公开(公告)号：USD752002S1

公开(公告)日：2016-03-22

申请号：US29512044

申请日：2014-12-16

Applicant: Samsung Electronics Co., Ltd.

Designer： Jin-Wook Kim ,  Jin-le Ryu ,  Ki-Hyun Yoon ,  Hong-Pyo Kim ,  Chi-Young Ahn

公开(公告)号：US11705497B2

公开(公告)日：2023-07-18

申请号：US17185466

申请日：2021-02-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： In Yeal Lee ,  Yoon Young Jung ,  Jin-Wook Kim ,  Deok Han Bae ,  Myung Yoon Um

IPC: H01L29/423 ,  H01L29/786 ,  H01L29/06 ,  H01L29/51

CPC classification number: H01L29/42392 ,  H01L29/0673 ,  H01L29/512 ,  H01L29/78696

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, an active pattern extending in a first direction on the substrate, a gate electrode extending in a second direction intersecting the first direction on the active pattern, a gate spacer extending in the second direction along side walls of the gate electrode, an interlayer insulating layer contacting side walls of the gate spacer, a trench formed on the gate electrode in the interlayer insulating layer, a first capping pattern provided along side walls of the trench, at least one side wall of the first capping pattern having an inclined profile, and a second capping pattern provided on the first capping pattern in the trench.

公开(公告)号：US20190319127A1

公开(公告)日：2019-10-17

申请号：US16450193

申请日：2019-06-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki Hwan Kim ,  Gigwan Park ,  Junggun You ,  DongSuk Shin ,  Jin-Wook Kim

IPC: H01L29/78 ,  H01L27/11 ,  H01L29/16 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/08 ,  H01L29/161 ,  H01L29/66 ,  H01L23/535

Abstract: A semiconductor device includes first and second active patterns protruding upward from a substrate, a gate electrode crossing the first and second active patterns and extending in a first direction, a first source/drain region on the first active pattern and on at least one side of the gate electrode, and a second source/drain region on the second active pattern and on at least one side of the gate electrode. The first and second source/drain regions have a conductivity type different from each other, and the second source/drain region has a bottom surface in contact with a top surface of the second active pattern and at a lower level than that of a bottom surface of the first source/drain region in contact with a top surface of the first active pattern. The first active pattern has a first width smaller than a second width of the second active pattern.

公开(公告)号：US10411131B2

公开(公告)日：2019-09-10

申请号：US16111854

申请日：2018-08-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki Hwan Kim ,  Gigwan Park ,  Junggun You ,  DongSuk Shin ,  Jin-Wook Kim

IPC: H01L29/78 ,  H01L21/8238 ,  H01L23/535 ,  H01L27/092 ,  H01L27/11 ,  H01L29/06 ,  H01L29/08 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66

Abstract: A semiconductor device includes first and second active patterns protruding upward from a substrate, a gate electrode crossing the first and second active patterns and extending in a first direction, a first source/drain region on the first active pattern and on at least one side of the gate electrode, and a second source/drain region on the second active pattern and on at least one side of the gate electrode. The first and second source/drain regions have a conductivity type different from each other, and the second source/drain region has a bottom surface in contact with a top surface of the second active pattern and at a lower level than that of a bottom surface of the first source/drain region in contact with a top surface of the first active pattern. The first active pattern has a first width smaller than a second width of the second active pattern.

公开(公告)号：US10090413B2

公开(公告)日：2018-10-02

申请号：US15288080

申请日：2016-10-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki Hwan Kim ,  Gigwan Park ,  Junggun You ,  DongSuk Shin ,  Jin-Wook Kim

IPC: H01L29/78 ,  H01L29/16 ,  H01L23/535 ,  H01L27/11 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/08 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66

Abstract: A semiconductor device includes first and second active patterns protruding upward from a substrate, a gate electrode crossing the first and second active patterns and extending in a first direction, a first source/drain region on the first active pattern and on at least one side of the gate electrode, and a second source/drain region on the second active pattern and on at least one side of the gate electrode. The first and second source/drain regions have a conductivity type different from each other, and the second source/drain region has a bottom surface in contact with a top surface of the second active pattern and at a lower level than that of a bottom surface of the first source/drain region in contact with a top surface of the first active pattern. The first active pattern has a first width smaller than a second width of the second active pattern.