公开(公告)号：US11948956B2

公开(公告)日：2024-04-02

申请号：US16998202

申请日：2020-08-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyungi Hong ,  Kook Tae Kim ,  Jingyun Kim ,  Soojin Hong

IPC: H01L27/146 ,  H01L21/265 ,  H01L21/266

CPC classification number: H01L27/1463 ,  H01L27/14685 ,  H01L21/26513 ,  H01L21/266 ,  H01L27/14614 ,  H01L27/1464 ,  H01L27/14641

Abstract: Image sensors are provided. An image sensor includes a substrate including a plurality of pixel areas. The substrate has a first surface and a second surface that is opposite the first surface. The image sensor includes a deep pixel isolation region extending from the second surface of the substrate toward the first surface of the substrate and separating the plurality of pixel areas from each other. The image sensor includes an amorphous region adjacent a sidewall of the deep pixel isolation region. Moreover, the image sensor includes an electron suppression region between the amorphous region and the sidewall of the deep pixel isolation region.

公开(公告)号：US11843016B2

公开(公告)日：2023-12-12

申请号：US17402665

申请日：2021-08-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jingyun Kim

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14616 ,  H01L27/14643

Abstract: An image sensor includes a semiconductor substrate of first conductivity type having first and second surfaces and including pixel regions, photoelectric conversion regions of second conductivity type respectively provided in the pixel regions, and a pixel isolation structure disposed in the semiconductor substrate to define the pixel regions and surrounding each of the photoelectric conversion regions. The pixel isolation structure includes a semiconductor pattern extending from the first surface to the second surface of the semiconductor substrate, a sidewall insulating pattern between a sidewall of the semiconductor pattern and the semiconductor substrate, and a dopant region in at least a portion of the semiconductor pattern.

公开(公告)号：US20230170373A1

公开(公告)日：2023-06-01

申请号：US17980192

申请日：2022-11-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jonghyeon Noh ,  Kook Tae Kim ,  Jingyun Kim ,  Miseon Park ,  Jaewoong Lee

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14621 ,  H01L27/14629

Abstract: An image sensor includes: a substrate including a first surface and a second surface; an interlayer dielectric layer covering the first surface; and a pixel separation part disposed its the substrate, wherein the pixel separation part divides a plurality of unit pixels from each other, wherein the pixel separation part includes: a conductive structure that extends from the first surface toward the second surface; a first reflective structure disposed between the conductive structure and the substrate; and a front-side buried pattern disposed between the conductive structure and the interlayer dielectric layer and between the first reflective structure and the interlayer dielectric layer, wherein the first reflective structure includes first reflective liners and second reflective liners that are alternately disposed in a direction toward the conductive structure from the substrate, wherein a refractive index of the first reflective liners is different from a refractive index of the second reflective liners.

公开(公告)号：US10784301B2

公开(公告)日：2020-09-22

申请号：US16400279

申请日：2019-05-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyungi Hong ,  Kook Tae Kim ,  Jingyun Kim ,  Soojin Hong

IPC: H01L27/14 ,  H01L27/11 ,  H01L29/06 ,  H01L27/146 ,  H01L21/266 ,  H01L21/265 ,  H01L27/11517

Abstract: Image sensors are provided. An image sensor includes a substrate including a plurality of pixel areas. The substrate has a first surface and a second surface that is opposite the first surface. The image sensor includes a deep pixel isolation region extending from the second surface of the substrate toward the first surface of the substrate and separating the plurality of pixel areas from each other. The image sensor includes an amorphous region adjacent a sidewall of the deep pixel isolation region. Moreover, the image sensor includes an electron suppression region between the amorphous region and the sidewall of the deep pixel isolation region.

公开(公告)号：US20200227449A1

公开(公告)日：2020-07-16

申请号：US16535762

申请日：2019-08-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kook Tae Kim ,  Jingyun Kim ,  Kyunghee Kim ,  Jaewoong Lee ,  Soojin Hong

IPC: H01L27/146

Abstract: An image includes a semiconductor substrate having a first surface and a second surface that face each other; a first photoelectric conversion region and a second photoelectric conversion region provided in the semiconductor substrate; a gapfill pattern that is interposed between the first and second photoelectric conversion regions and extends from the second surface toward the first surface, wherein a first side surface of the gapfill pattern faces the first photoelectric conversion region and a second side surface of the gapfill pattern faces the second photoelectric conversion region; and a conductive pattern disposed on the gapfill pattern. The conductive pattern includes a first portion disposed on the first side surface, a second portion disposed on the second side surface, and a connecting portion that is disposed on a top surface of the gapfill pattern and electrically connects the first portion to the second portion.