公开(公告)号：US11114541B2

公开(公告)日：2021-09-07

申请号：US17035675

申请日：2020-09-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunmin Moon ,  Young-Lim Park ,  Kyuho Cho ,  Hanjin Lim

IPC: H01L29/51 ,  H01L21/762 ,  H01L29/15 ,  H01L29/06 ,  H01L27/108 ,  H01L49/02

Abstract: Disclosed is a semiconductor device including a bottom electrode, a dielectric layer, and a top electrode that are sequentially disposed on a substrate. The dielectric layer includes a hafnium oxide layer including hafnium oxide having a tetragonal crystal structure, and an oxidation seed layer including an oxidation seed material. The oxidation seed material has a lattice constant having a lattice mismatch of 6% or less with one of a horizontal lattice constant and a vertical lattice constant of the hafnium oxide having the tetragonal crystal structure.

公开(公告)号：US10453913B2

公开(公告)日：2019-10-22

申请号：US15938234

申请日：2018-03-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyuho Cho ,  Sangyeol Kang ,  Suhwan Kim ,  Sunmin Moon ,  Young-Lim Park ,  Jong-Bom Seo ,  Joohyun Jeon

IPC: H01L49/02 ,  H01L21/02

Abstract: A capacitor includes a first electrode and a second electrode spaced apart from each other, a dielectric layer disposed between the first electrode and the second electrode, and a seed layer disposed between the first electrode and the dielectric layer. The dielectric layer includes a dielectric material having a tetragonal crystal structure. The seed layer includes a seed material that satisfies at least one of a lattice constant condition or a bond length condition.