公开(公告)号：US20240046986A1

公开(公告)日：2024-02-08

申请号：US18157408

申请日：2023-01-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minwoo CHOI ,  Young Jae Kang ,  Bonwon Koo ,  Yongyoung Park ,  Hajun Sung ,  Dongho Ahn ,  Kiyeon Yang ,  Wooyoung Yang ,  Changseung Lee

IPC: G11C13/00 ,  H10B63/10

CPC classification number: G11C13/0069 ,  G11C13/0004 ,  H10B63/10 ,  G11C2213/30 ,  H10B63/84

Abstract: A memory device includes a memory cell including a selection layer and a phase change material layer, and a controller, wherein the selection layer includes a switching material, the phase change material layer includes a phase change material, and the controller is configured to apply a write pulse to the selection layer and the phase change material layer and control a polarity, a peak value, and a shape of the write pulse.