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公开(公告)号：US10571332B2
公开(公告)日：2020-02-25
申请号：US15916914
申请日：2018-03-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kyungsang Cho , Chanwook Baik
Abstract: A light filter includes a plurality of spectrum modulation portions, each having a different thicknesses or a different mixing ratio of materials thereof. Each of the plurality of spectrum modulation portions has a different transmittance spectrum.
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公开(公告)号：US10121565B2
公开(公告)日：2018-11-06
申请号：US14556344
申请日：2014-12-01
Inventor： Kyungsang Cho , Sangwook Kim , Donghyeok Choi
Abstract: A nanoparticle multilayer thin film is provided in which nanoparticles which are not electrically insulated from each other are spaced apart from one another at a reduced distance. The nanoparticle multilayer film includes: at least one first nanoparticle layer including first nanoparticles that are surface-modified with a cationic metal-chalcogenide compound; and at least one second nanoparticle layer including second nanoparticles that are surface-modified with an anionic metal-chalcogenide compound, wherein the first nanoparticle layer and the second nanoparticle layer are alternately stacked upon one another.
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公开(公告)号：US09764320B2
公开(公告)日：2017-09-19
申请号：US14802696
申请日：2015-07-17
Inventor： Kyungsang Cho , Sangwook Kim , Donghyeok Choi
CPC classification number: B01J41/02 , B01J41/10 , H01L21/02601
Abstract: An anion exchange method using an anion exchange precursor based on a metal-chalcogenide compound is provided. The anion exchange method includes exchanging an anionic element of a nanoparticle with an element X of an anion exchange precursor represented by Na2Xn via a reaction between the anion exchange precursor and the nanoparticle in the presence of a reaction medium, wherein X is at least one element selected from the group consisting of Se, S, and Te, and n is an integer from 2 to 10.
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公开(公告)号：US20220262968A1
公开(公告)日：2022-08-18
申请号：US17459686
申请日：2021-08-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Chanwook Baik , Kyungsang Cho , Hojung Kim , Yooseong Yang
IPC: H01L31/0384 , H01L31/112 , H01L31/113 , H01L27/146 , H01L31/0216
Abstract: An opto-electronic device includes a base portion, a first electrode and a second electrode formed on an upper surface of the base portion apart from each other, a quantum dot layer, and a bank structure. The quantum dot layer is between the first electrode and the second electrode on the base portion and includes a plurality of quantum dots. The bank structure covers at least partial regions of the first electrode and the second electrode, defines a region where the quantum dot layer is formed, and is formed of an inorganic material.
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公开(公告)号：US11302740B2
公开(公告)日：2022-04-12
申请号：US16930574
申请日：2020-07-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kyungsang Cho , Chanwook Baik , Hojung Kim
IPC: H01L31/0352 , H01L31/0384 , H01L31/112 , H01L27/146
Abstract: Provided is an opto-electronic device having low dark noise and a high signal-to-noise ratio. The opto-electronic device may include: a first semiconductor layer doped to have a first conductivity type; a second semiconductor layer disposed on an upper surface of the first semiconductor layer and doped to have a second conductivity type electrically opposite to the first conductivity type; a transparent matrix layer disposed on an upper surface of the second semiconductor layer; a plurality of quantum dots arranged to be in contact with the transparent matrix layer; and a first electrode provided on a first side of the transparent matrix layer and a second electrode provided on a second side of the transparent matrix layer opposite to the first side, wherein the first electrode and the second electrode are electrically connected to the second semiconductor layer.
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Patent Agency Ranking
公开(公告)号：US10529879B2
公开(公告)日：2020-01-07
申请号：US15990174
申请日：2018-05-25
Applicant: SAMSUNG ELECTRONICS CO., LTD. , CHEONGJU University Industry & Academy Cooperation Foundation
Inventor： Kyungsang Cho , Sangyeol Lee , Chanwook Baik
IPC: H01L31/0352 , H01L31/0224 , H01L31/0336 , H01L31/09 , H01L31/112 , H01L31/113
Abstract: A photoelectric conversion device may include a substrate, a photoactive layer disposed on the substrate, and a first electrode and a second electrode respectively connected to corresponding edges of the photoactive layer. The photoactive layer may include a first oxide semiconductor layer on the substrate, and a plurality of quantum dot layers and a plurality of second oxide semiconductor layers that are alternately formed on the first oxide semiconductor layer.
