公开(公告)号：US11676963B2

公开(公告)日：2023-06-13

申请号：US17584877

申请日：2022-01-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungryul Lee ,  Yongseung Kim ,  Jungtaek Kim ,  Pankwi Park ,  Dongchan Suh ,  Moonseung Yang ,  Seojin Jeong ,  Minhee Choi ,  Ryong Ha

IPC: H01L27/088 ,  H01L29/423 ,  H01L29/78 ,  H01L21/8234 ,  H01L29/06

CPC classification number: H01L27/0886 ,  H01L21/823431 ,  H01L21/823468 ,  H01L29/0673 ,  H01L29/4238 ,  H01L29/785

Abstract: An integrated circuit device includes a fin-type active region protruding from a substrate and extending in a first direction, a plurality of semiconductor patterns disposed apart from an upper surface of the fin-type active region, the plurality of semiconductor patterns each including a channel region; a gate electrode surrounding the plurality of semiconductor patterns, extending in a second direction perpendicular to the first direction, and including a main gate electrode, which is disposed on an uppermost semiconductor pattern of the plurality of semiconductor patterns and extends in the second direction, and a sub-gate electrode disposed between the plurality of semiconductor patterns; a spacer structure disposed on both sidewalls of the main gate electrode; and a source/drain region connected to the plurality of semiconductor patterns, disposed at both sides of the gate electrode, and contacting a bottom surface of the spacer structure.