公开(公告)号：US09275993B2

公开(公告)日：2016-03-01

申请号：US13960977

申请日：2013-08-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Weon-Hong Kim ,  Moon-Kyun Song ,  Seok-Jun Won

IPC: H01L27/088 ,  H01L21/28 ,  H01L27/092 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78 ,  H01L21/8238

CPC classification number: H01L27/088 ,  H01L21/28008 ,  H01L21/823807 ,  H01L21/823857 ,  H01L27/092 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/78

Abstract: A semiconductor device includes a first interface film on a first area of a substrate, the first interface film including a first growth interface film and a second growth interface film on a lower portion of the first growth interface film, a first dielectric film on the first interface film, and a first gate electrode on the first dielectric film.

Abstract translation: 半导体器件包括在衬底的第一区域上的第一界面膜，第一界面膜在第一生长界面膜的下部包括第一生长界面膜和第二生长界面膜，第一介电膜在第一 界面膜和第一电介质膜上的第一栅电极。

公开(公告)号：US20140141599A1

公开(公告)日：2014-05-22

申请号：US14165857

申请日：2014-01-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-Ho Do ,  Ha-Jin Lim ,  Weon-Hong Kim ,  Hoi-Sung Chung ,  Moon-Kyun Song ,  Dae-Kwon Joo

IPC: H01L21/02

CPC classification number: H01L21/02236 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02238 ,  H01L21/02271 ,  H01L21/02532 ,  H01L21/28194 ,  H01L21/28211 ,  H01L29/51 ,  H01L29/513

Abstract: A method of fabricating a semiconductor device includes: forming an epitaxial layer on a semiconductor substrate; forming a capping layer having a first thickness on the epitaxial layer; and oxidizing the capping layer in an oxygen atmosphere to form a first gate dielectric layer having a second thickness.

Abstract translation: 制造半导体器件的方法包括：在半导体衬底上形成外延层; 在所述外延层上形成具有第一厚度的覆盖层; 以及在氧气氛中氧化所述覆盖层以形成具有第二厚度的第一栅极介电层。