公开(公告)号：US11923216B2

公开(公告)日：2024-03-05

申请号：US17892677

申请日：2022-08-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Min Shin ,  Sang Jin Park ,  Hae Won Choi ,  Jang Jin Lee ,  Ji Hwan Park ,  Kun Tack Lee ,  Koriakin Anton ,  Joon Ho Won ,  Jin Yeong Sung ,  Pil Kyun Heo

IPC: H01L21/67 ,  G03F7/16 ,  H01L21/677

CPC classification number: H01L21/67196 ,  G03F7/168 ,  H01L21/67017 ,  H01L21/67173 ,  H01L21/67178 ,  H01L21/6719 ,  H01L21/67225 ,  H01L21/67748

Abstract: An apparatus and method for treating a substrate are provided. The apparatus includes at least one first process chamber configured to supply a developer onto the substrate; at least one second process chamber configured to treat the substrate using a supercritical fluid; a transfer chamber configured to transfer the substrate from the at least one first process chamber to the at least one second process chamber, while the developer supplied in the at least one first process chamber remains on the substrate; and a temperature and humidity control system configured to manage temperature and humidity of the transfer chamber by supplying a first gas of constant temperature and humidity into the transfer chamber.

公开(公告)号：US11721565B2

公开(公告)日：2023-08-08

申请号：US16690498

申请日：2019-11-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong Jun Choi ,  Seok Hoon Kim ,  Young-Hoo Kim ,  In Gi Kim ,  Sung Hyun Park ,  Seung Min Shin ,  Kun Tack Lee ,  Jinwoo Lee ,  Hun Jae Jang ,  Ji Hoon Cha

IPC: H01L21/67 ,  H01L21/687 ,  B08B3/08

CPC classification number: H01L21/67167 ,  B08B3/08 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67063 ,  H01L21/68707

Abstract: A multi-chamber apparatus for processing a wafer, the apparatus including a high etch rate chamber to receive the wafer and to etch silicon nitride with a phosphoric acid solution; a rinse chamber to receive the wafer and to clean the wafer with an ammonia mixed solution; and a supercritical drying chamber to dry the wafer with a supercritical fluid.

公开(公告)号：US12042828B2

公开(公告)日：2024-07-23

申请号：US18299279

申请日：2023-04-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Min Shin ,  Hun Jae Jang ,  Seok Hoon Kim ,  Young-Hoo Kim ,  In Gi Kim ,  Tae-Hong Kim ,  Kun Tack Lee ,  Ji Hoon Cha ,  Yong Jun Choi

IPC: B08B7/00 ,  B08B3/10 ,  H01L21/311 ,  H01L21/67 ,  H01L21/687

CPC classification number: B08B7/0042 ,  B08B3/10 ,  B08B7/0064 ,  H01L21/31111 ,  H01L21/67051 ,  H01L21/67075 ,  H01L21/67098 ,  H01L21/67248 ,  H01L21/68764

Abstract: A wafer cleaning apparatus is provided. The wafer cleaning apparatus includes comprising a chamber configured to be loaded with a wafer, a nozzle on the wafer and configured to provide liquid chemicals on an upper surface of the wafer, a housing under the wafer, a laser module configured to irradiate laser on the wafer, a transparent window disposed between the wafer and the laser module, and a controller configured to control on/off of the laser module, wherein the controller is configured to control repetition of turning the laser module on and off, and retain temperature of the wafer within a temperature range, and a ratio of time when the laser module is on in one cycle including on/off of the laser module is 30% to 50%.

