公开(公告)号：US11380286B2

公开(公告)日：2022-07-05

申请号：US17155132

申请日：2021-01-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gwanghui Lee ,  Minwoo Kim ,  Seungjin Kim ,  Minwoo Lee ,  Juseok Lee ,  Woojun Jung

IPC: G09G5/36 ,  G09G5/18 ,  G09G5/12

Abstract: According to an embodiment, an electronic device may include at least one processor, a display, a memory configured to store image frames, and a display controller configured to output the image frames. The at least one processor may be configured to transmit a first image frame to be output through the display, based on a first timing signal received from the display controller, identify a state of the electronic device, transmit first control information for changing a timing of the first timing signal, in response to transmitting the first control information for changing the timing of the first timing signal, receive a second timing signal from the display controller, and transmit, to the memory, a second image frame to be output through the display, based on the received second timing signal. The timing of the second timing signal may differ from the timing of the first timing signal.

公开(公告)号：US09963346B2

公开(公告)日：2018-05-08

申请号：US15017753

申请日：2016-02-08

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY

Inventor： Hwansoo Suh ,  Youngjae Song ,  Qinke Wu ,  Sungjoo Lee ,  Minwoo Kim ,  Sangwoo Park

IPC: C23C16/34 ,  C01B21/064 ,  C23C16/02

CPC classification number: C01B21/064 ,  C23C16/02 ,  C23C16/0209 ,  C23C16/0254 ,  C23C16/342

Abstract: A seamless hexagonal h-BN atomic monolayer thin film has a pseudo-single crystal structure including a plurality of h-BN grains that are seamlessly merged. Each of the h-BN grains has a dimension in a range from about 10 μm to about 1,000 μm. The seamless hexagonal boron nitride (h-BN) atomic monolayer thin film may be fabricated by a process including pre-annealing a metal thin film at a first temperature in a chamber while supplying hydrogen gas to the chamber; supplying nitrogen source gas and boron source gas to the chamber; and forming the seamless h-BN atomic monolayer thin film having a pseudo-single crystal atomic monolayer structure having a grain dimension in a range from about 10 μm to about 1,000 μm by annealing the pre-annealed metal thin film at a second temperature.

公开(公告)号：US20150169038A1

公开(公告)日：2015-06-18

申请号：US14569371

申请日：2014-12-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minwoo Kim

IPC: G06F1/32 ,  G06F3/041 ,  G09G3/36

CPC classification number: G06F1/3265 ,  G06F1/3237 ,  G06F1/3287 ,  G06F3/0416 ,  G09G3/20 ,  G09G3/36 ,  G09G5/003 ,  G09G2310/061 ,  G09G2330/021 ,  G09G2330/022 ,  G09G2360/08 ,  Y02D10/128 ,  Y02D10/153 ,  Y02D10/171

Abstract: A screen display control method includes a screen change operation, which includes, in response to a screen change request, outputting data of a screen to be changed, to a display unit and predicting a next screen change cycle, and an operation of switching into a power saving mode when there is no screen change request. An electronic device includes an event generation unit configured to generate a screen change event, a display unit configured to receive screen change data and change a displayed screen, and a controller configured to in response to a detected screen change event, output data of a screen to be changed, to the display unit, predict a next screen change cycle, and switch into a power saving mode when there is no screen change request.

Abstract translation: 屏幕显示控制方法包括屏幕改变操作，其包括响应于屏幕改变请求将要更改的屏幕的数据输出到显示单元并预测下一个屏幕改变周期，以及切换到 无屏幕更改请求时省电模式。 电子设备包括：被配置为生成屏幕改变事件的事件生成单元，被配置为接收屏幕改变数据并改变显示屏幕的显示单元;以及控制器，被配置为响应于检测到的屏幕改变事件，屏幕的输出数据 要更改为显示单元，预测下一个屏幕更改周期，并且在没有屏幕更改请求时切换到省电模式。