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公开(公告)号：US09925568B2
公开(公告)日：2018-03-27
申请号：US15293448
申请日：2016-10-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Seung Yeon Lee , Jun Ho Lee , Kyungsang Cho , Young Suk Jung
IPC: H01L33/06 , B08B3/08 , B05D1/02 , C01B19/00 , B22F1/00 , B08B3/10 , C09K11/02 , C09K11/56 , C09K11/88 , B82Y20/00
CPC classification number: B08B3/08 , B05D1/02 , B08B3/10 , B22F1/0018 , B22F1/0085 , B22F1/0088 , B82Y20/00 , C01B19/002 , C01B19/007 , C01P2002/82 , C01P2002/89 , C01P2004/04 , C01P2004/64 , C01P2006/40 , C09K11/025 , C09K11/565 , C09K11/883 , H01L33/06 , Y10S977/774 , Y10S977/95 , Y10T428/256
Abstract: A method for removing an organic ligand from a surface of a particle including: obtaining a particle having an organic ligand disposed on a surface thereof; contacting the particle with an alkylammonium salt represented by Chemical Formula 1: NR′4+A− Chemical Formula 1 wherein groups R′ are the same or different and are each independently hydrogen or a C1 to C20 alkyl group, provided that at least one group R′ is an alkyl group, and A is a hydroxide anion, a halide anion, a borohydride anion, a nitrate anion, a phosphate anion, or a sulfate anion; and heat-treating the particle to carry out a reaction between the alkylammonium salt and the organic ligand.
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公开(公告)号：US09902900B2
公开(公告)日：2018-02-27
申请号：US14538556
申请日：2014-11-11
Applicant: SAMSUNG ELECTRONICS CO., LTD. , INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY
Inventor： Kyungsang Cho , Dongho Kim , Heejae Chung
CPC classification number: C09K11/02 , B82Y30/00 , B82Y40/00 , C09K11/565 , C09K11/883 , Y10S977/774 , Y10S977/897 , Y10S977/932
Abstract: Provided is a nanoparticle polymer in which a plurality of core particles that are linked to each other by a linker are surrounded by a metal-chalcogenide compound shell. The nanoparticle polymer may include a nanoparticle polymer including a core assembly including at least two nanoparticles connected to each other by a linker; and a shell that surrounds a surface of the core assembly and includes a metal-chalcogenide compound.
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公开(公告)号：US20250160008A1
公开(公告)日：2025-05-15
申请号：US18818187
申请日：2024-08-28
Applicant: Samsung Electronics Co., Ltd.
Inventor： Youngzoon YOON , Chanwook Baik , Kyungsang Cho
IPC: H01L27/146 , G01J1/44 , G01J5/10
Abstract: A germanium-based short wavelength infrared sensor, a method of manufacturing the same, and an electronic apparatus including the germanium-based short wavelength infrared sensor are provided. The short wavelength infrared sensor according to an example embodiment includes a light absorption layer provided on the substrate layer and having a higher absorption rate for a short wavelength infrared light than an absorption rate for a visible light; a light absorption enhancement layer provided on the light absorption layer to enhance a light absorption rate of the light absorption layer, the light absorption enhancement layer including a plurality of nanostructures; and an upper insulating layer covering the plurality of nanostructures and having a refractive index greater than a refractive index of each of the plurality of nanostructures, wherein the light absorption layer includes germanium (Ge).
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公开(公告)号：US12166052B2
公开(公告)日：2024-12-10
申请号：US17580145
申请日：2022-01-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kyungsang Cho , Hojung Kim , Chanwook Baik , Yooseong Yang
IPC: H01L27/146 , B82Y20/00
Abstract: Provided is an image sensor including a sensor array including a plurality of light-sensors respectively including an optoelectronic device, the optoelectronic device including a first electrode, a second electrode spaced apart from the first electrode, and an active layer provided between the first electrode and the second electrode, the active layer including a plurality of quantum dot layers having different energy bands, and a circuit including circuits respectively connected to the plurality of light-sensors and configured to readout an optoelectronic signal generated from each of the plurality of light-sensors.
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