公开(公告)号：US11862457B2

公开(公告)日：2024-01-02

申请号：US18098330

申请日：2023-01-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： SeongKeun Cho ,  Young Hoo Kim ,  Seung Min Shin ,  Tae Min Earmme ,  Kun Tack Lee ,  Hun Jae Jang ,  Eun Hee Jeang

IPC: H01L21/02 ,  B08B3/08 ,  H01L21/428 ,  H01L21/687

CPC classification number: H01L21/02057 ,  B08B3/08 ,  H01L21/428 ,  H01L21/68764

Abstract: A wafer cleaning apparatus, a method of cleaning wafer and a method of fabricating a semiconductor device are provided. The method of fabricating the semiconductor device includes disposing a wafer on a rotatable chuck, irradiating a lower surface of the wafer with a laser to heat the wafer, and supplying a chemical to an upper surface of the wafer to clean the wafer, wherein the laser penetrates an optical system including an aspheric lens array, the laser penetrates a calibration window, which includes a first window structure including a first light projection window including first and second regions different from each other, a first coating layer covering the first region of the first light projection window, and a second coating layer covering the second region of the first light projection window, and the first coating layer and the second coating layer have different light transmissivities from each other.

公开(公告)号：US09081395B2

公开(公告)日：2015-07-14

申请号：US13755270

申请日：2013-01-31

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  SUNGKYUNKWAN UNIVERSITY Research & Business Foundation

Inventor： Hyun Cheol Jin ,  Sun Jin Kim ,  Han Sol Seo ,  Seung Min Shin ,  Byoung Kuk Lee ,  Joon Young Jeon

IPC: G05F1/595 ,  G05F5/00 ,  H02H11/00

CPC classification number: G05F5/00 ,  H02H11/002

Abstract: A direct current (DC) power supply apparatus includes an input unit configured to receive an outside DC power; a plurality of polarity correction units configured to correct the polarity of the outside DC power; a plurality of switch units installed to correspond to each of the plurality of polarity correction units; a detection unit configured to detect a flow of current of the plurality of polarity correction unit; and a control unit configured to determine a polarity correction unit, at which current of DC power flows, among the plurality of correction units based on a detection signal of transmitted from the detection unit, and control the switch unit corresponding to the determined polarity correction unit at an ON position such that the current of DC power flows through the switch unit which is controlled at the ON position.

Abstract translation: 直流（DC）电源装置包括被配置为接收外部DC电力的输入单元; 多个极性校正单元，被配置为校正外部直流电力的极性; 安装成与所述多个极性校正单元中的每一个相对应的多个开关单元; 检测单元，被配置为检测所述多个极性校正单元的电流; 以及控制单元，被配置为基于从所述检测单元发送的检测信号来确定所述多个校正单元中的DC电力流的极性校正单元，并且控制与所确定的极性校正单元相对应的开关单元 在ON位置，直流电流的电流流过控制在ON位置的开关单元。

公开(公告)号：US20130200874A1

公开(公告)日：2013-08-08

申请号：US13755270

申请日：2013-01-31

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  SUNGKYUNKWAN UNIVERSITY Research & Business Foundation

Inventor： Hyun Cheol JIN ,  Sun Jin Kim ,  Han Sol Seo ,  Seung Min Shin ,  Byoung Kuk Lee ,  Joon Young Jeon

IPC: G05F5/00

CPC classification number: G05F5/00 ,  H02H11/002

Abstract: A direct current (DC) power supply apparatus includes an input unit configured to receive an outside DC power; a plurality of polarity correction units configured to correct the polarity of the outside DC power; a plurality of switch units installed to correspond to each of the plurality of polarity correction units; a detection unit configured to detect a flow of current of the plurality of polarity correction unit; and a control unit configured to determine a polarity correction unit, at which current of DC power flows, among the plurality of correction units based on a detection signal of transmitted from the detection unit, and control the switch unit corresponding to the determined polarity correction unit at an ON position such that the current of DC power flows through the switch unit which is controlled at the ON position.

Abstract translation: 直流（DC）电源装置包括被配置为接收外部DC电力的输入单元; 多个极性校正单元，被配置为校正外部直流电力的极性; 安装成与所述多个极性校正单元中的每一个相对应的多个开关单元; 检测单元，被配置为检测所述多个极性校正单元的电流; 以及控制单元，被配置为基于从所述检测单元发送的检测信号来确定所述多个校正单元中的DC电力流的极性校正单元，并且控制与所确定的极性校正单元相对应的开关单元 在ON位置，直流电流的电流流过控制在ON位置的开关单元。