the focus ring.

公开(公告)号：US12205571B2

公开(公告)日：2025-01-21

申请号：US17970464

申请日：2022-10-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungjin Kim ,  Sohee Kim ,  Haekeu Park ,  Juhee Chang ,  Hyeonyeong Jeong

IPC: G10K11/178 ,  H04R3/00

Abstract: An electronic device may include at least one microphone, a speaker, and a processor operatively connected to the at least one microphone and the speaker, wherein the processor may be configured to configure an operation frequency of the microphone as a first frequency and receive an external audio signal from the outside of the electronic device through the microphone operating in the first frequency, generate a first audio signal using the received external audio signal, acquire noise signal information, based on the first audio signal, output a second audio signal generated based on the noise signal information through the speaker, determine a second frequency, based on the generated second audio signal, and change the operation frequency of the microphone to the second frequency and receive the external audio signal from the outside of the electronic device through the microphone operating at the second frequency.

公开(公告)号：US12136842B2

公开(公告)日：2024-11-05

申请号：US17159373

申请日：2021-01-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hasik Moon ,  Seungho Lee ,  Kyungik Jang ,  Doosuk Kang ,  Sungjin Kim ,  Sangkyung Park ,  Byoungchul Lee ,  Hongsup Lee ,  Jungho Cho ,  Bokun Choi ,  Chijeong Choi ,  Donghoon Hyun

IPC: G01R19/165 ,  H01M10/42 ,  H01M10/44 ,  H02J7/00 ,  H04R1/10

Abstract: An embodiment of the disclosure provides a first power receiving device including a battery, a power management integrated circuit, an interface for receiving power from a power supply device, and a processor configured to control a charging current using the power management integrated circuit. The processor may be configured to: if charging from the power supply device through the interface is detected, set the charging current, transmit first charging information associated with the first power receiving device to the power supply device, through the interface, receive second charging information associated with a second power receiving device which is paired with the first power receiving device or associated with the power supply device from the power supply device, through the interface, and control the charging current by comparing the first charging information and the second charging information.

公开(公告)号：US12105132B2

公开(公告)日：2024-10-01

申请号：US17975202

申请日：2022-10-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinyeong Yun ,  Meehyun Lim ,  Sungjin Kim ,  Masahiko Yamabe ,  Sungyeol Kim ,  Sungyong Lim ,  Sunghwi Cho

IPC: G01R29/12 ,  H01L21/66 ,  H01L21/683 ,  H01L21/687

CPC classification number: G01R29/12 ,  H01L21/6833 ,  H01L21/68742 ,  H01L22/12

Abstract: An electric field measuring apparatus includes an electrostatic chuck with a through hole and holding a wafer, a lift pin picking up the wafer, a driver vertically moving the lift pin along the through hole, a probe in the lift pin and having a refractive index changed by an electric field of the wafer, the probe including an electro-optical crystal, an optical waveguide forming at least one internal path of light having a polarization characteristic changed by the changed refractive index between the probe and the wafer, and a control module controlling the lift pin and the driver. The lift pin moves to first and second positions. The control module calculates a strength of the electric field of the wafer, using electric field data measured using the probe at each of the first and second positions.

公开(公告)号：US11792993B2

公开(公告)日：2023-10-17

申请号：US17859631

申请日：2022-07-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sunggil Kim ,  Sungjin Kim ,  Seulye Kim ,  Junghwan Kim ,  Chanhyoung Kim

IPC: H10B43/27 ,  H01L29/10

CPC classification number: H10B43/27 ,  H01L29/105 ,  H01L29/1037

Abstract: A three-dimensional semiconductor device including a conductive layer disposed on a substrate and including a first conductivity-type impurity; an insulating base layer disposed on the conductive layer; a stack structure including a lower insulating film disposed on the insulating base layer, and a plurality of gate electrodes and a plurality of mold insulating layers alternately stacked on the lower insulating film, wherein the insulating base layer includes a high dielectric material; a vertical structure including a vertical channel layer penetrating through the stack structure and a vertical insulating layer disposed between the vertical channel layer and the plurality of gate electrodes, the vertical structure having an extended area extending in a width direction in the insulating base layer; and an isolation structure penetrating through the stack structure, the insulating base layer and the conductive layer, and extending in a direction parallel to an upper surface of the substrate, wherein the conductive layer has an extension portion extending along a surface of the vertical channel layer in the extended area of the vertical structure.